Henning Feick

Bio: Henning Feick is an academic researcher from Lawrence Berkeley National Laboratory. The author has contributed to research in topics: Nanowire & Heterojunction. The author has an hindex of 4, co-authored 10 publications receiving 12021 citations. Previous affiliations of Henning Feick include University of California.

Room-temperature ultraviolet nanowire nanolasers

Abstract: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated The self-organized, oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission linewidth less than 03 nanometer The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized laser light sources These short-wavelength nanolasers could have myriad applications, including optical computing, information storage, and microanalysis

Catalytic Growth of Zinc Oxide Nanowires by Vapor Transport

Abstract: nanoparticles in dimethylsulfoxide onto the PLL film for about 20 min, after which it was rinsed in dimethylsulfoxide and then dichloromethane. From the molecular weight, the average length of the PLL is about 30 nm. Therefore, each polymer can accommodate about seven or eight nanoparticles. [20] L. Clarke, M. N. Wybourne, M. Yan, S. X. Cai, J. F. W. Keana, Appl. Phys. Lett. 1997, 71, 617. [21] A. A. Middleton, N. S. Wingreen, Phys. Rev. Lett. 1993, 71, 3198. [22] G. Y. Hu, R. F. O'Connell, Phys. Rev. B 1994, 49, 16 773. [23] A. J. Rimberg, T. R. Ho, J. Clarke, Phys. Rev. Lett. 1995, 74, 4714. [24] L. Clarke, M. N. Wybourne, M. Yan, S. X. Cai, L. O. Brown, J. Hutchison, J. F. W. Keana, J. Vac. Sci. Technol. B 1997, 15, 2925. [25] The capacitance matrix was calculated for different chain lengths using the software package FastCap MIT (1992). We used the nanoparticle dimensions given in the text and a ligand shell dielectric constant of 3. For nanoclusters away from the end of the chains we obtain Cdd » 0.04 aF and Cg » 0.17 aF. As expected, the value of Cg is slightly larger than the value calculated for an isolated metal sphere of radius a coated with a dielectric shell, Cg» (4pee0a)/(1 + (a/d)(e±1)) = 0.14 aF, where d is the total radius of the core plus ligand shell. [26] Simulations were carried out using both MOSES (Monte-Carlo SingleElectronics Simulator, R. H. Chen) and SIMON (Simulation of Nano Structures, C. Wasshuber). [27] S. Chen, R. S. Ingram, M. J. Hostetler, J. J. Pietron, R. W. Murray, T. G. Schaaff, J. T. Khoury, M. M. Alvarez, R. L. Whetton, Science 1998, 280, 2098. [28] L. Y. Gorelik, A. Isacsson, M. V. Voinova, B. Kasemo, R. I. Shekhter, M. Jonson, Phys. Rev. Lett. 1998, 80, 4526. [29] O. D. Häberlen, S. C. Chung, M. Stener, N. Rösch, J. Chem. Phys. 1997, 106, 5189. [30] Y. Awakuni, J. H. Calderwood, J. Phys. D: Appl. Phys. 1972, 5, 1038. [31] G. Markovich, C. P. Collier, J. R. Heath, Phys. Rev. Lett. 1998, 80, 3807. [32] C. P. Collier, R. J. Saykally, J. J. Shiang, S. E. Hendrichs, J. R. Heath, Science 1997, 277, 1978. [33] N. Mott, Metal Insulator Transitions, Taylor and Francis, London 1990.

Room-Temperature Ultraviolet Nanowire Nanolasers.

Abstract: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated. The self-organized, oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process. These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers. Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission linewidth less than 0.3 nanometer. The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized laser light sources. These short-wavelength nanolasers could have myriad applications, including optical computing, information storage, and microanalysis.

Nanowires, nanostructures and devices fabricated therefrom

Abstract: One-dimensional nanostructures having uniform diameters of less than approximately 200 nm. These inventive nanostructures, which we refer to as “nanowires”, include single-crystalline homostructures as well as heterostructures of at least two single-crystalline materials having different chemical compositions. Because single-crystalline materials are used to form the heterostructure, the resultant heterostructure will be single-crystalline as well. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire that comprises different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN).

