Hiro Munekata

Bio: Hiro Munekata is an academic researcher from Tokyo Institute of Technology. The author has contributed to research in topics: Magnetization & Magnetic semiconductor. The author has an hindex of 27, co-authored 180 publications receiving 3012 citations.

Ferromagnetic order induced by photogenerated carriers in magnetic iii-v semiconductor heterostructures of (in,mn)as/gasb

Abstract: We report the inducement of a ferromagnetic order by photogenerated carriers in a novel III-V--based magnetic semiconductor heterostructure $p$-(In,Mn)As/GaSb grown by molecular beam epitaxy. At low temperatures $(l35\mathrm{K})$, samples preserve ferromagnetic order even after the light is switched off, whereas they recover their original paramagnetic condition above 35 K. The results are explained in terms of hole transfer from GaSb to InMnAs in the heterostructure, which enhances a ferromagnetic spin exchange among Mn ions in the InMnAs layer.

Preparation of (In,Mn)As/(Ga,Al)Sb magnetic semiconductor heterostructures and their ferromagnetic characteristics

Abstract: A series of III‐V‐based magnetic semiconductor heterostructures, p‐type (In,Mn)As/(Ga,Al)Sb, has been grown by molecular beam epitaxy. Studies on magnetotransport and magneto‐optical properties show that perpendicular ferromagnetic order occurs in the heterostructures with thin (In,Mn)As layers. The origin is discussed in terms of both carrier‐ and strain‐induced effects.

Photoinduced precession of magnetization in ferromagnetic (Ga,Mn)As.

Abstract: Precession of magnetization induced by pulsed optical excitation is observed in a ferromagnetic semiconductor (Ga,Mn)As by time-resolved magneto-optical measurements. It appears as complicated oscillations of a polarization plane of linearly polarized probe pulses, but is reproduced by gyromagnetic theory incorporating an impulsive change in an effective magnetic field due to a change in the magnetic anisotropy. The shape of the impulse suggests a significant nonthermal contribution of photogenerated carriers to the change in anisotropy through spin-orbit interaction.

Control of magnetization reversal process by light illumination in ferromagnetic semiconductor heterostructure p-(In, Mn)As/GaSb

Abstract: The reduction in coercive force by light illumination has been found in ferromagnetic semiconductor heterostructure p-(In, Mn)As/GaSb prepared by molecular-beam epitaxy. Enhanced ferromagnetic coupling between Mn ions, arising from excess photogenerated holes, reduces the domain wall energy and changes the magnetization hysteresis characteristics. The value of coercive force returns to the original value when excess holes recombine with trapped electrons.

Local structure and chemical valency of Mn impurities in wide-band-gap III-V magnetic alloy semiconductors Ga1-xMnxN

Abstract: Local structure and effective chemical valency of Mn impurity atoms incorporated in wide-band-gap (Ga,Mn)N epilayers have been investigated by using x-ray absorption fine structure techniques. The x-ray results provide direct evidence for the substitution of majority Mn atoms for the Ga sites in GaN, with an effective valency close to Mn(II), up to a rather high Mn concentration about 2 at. %. A small fraction of the impurity atoms could also form Mn clusters.

Spintronics: a spin-based electronics vision for the future.

Abstract: This review describes a new paradigm of electronics based on the spin degree of freedom of the electron. Either adding the spin degree of freedom to conventional charge-based electronic devices or using the spin alone has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices. To successfully incorporate spins into existing semiconductor technology, one has to resolve technical issues such as efficient injection, transport, control and manipulation, and detection of spin polarization as well as spin-polarized currents. Recent advances in new materials engineering hold the promise of realizing spintronic devices in the near future. We review the current state of the spin-based devices, efforts in new materials fabrication, issues in spin transport, and optical spin manipulation.

Spintronics: Fundamentals and applications

Abstract: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.

