Hichem M'Saad

TL;DR: In this paper, a method of forming a layer on a substrate in a chamber, wherein the substrate has at least one formed feature across its surface, is provided, which includes exposing the substrate to a silicon-containing precursor in the presence of a plasma to deposit a layer, treating the deposited layer with a plasma, and repeating the exposing and treating until a desired thickness of the layer is obtained.

TL;DR: In this article, a method for processing a substrate including positioning the substrate in a processing chamber and introducing a processing gas into the processing chamber, wherein the processing gas comprises a carrier gas, hydrogen, and one or more precursor compounds, generating a plasma of processing gas by applying power from a dual-frequency RF source, and depositing an amorphous carbon layer on the substrate.

TL;DR: In this article, a method of etching a substrate using a double patterned amorphous carbon layer on the substrate as a hardmask is described. But this method requires a non-carbon based layer is used as a capping layer before the pattern is transferred into the substrate.

TL;DR: In this article, a remote plasma source is used to generate reactive species that clean interior surfaces of a processing chamber in the absence of RF power in the chamber, such as amorphous carbon films, barrier films comprising silicon and carbon, and low dielectric constant films.

TL;DR: In this article, a method of depositing a low dielectric constant film on a substrate and post-treating the low-dielectric-constant film is provided.