Heiji Watanabe

Bio: Heiji Watanabe is an academic researcher from Osaka University. The author has contributed to research in topics: Oxide & High-κ dielectric. The author has an hindex of 32, co-authored 359 publications receiving 4468 citations. Previous affiliations of Heiji Watanabe include NEC & Nara Institute of Science and Technology.

Kinetics of Initial Layer-by-Layer Oxidation of Si(001) Surfaces

Abstract: Layer-by-layer oxidation of Si(001) surfaces has been studied by scanning reflection electron microscopy (SREM). The oxidation kinetics of the top and second layers were independently investigated from the change in oxygen Auger peak intensity calibrated from the SREM observation. A barrierless oxidation of the first subsurface layer, as well as oxygen chemisorption onto the top layer, occurs at room temperature. The energy barrier of the second-layer oxidation was found to be 0.3 eV. The initial oxidation kinetics are discussed based on first-principles calculations.

First-principles studies of the intrinsic effect of nitrogen atoms on reduction in gate leakage current through Hf-based high-k dielectrics

Abstract: The atomistic effects of N atoms on the leakage current through HfO2 high-k gate dielectrics have been studied from first-principles calculations within the framework of a generalized gradient approximation (GGA). It has been found that the intrinsic effects of N atoms drastically reduce the electron leakage current. N atoms couple favorably with oxygen vacancies (VO) in HfO2 and extract electrons from VO. As a result, VO energy levels are drastically elevated due to the charged-state change in VO from neutral (VO0) to positively charged (VO2+). Accordingly, N incorporation removes the electron leakage path mediated by VO related gap states.

Synchrotron x-ray photoelectron spectroscopy study on thermally grown SiO2/4H-SiC(0001) interface and its correlation with electrical properties

Abstract: The correlation between atomic structure and the electrical properties of thermally grown SiO2/4H-SiC(0001) interfaces was investigated by synchrotron x-ray photoelectron spectroscopy together with electrical measurements of SiC-MOS capacitors. We found that the oxide interface was dominated by Si-O bonds and that there existed no distinct C-rich layer beneath the SiC substrate despite literature. In contrast, intermediate oxide states in Si core-level spectra attributable to atomic scale roughness and imperfection just at the oxide interface increased as thermal oxidation progressed. Electrical characterization of corresponding SiC-MOS capacitors also indicated an accumulation of both negative fixed charges and interface defects, which correlates well with the structural change in the oxide interface and provides insight into the electrical degradation of thermally grown SiC-MOS devices.

Modified Oxygen Vacancy Induced Fermi Level Pinning Model Extendable to P-Metal Pinning

Abstract: Typical p-metals show similar effective work functions close to p+ polycrystalline silicon (poly-Si) pinning position irrespective of materials after high-temperature process. We found that this phenomenon can be explained by the modified Vo model taking into account the effect of Si substrate. Oxygen absorption by Si substrate and subsequent electron transfer to metal electrode clearly explain the p-metal Fermi level pinning as well as p+ poly-Si pinning. In addition, unsuppressed Fermi level pinning by insertion of barrier layer at p+ poly-Si/barrier layer/high-k gate stack, which is one of the open issues concerning p+ poly-Si pinning, has the same overall reaction scheme. The modified model also consistently explains this phenomenon.

High dielectric constant gate oxides for metal oxide Si transistors

Abstract: The scaling of complementary metal oxide semiconductor transistors has led to the silicon dioxide layer, used as a gate dielectric, being so thin (14?nm) that its leakage current is too large It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (?) or 'high K' gate oxides such as hafnium oxide and hafnium silicate These oxides had not been extensively studied like SiO2, and they were found to have inferior properties compared with SiO2, such as a tendency to crystallize and a high density of electronic defects Intensive research was needed to develop these oxides as high quality electronic materials This review covers both scientific and technological issues?the choice of oxides, their deposition, their structural and metallurgical behaviour, atomic diffusion, interface structure and reactions, their electronic structure, bonding, band offsets, electronic defects, charge trapping and conduction mechanisms, mobility degradation and flat band voltage shifts The oxygen vacancy is the dominant electron trap It is turning out that the oxides must be implemented in conjunction with metal gate electrodes, the development of which is further behind Issues about work function control in metal gate electrodes are discussed

Semiconductor device, and manufacturing method thereof

Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

High dielectric constant oxides

Abstract: The scaling of complementary metal oxide semiconductor (CMOS) transistors has led to the silicon dioxide layer used as a gate dielectric becoming so thin (1.4 nm) that its leakage current is too large. It is necessary to replace the SiO2 with a physically thicker layer of oxides of higher dielectric constant (κ) or 'high K' gate oxides such as hafnium oxide and hafnium silicate. Little was known about such oxides, and it was soon found that in many respects they have inferior electronic properties to SiO2 ,s uch as a tendency to crystallise and a high concentration of electronic defects. Intensive research is underway to develop these oxides into new high quality electronic materials. This review covers the choice of oxides, their structural and metallurgical behaviour, atomic diffusion, their deposition, interface structure and reactions, their electronic structure, bonding, band offsets, mobility degradation, flat band voltage shifts and electronic defects. The use of high K oxides in capacitors of dynamic random access memories is also covered.

The ReaxFF reactive force-field: development, applications and future directions

Abstract: The reactive force-field (ReaxFF) interatomic potential is a powerful computational tool for exploring, developing and optimizing material properties. Methods based on the principles of quantum mechanics (QM), while offering valuable theoretical guidance at the electronic level, are often too computationally intense for simulations that consider the full dynamic evolution of a system. Alternatively, empirical interatomic potentials that are based on classical principles require significantly fewer computational resources, which enables simulations to better describe dynamic processes over longer timeframes and on larger scales. Such methods, however, typically require a predefined connectivity between atoms, precluding simulations that involve reactive events. The ReaxFF method was developed to help bridge this gap. Approaching the gap from the classical side, ReaxFF casts the empirical interatomic potential within a bond-order formalism, thus implicitly describing chemical bonding without expensive QM calculations. This article provides an overview of the development, application, and future directions of the ReaxFF method.

Gas-assisted focused electron beam and ion beam processing and fabrication

Abstract: Beams of electrons and ions are now fairly routinely focused to dimensions in the nanometer range. Since the beams can be used to locally alter material at the point where they are incident on a surface, they represent direct nanofabrication tools. The authors will focus here on direct fabrication rather than lithography, which is indirect in that it uses the intermediary of resist. In the case of both ions and electrons, material addition or removal can be achieved using precursor gases. In addition ions can also alter material by sputtering (milling), by damage, or by implantation. Many material removal and deposition processes employing precursor gases have been developed for numerous practical applications, such as mask repair, circuit restructuring and repair, and sample sectioning. The authors will also discuss structures that are made for research purposes or for demonstration of the processing capabilities. In many cases the minimum dimensions at which these processes can be realized are considerably larger than the beam diameters. The atomic level mechanisms responsible for the precursor gas activation have not been studied in detail in many cases. The authors will review the state of the art and level of understanding of direct ion and electron beam fabrication and point out some of the unsolved problems.