Harish Subbaraman

Bio: Harish Subbaraman is an academic researcher from Boise State University. The author has contributed to research in topics: Photonic crystal & Photonics. The author has an hindex of 30, co-authored 162 publications receiving 2854 citations. Previous affiliations of Harish Subbaraman include University of Texas at Austin.

Recent advances in silicon-based passive and active optical interconnects

Abstract: Silicon photonics has experienced phenomenal transformations over the last decade. In this paper, we present some of the notable advances in silicon-based passive and active optical interconnect components, and highlight some of our key contributions. Light is also cast on few other parallel technologies that are working in tandem with silicon-based structures, and providing unique functions not achievable with any single system acting alone. With an increasing utilization of CMOS foundries for silicon photonics fabrication, a viable path for realizing extremely low-cost integrated optoelectronics has been paved. These advances are expected to benefit several application domains in the years to come, including communication networks, sensing, and nonlinear systems.

Spiral Photonic Crystal Fiber-Based Dual-Polarized Surface Plasmon Resonance Biosensor

Abstract: We numerically demonstrate a surface plasmon resonance biosensor-based on dual-polarized spiral photonic crystal fiber (PCF). Chemically stable gold material is used as the active plasmonic material, which is placed on the outer layer of the PCF to facilitate practical fabrication. Finite-element method-based numerical investigations show that the proposed biosensor shows maximum wavelength sensitivity of 4600 and 4300 nm/RIU in ${x}$ - and ${y}$ -polarized modes at an analyte refractive index of 1.37. Moreover, for analyte refractive index ranging from 1.33 to 1.38, maximum amplitude sensitivities of 371.5 RIU−1 and 420.4 RIU−1 are obtained in ${x}$ - and ${y}$ -polarized modes, respectively. In addition, the effects of changing pitch, different air hole diameter of the PCF and thickness of the gold layer on the sensing performance are also investigated. Owing to high sensitivity, improved sensing resolution and appropriate linearity characteristics, the proposed dual-polarized spiral PCF can be implemented for the detection of biological analytes, organic chemicals, biomolecules, and other unknown analytes.

On-chip silicon optical phased array for two-dimensional beam steering.

Abstract: A 16-element optical phased array integrated on chip is presented for achieving two-dimensional (2D) optical beam steering. The device is fabricated on the silicon-on-insulator platform with a 250 nm silicon device layer. Steering is achieved via a combination of wavelength tuning and thermo-optic phase shifting with a switching power of Pπ=20 mW per channel. Using a silicon waveguide grating with a polycrystalline silicon overlay enables narrow far field beam widths while mitigating the precise etching needed for conventional shallow etch gratings. Using this system, 2D steering across a 20°×15° field of view is achieved with a sidelobe level better than 10 dB and with beam widths of 1.2°×0.5°.

All ink-jet-printed carbon nanotube thin-film transistor on a polyimide substrate with an ultrahigh operating frequency of over 5 GHz

Abstract: We report a flexible carbon nanotube (CNT) thin-film transistor (TFT) fabricated solely by ink-jet printing technology. The TFT is top gate configured, consisting of source and drain electrodes, a carrier transport layer based on an ultrapure, high-density (>1000 CNTs/μm2) CNT thin film, an ion-gel gate dielectric layer, and a poly(3,4-ethylenedioxythiophene) top gate electrode. All the TFT elements are ink-jet printed at room temperature on a polyimide substrate without involving any photolithography patterning or surface pretreatment steps. This CNT-TFT exhibits a high operating frequency of over 5 GHz and an on-off ratio of over 100. Such an all-ink-jet-printed process eliminates the need for lithography, vacuum processing, and metallization procedures and thus provides a promising technology for low-cost, high-throughput fabrication of large-area high-speed flexible electronic circuits on virtually any desired flexible substrate.

Complementary metal–oxide–semiconductor compatible high efficiency subwavelength grating couplers for silicon integrated photonics

Abstract: We demonstrate a through-etched grating coupler based on subwavelength nanostructure. The grating consists of arrays of 80 nm × 343 nm rectangular air holes, which can be patterned in a single lithography/etch. A peak coupling efficiency of 59% at 1551.6 nm and a 3 dB bandwidth of 60 nm are achieved utilizing the silicon-on-insulator platform with a 1 μm thick buried-oxide layer for transverse electric mode. The performance is comparable to gratings requiring much more complicated fabrication processes.

