H
Heike Riel
Researcher at IBM
Publications - 215
Citations - 11539
Heike Riel is an academic researcher from IBM. The author has contributed to research in topics: Nanowire & Field-effect transistor. The author has an hindex of 49, co-authored 207 publications receiving 10484 citations.
Papers
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Journal ArticleDOI
Tunnel field-effect transistors as energy-efficient electronic switches
Adrian M. Ionescu,Heike Riel +1 more
TL;DR: Tunnels based on ultrathin semiconducting films or nanowires could achieve a 100-fold power reduction over complementary metal–oxide–semiconductor transistors, so integrating tunnel FETs with CMOS technology could improve low-power integrated circuits.
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Realization of a silicon nanowire vertical surround-gate field-effect transistor.
TL;DR: A generic process for fabricating a vertical surround-gate field-effect transistor (VS-FET) based on epitaxially grown nanowires is described, and a first electrical characterization proving the feasibility of the process developed and the basic functionality of this device is presented.
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Toward Nanowire Electronics
TL;DR: In this article, the electronic transport properties of nanowire field effect transistors (NW-FETs) are discussed in detail, and four different device concepts are studied in detail.
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Donor deactivation in silicon nanostructures.
TL;DR: It is shown that the donor ionization energy increases with decreasing nanowire radius, and that it profoundly modifies the attainable free carrier density at values of the radius much larger than those at which quantum and dopant surface segregation effects set in.
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Transient and steady-state behavior of space charges in multilayer organic light-emitting diodes
TL;DR: In this paper, a numerical study of space charge effects in multilayer organic light-emitting diodes (OLEDs) is presented, where the accumulation of charges at internal interfaces and their signature in the transient response as well as the electric field distribution are discussed.