Making Nonmagnetic Semiconductors Ferromagnetic

Abstract: REVIEW Semiconductor devices generally take advantage of the charge of electrons, whereas magnetic materials are used for recording information involving electron spin. To make use of both charge and spin of electrons in semiconductors, a high concentration of magnetic elements can be introduced in nonmagnetic III-V semiconductors currently in use for devices. Low solubility of magnetic elements was overcome by low-temperature nonequilibrium molecular beam epitaxial growth, and ferromagnetic (Ga,Mn)As was realized. Magnetotransport measurements revealed that the magnetic transition temperature can be as high as 110 kelvin. The origin of the ferromagnetic interaction is discussed. Multilayer heterostructures including resonant tunneling diodes (RTDs) have also successfully been fabricated. The magnetic coupling between two ferromagnetic (Ga,Mn)As films separated by a nonmagnetic layer indicated the critical role of the holes in the magnetic coupling. The magnetic coupling in all semiconductor ferromagnetic/nonmagnetic layered structures, together with the possibility of spin filtering in RTDs, shows the potential of the present material system for exploring new physics and for developing new functionality toward future electronics.

Surface chemistry of atomic layer deposition: A case study for the trimethylaluminum/water process

Abstract: Atomic layer deposition(ALD), a chemical vapor deposition technique based on sequential self-terminating gas–solid reactions, has for about four decades been applied for manufacturing conformal inorganic material layers with thickness down to the nanometer range. Despite the numerous successful applications of material growth by ALD, many physicochemical processes that control ALD growth are not yet sufficiently understood. To increase understanding of ALD processes, overviews are needed not only of the existing ALD processes and their applications, but also of the knowledge of the surface chemistry of specific ALD processes. This work aims to start the overviews on specific ALD processes by reviewing the experimental information available on the surface chemistry of the trimethylaluminum/water process. This process is generally known as a rather ideal ALD process, and plenty of information is available on its surface chemistry. This in-depth summary of the surface chemistry of one representative ALD process aims also to provide a view on the current status of understanding the surface chemistry of ALD, in general. The review starts by describing the basic characteristics of ALD, discussing the history of ALD—including the question who made the first ALD experiments—and giving an overview of the two-reactant ALD processes investigated to date. Second, the basic concepts related to the surface chemistry of ALD are described from a generic viewpoint applicable to all ALD processes based on compound reactants. This description includes physicochemical requirements for self-terminating reactions,reaction kinetics, typical chemisorption mechanisms, factors causing saturation, reasons for growth of less than a monolayer per cycle, effect of the temperature and number of cycles on the growth per cycle (GPC), and the growth mode. A comparison is made of three models available for estimating the sterically allowed value of GPC in ALD. Third, the experimental information on the surface chemistry in the trimethylaluminum/water ALD process are reviewed using the concepts developed in the second part of this review. The results are reviewed critically, with an aim to combine the information obtained in different types of investigations, such as growth experiments on flat substrates and reaction chemistry investigation on high-surface-area materials. Although the surface chemistry of the trimethylaluminum/water ALD process is rather well understood, systematic investigations of the reaction kinetics and the growth mode on different substrates are still missing. The last part of the review is devoted to discussing issues which may hamper surface chemistry investigations of ALD, such as problematic historical assumptions, nonstandard terminology, and the effect of experimental conditions on the surface chemistry of ALD. I hope that this review can help the newcomer get acquainted with the exciting and challenging field of surface chemistry of ALD and can serve as a useful guide for the specialist towards the fifth decade of ALD research.

Electric-field control of ferromagnetism

Abstract: It is often assumed that it is not possible to alter the properties of magnetic materials once they have been prepared and put into use. For example, although magnetic materials are used in information technology to store trillions of bits (in the form of magnetization directions established by applying external magnetic fields), the properties of the magnetic medium itself remain unchanged on magnetization reversal. The ability to externally control the properties of magnetic materials would be highly desirable from fundamental and technological viewpoints, particularly in view of recent developments in magnetoelectronics and spintronics. In semiconductors, the conductivity can be varied by applying an electric field, but the electrical manipulation of magnetism has proved elusive. Here we demonstrate electric-field control of ferromagnetism in a thin-film semiconducting alloy, using an insulating-gate field-effect transistor structure. By applying electric fields, we are able to vary isothermally and reversibly the transition temperature of hole-induced ferromagnetism.