I and i

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

A review of fabrication and applications of carbon nanotube film-based flexible electronics

Abstract: Flexible electronics offer a wide-variety of applications such as flexible circuits, flexible displays, flexible solar cells, skin-like pressure sensors, and conformable RFID tags. Carbon nanotubes (CNTs) are a promising material for flexible electronics, both as the channel material in field-effect transistors (FETs) and as transparent electrodes, due to their high intrinsic carrier mobility, conductivity, and mechanical flexibility. In this feature article, we review the recent progress of CNTs in flexible electronics by describing both the processing and the applications of CNT-based flexible devices. To employ CNTs as the channel material in FETs, single-walled carbon nanotubes (SWNTs) are used. There are generally two methods of depositing SWNTs on flexible substrates—transferring CVD-grown SWNTs or solution-depositing SWNTs. Since CVD-grown SWNTs can be highly aligned, they often outperform solution-processed SWNT films that are typically in the form of random network. However, solution-based SWNTs can be printed at a large-scale and at low-cost, rendering them more appropriate for manufacturing. In either case, the removal of metallic SWNTs in an effective and a scalable manner is critical, which must still be developed and optimized. Nevertheless, promising results demonstrating SWNT-based flexible circuits, displays, RF-devices, and biochemical sensors have been reported by various research groups, proving insight into the exciting possibilities of SWNT-based FETs. In using carbon nanotubes as transparent electrodes (TEs), two main strategies have been implemented to fabricate highly conductive, transparent, and mechanically compliant films—superaligned films of CNTs drawn from vertically grown CNT forests using the “dry-drawing” technique and the deposition or embedding of CNTs onto flexible or stretchable substrates. The main challenge for CNT based TEs is to fabricate films that are both highly conductive and transparent. These CNT based TEs have been used in stretchable and flexible pressure, strain, and chemical and biological sensors. In addition, they have also been used as the anode and cathode in flexible light emitting diodes, solar cells, and supercapacitors. In summary, there are a number of challenges yet to overcome to optimize the processing and performance of CNT-based flexible electronics; nonetheless, CNTs remain a highly suitable candidate for various flexible electronic applications in the near future.

Roadmap on silicon photonics

Abstract: Silicon photonics research can be dated back to the 1980s. However, the previous decade has witnessed an explosive growth in the field. Silicon photonics is a disruptive technology that is poised to revolutionize a number of application areas, for example, data centers, high-performance computing and sensing. The key driving force behind silicon photonics is the ability to use CMOS-like fabrication resulting in high-volume production at low cost. This is a key enabling factor for bringing photonics to a range of technology areas where the costs of implementation using traditional photonic elements such as those used for the telecommunications industry would be prohibitive. Silicon does however have a number of shortcomings as a photonic material. In its basic form it is not an ideal material in which to produce light sources, optical modulators or photodetectors for example. A wealth of research effort from both academia and industry in recent years has fueled the demonstration of multiple solutions to these and other problems, and as time progresses new approaches are increasingly being conceived. It is clear that silicon photonics has a bright future. However, with a growing number of approaches available, what will the silicon photonic integrated circuit of the future look like? This roadmap on silicon photonics delves into the different technology and application areas of the field giving an insight into the state-of-the-art as well as current and future challenges faced by researchers worldwide. Contributions authored by experts from both industry and academia provide an overview and outlook for the silicon waveguide platform, optical sources, optical modulators, photodetectors, integration approaches, packaging, applications of silicon photonics and approaches required to satisfy applications at mid-infrared wavelengths. Advances in science and technology required to meet challenges faced by the field in each of these areas are also addressed together with predictions of where the field is destined to reach.

Waveguide sub-wavelength structures: a review of principles and applications

Abstract: Periodic structures with a sub-wavelength pitch have been known since Hertz conducted his first experiments on the polarization of electromagnetic waves. While the use of these structures in waveguide optics was proposed in the 1990s, it has been with the more recent developments of silicon photonics and high-precision lithography techniques that sub-wavelength structures have found widespread application in the field of pho- tonics. This review first provides an introduction to the physics of sub-wavelength structures. An overview of the applications of sub-wavelength structures is then given including: anti-reflective coatings, polarization rotators, high-efficiency fiber-chip cou- plers, spectrometers, high-reflectivity mirrors, athermal waveg- uides, multimode interference couplers, and dispersion engi- neered, ultra-broadband waveguide couplers among others. Particular attention is paid to providing insight into the design strategies for these devices. The concluding remarks provide an outlook on the future development of sub-wavelength structures and their impact in photonics.