Author
Hiroaki Ando
Bio: Hiroaki Ando is an academic researcher from Konan University. The author has contributed to research in topics: Quantum dot & Exciton. The author has an hindex of 21, co-authored 79 publications receiving 2177 citations.
Topics: Quantum dot, Exciton, Photoluminescence, Quantum well, Quantum wire
Papers published on a yearly basis
Papers
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TL;DR: In this paper, the optical properties of dilute GaAS1-xNx alloys have been reported and the authors assign the photoluminescence to band-edge transitions and not to isolated N-N pair emission.
Abstract: We present the first report on the optical properties of dilute GaAS1-xNx alloys (0
654 citations
TL;DR: A spectroscopic method, which enables characterization of a single isolated quantum dot and a quantum wave function interferometry, is applied to an exciton discrete excited state in an InGaAs quantum dot, making possible the observation of coherent population flopping in a 0D excitonic two-level system in a time-domain interferometric measurement.
Abstract: A spectroscopic method, which enables characterization of a single isolated quantum dot and a quantum wave function interferometry, is applied to an exciton discrete excited state in an InGaAs quantum dot. Long coherence of zero-dimensional excitonic states made possible the observation of coherent population flopping in a 0D excitonic two-level system in a time-domain interferometric measurement. Corresponding energy splitting is also manifested in an energy-domain measurement.
430 citations
TL;DR: In this paper, the photon-spin controlled lasing oscillation in GaAs surface-emitting laser at room temperature was investigated, and it was shown that the partial electron-spin alignment, created by optically pumping the GaAs laser active media with circularly polarized pulses, drastically changes the polarization state of the lasing output.
Abstract: We report on photon-spin controlled lasing oscillation in GaAs surface-emitting lasers at room temperature. We demonstrate experimentally that the partial electron-spin alignment, created by optically pumping the GaAs laser active media with circularly polarized pulses, drastically changes the polarization state of the lasing output, causing circularly polarized lasing emission. We discuss the laser polarization characteristics in relation to the measured electron-spin relaxation time.
136 citations
TL;DR: In this article, the spin relaxation of excitons in zero-dimensional semiconductor nanostructures was measured by using a polarization dependent time-resolved photoluminescence method.
Abstract: We report the observation of spin relaxation of excitons in zero-dimensional semiconductor nanostructures. The spin relaxation is measured in InGaAs quantum disks by using a polarization dependent time-resolved photoluminescence method. The spin relaxation time in a zero-dimensional quantum disk is as long as 0.9 ns at 4 K, which is almost twice as long as the radiative recombination lifetime and is considerably longer than that in quantum wells. The temperature dependence of the spin relaxation time suggests the importance of exciton–acoustic phonon interaction.
93 citations
TL;DR: In this article, the breakdown voltage and dark current density in p+n and n+p In0.53Ga0.47As diodes are compared with theoretical values taking the backward tunneling current into account.
Abstract: Breakdown voltage and dark current density in p+n and n+p In0.53Ga0.47As diodes are compared with theoretical values taking the backward tunneling current into account. Predominant origin of dark current in an InGaAs diode is attributed to the tunneling current. Using these results, optimum design of an InGaAs/InP avalanche photodiode (APD) to obtain low dark current, high multiplication gain, high quantum efficiency and fast response is also discussed.
77 citations
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TL;DR: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems as discussed by the authors, where the primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport.
Abstract: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject, including both recent advances and well-established results. The primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport in semiconductors and metals. Spin transport differs from charge transport in that spin is a nonconserved quantity in solids due to spin-orbit and hyperfine coupling. The authors discuss in detail spin decoherence mechanisms in metals and semiconductors. Various theories of spin injection and spin-polarized transport are applied to hybrid structures relevant to spin-based devices and fundamental studies of materials properties. Experimental work is reviewed with the emphasis on projected applications, in which external electric and magnetic fields and illumination by light will be used to control spin and charge dynamics to create new functionalities not feasible or ineffective with conventional electronics.
9,158 citations
TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Abstract: We present a comprehensive, up-to-date compilation of band parameters for the technologically important III–V zinc blende and wurtzite compound semiconductors: GaAs, GaSb, GaP, GaN, AlAs, AlSb, AlP, AlN, InAs, InSb, InP, and InN, along with their ternary and quaternary alloys. Based on a review of the existing literature, complete and consistent parameter sets are given for all materials. Emphasizing the quantities required for band structure calculations, we tabulate the direct and indirect energy gaps, spin-orbit, and crystal-field splittings, alloy bowing parameters, effective masses for electrons, heavy, light, and split-off holes, Luttinger parameters, interband momentum matrix elements, and deformation potentials, including temperature and alloy-composition dependences where available. Heterostructure band offsets are also given, on an absolute scale that allows any material to be aligned relative to any other.
6,349 citations
Proceedings Article•
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TL;DR: In this paper, the authors describe photonic crystals as the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures, and the interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.
Abstract: The term photonic crystals appears because of the analogy between electron waves in crystals and the light waves in artificial periodic dielectric structures. During the recent years the investigation of one-, two-and three-dimensional periodic structures has attracted a widespread attention of the world optics community because of great potentiality of such structures in advanced applied optical fields. The interest in periodic structures has been stimulated by the fast development of semiconductor technology that now allows the fabrication of artificial structures, whose period is comparable with the wavelength of light in the visible and infrared ranges.
2,722 citations
TL;DR: In this paper, a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III-V semiconductors that have been investigated to date is presented.
Abstract: We present a comprehensive and up-to-date compilation of band parameters for all of the nitrogen-containing III–V semiconductors that have been investigated to date. The two main classes are: (1) “conventional” nitrides (wurtzite and zinc-blende GaN, InN, and AlN, along with their alloys) and (2) “dilute” nitrides (zinc-blende ternaries and quaternaries in which a relatively small fraction of N is added to a host III–V material, e.g., GaAsN and GaInAsN). As in our more general review of III–V semiconductor band parameters [I. Vurgaftman et al., J. Appl. Phys. 89, 5815 (2001)], complete and consistent parameter sets are recommended on the basis of a thorough and critical review of the existing literature. We tabulate the direct and indirect energy gaps, spin-orbit and crystal-field splittings, alloy bowing parameters, electron and hole effective masses, deformation potentials, elastic constants, piezoelectric and spontaneous polarization coefficients, as well as heterostructure band offsets. Temperature an...
2,525 citations
TL;DR: The theoretical concepts, experimental tools, and applications of surface photovoltage (SPV) techniques are reviewed in detail in detail as discussed by the authors, where the theoretical discussion is divided into two sections: electrical properties of semiconductor surfaces and the second discusses SPV phenomena.
1,499 citations