Showing papers by "Hermann Wagner published in 1980"
TL;DR: In this article, the effect of implantation of 20-120 keV alkali (Li +, Na +, K + ) and halogen (F −, Cl − ) ions in glow-discharged and evaporated amorphous silicon films is monitored by thermopower and conductivity measurements.
Abstract: The effect of implantation of 20–120 keV alkali (Li + , Na + , K + ) and halogen (F − , Cl − ) ions in glow-discharged and evaporated amorphous silicon films is monitored by thermopower and conductivity measurements. After annealing, an alkali concentration of 1% causes a clear n-type doping effect with conductivity values comparable to phosphorus doping. Implanted halogen ions show little electrical activity, except that in concentrations >1% an increased thermal stability of phosphorus doping is obtained.
17 citations