H
Hideki Takagi
Researcher at National Institute of Advanced Industrial Science and Technology
Publications - 214
Citations - 3122
Hideki Takagi is an academic researcher from National Institute of Advanced Industrial Science and Technology. The author has contributed to research in topics: Wafer & Wafer bonding. The author has an hindex of 26, co-authored 199 publications receiving 2795 citations. Previous affiliations of Hideki Takagi include Chiba Institute of Technology & Japanese Ministry of International Trade and Industry.
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Surface activated bonding of silicon wafers at room temperature
TL;DR: In this paper, a method to bond silicon wafers directly at room temperature was developed, where surfaces of two silicon samples are activated by argon atom beam etching and brought into contact in a vacuum.
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Effect of Surface Roughness on Room-Temperature Wafer Bonding by Ar Beam Surface Activation
TL;DR: In this article, the authors measured surface roughness enhancement caused by Ar beam etching and investigated the relationship between roughness and bonding properties such as strength and interfacial voids.
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High external quantum efficiency (10%) AlGaN-based deep-ultraviolet light-emitting diodes achieved by using highly reflective photonic crystal on p-AlGaN contact layer
Yukio Kashima,Noritoshi Maeda,Eriko Matsuura,Masafumi Jo,Takeshi Iwai,Toshiro Morita,Mitsunori Kokubo,Takaharu Tashiro,Ryuichiro Kamimura,Yamato Osada,Hideki Takagi,Hideki Hirayama +11 more
TL;DR: In this article, a highly reflective photonic crystal (HR-PhC) was introduced into the surface of the p-AlGaN contact layer, thereby achieving a high external quantum efficiency (EQE).
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Low-temperature direct bonding of silicon and silicon dioxide by the surface activation method
TL;DR: In this paper, low-temperature bonding of Si and SiO 2 by the surface activation method in vacuum has been investigated and shown to be twice as strong as conventional bonding before annealing.
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Room-temperature bonding of lithium niobate and silicon wafers by argon-beam surface activation
TL;DR: In this article, the surfaces of the specimens are etched by fast argon atom beam and bonded to each other in vacuum, achieving bonding strength equivalent to that of the bulk material without any heat treatment.