Nanostructures, assembling method for nanowires, and device assembled from nanowires

Abstract: PROBLEM TO BE SOLVED: To provide one-dimensional nanostructures having diameters along a vertical axis wherein the diameters do not change nearly 10% or more at a section showing the maximum diameter change and the maximum diameters of less than approximately 200 nm, regarding substantially crystalline nanowire structures. SOLUTION: The one-dimensional nanostructures have the uniform diameters of less than approximately 200 nm. The new nanostructures called as "nanowires" include single-crystalline homostructures as well as heterostructures of two single-crystalline materials having different chemical compositions. The resulting heterostructures similarly become single crystals since the single-crystalline materials are used for forming the heterostructures. The nanowire heterostructures are generally based on a semiconducting wire wherein the doping and composition are controlled in either the longitudinal or radial directions, or in both directions, to yield a wire including different materials. Examples of resulting nanowire heterostructures include a longitudinal heterostructure nanowire (LOHN) and a coaxial heterostructure nanowire (COHN). COPYRIGHT: (C)2011,JPO&INPIT

A comprehensive review of zno materials and devices

Abstract: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

Room-temperature ultraviolet nanowire nanolasers

Abstract: Room-temperature ultraviolet lasing in semiconductor nanowire arrays has been demonstrated The self-organized, oriented zinc oxide nanowires grown on sapphire substrates were synthesized with a simple vapor transport and condensation process These wide band-gap semiconductor nanowires form natural laser cavities with diameters varying from 20 to 150 nanometers and lengths up to 10 micrometers Under optical excitation, surface-emitting lasing action was observed at 385 nanometers, with an emission linewidth less than 03 nanometer The chemical flexibility and the one-dimensionality of the nanowires make them ideal miniaturized laser light sources These short-wavelength nanolasers could have myriad applications, including optical computing, information storage, and microanalysis

Piezoelectric Nanogenerators Based on Zinc Oxide Nanowire Arrays

Abstract: We have converted nanoscale mechanical energy into electrical energy by means of piezoelectric zinc oxide nanowire (NW) arrays. The aligned NWs are deflected with a conductive atomic force microscope tip in contact mode. The coupling of piezoelectric and semiconducting properties in zinc oxide creates a strain field and charge separation across the NW as a result of its bending. The rectifying characteristic of the Schottky barrier formed between the metal tip and the NW leads to electrical current generation. The efficiency of the NW-based piezoelectric power generator is estimated to be 17 to 30%. This approach has the potential of converting mechanical, vibrational, and/or hydraulic energy into electricity for powering nanodevices.

High-performance lithium battery anodes using silicon nanowires

Abstract: There is great interest in developing rechargeable lithium batteries with higher energy capacity and longer cycle life for applications in portable electronic devices, electric vehicles and implantable medical devices. Silicon is an attractive anode material for lithium batteries because it has a low discharge potential and the highest known theoretical charge capacity (4,200 mAh g(-1); ref. 2). Although this is more than ten times higher than existing graphite anodes and much larger than various nitride and oxide materials, silicon anodes have limited applications because silicon's volume changes by 400% upon insertion and extraction of lithium which results in pulverization and capacity fading. Here, we show that silicon nanowire battery electrodes circumvent these issues as they can accommodate large strain without pulverization, provide good electronic contact and conduction, and display short lithium insertion distances. We achieved the theoretical charge capacity for silicon anodes and maintained a discharge capacity close to 75% of this maximum, with little fading during cycling.

Zinc oxide nanostructures: growth, properties and applications

Abstract: Zinc oxide is a unique material that exhibits semiconducting and piezoelectric dual properties. Using a solid–vapour phase thermal sublimation technique, nanocombs, nanorings, nanohelixes/nanosprings, nanobelts, nanowires and nanocages of ZnO have been synthesized under specific growth conditions. These unique nanostructures unambiguously demonstrate that ZnO probably has the richest family of nanostructures among all materials, both in structures and in properties. The nanostructures could have novel applications in optoelectronics, sensors, transducers and biomedical sciences. This article reviews the various nanostructures of ZnO grown by the solid–vapour phase technique and their corresponding growth mechanisms. The application of ZnO nanobelts as nanosensors, nanocantilevers, field effect transistors and nanoresonators is demonstrated.