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Hiroaki Ueno

Bio: Hiroaki Ueno is an academic researcher from Panasonic. The author has contributed to research in topics: Transistor & Breakdown voltage. The author has an hindex of 15, co-authored 51 publications receiving 1740 citations. Previous affiliations of Hiroaki Ueno include New Energy and Industrial Technology Development Organization.


Papers
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Journal ArticleDOI
TL;DR: In this paper, a gate injection transistor (GIT) was proposed to increase the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation.
Abstract: We have developed a normally-off GaN-based transistor using conductivity modulation, which we call a gate injection transistor (GIT). This new device principle utilizes hole-injection from the p-AlGaN to the AlGaN/GaN heterojunction, which simultaneously increases the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation. The fabricated GIT exhibits a threshold voltage of 1.0 V with a maximum drain current of 200 mA/mm, in which a forward gate voltage of up to 6 V can be applied. The obtained specific ON-state resistance (RON . A) and the OFF-state breakdown voltage (BV ds) are 2.6 mOmega . cm2 and 800 V, respectively. The developed GIT is advantageous for power switching applications.

855 citations

Patent
11 May 2011
TL;DR: In this article, a nitride semiconductor device is defined as: a first semiconductor layer made of first nitride, a second semiconductor, made of second nitride having a bandgap wider than that of the first, a control layer selectively formed on, or above, an upper portion of the second, and a third semiconductor having a p-type conductivity.
Abstract: A nitride semiconductor device includes: a first semiconductor layer made of first nitride semiconductor; a second semiconductor layer formed on a principal surface of the first semiconductor layer and made of second nitride semiconductor having a bandgap wider than that of the first nitride semiconductor; a control layer selectively formed on, or above, an upper portion of the second semiconductor layer and made of third nitride semiconductor having a p-type conductivity; source and drain electrodes formed on the second semiconductor layer at respective sides of the control layer; a gate electrode formed on the control layer; and a fourth semiconductor layer formed on a surface of the first semiconductor layer opposite to the principal surface, having a potential barrier in a valence band with respect to the first nitride semiconductor and made of fourth nitride semiconductor containing aluminum.

224 citations

Journal ArticleDOI
TL;DR: In this article, a high power AlGaN/GaN HFET fabricated on a 4-in conductive Si substrate with a source-via-grounding (SVG) structure is presented.
Abstract: We have developed a high-power AlGaN/GaN HFET fabricated on 4-in conductive Si substrate with a source-via grounding (SVG) structure. The SVG structure enables efficient chip layout and high packing density by the vertical configuration. By establishing a high-quality epitaxial technology on a Si substrate and by significantly reducing the parasitic resistance, a very low specific on-state resistance of 1.9 m/spl Omega//spl middot/cm/sup 2/ is achieved. The breakdown voltage is as high as 350 V, which is attributed to the Si substrate acting as a backside field plate. Because of reduction of the parasitic inductance, very high level of current (2.0 kA/cm/sup 2/) transients, i.e., a turn-on time of 98 ps and a turn-off time of 96 ps, are successfully measured for the first time.

113 citations

Journal ArticleDOI
TL;DR: In this paper, the hole injection from the additional drain-side p-GaN at the OFF state compensates the hole emission in the epilayer, resulting in a drastic suppression of current collapse in HD-GIT.
Abstract: Current collapse is suppressed up to 800 V of drain voltage in our proposed device, Hybrid-Drain-embedded Gate Injection Transistor (HD-GIT), where an additional p-GaN layer is grown on the AlGaN barrier layer and is connected to the drain electrode. We present, based on a device simulation and electroluminescence study, that the hole injection from the additional drain-side p-GaN at the OFF state compensates the hole emission in the epilayer. As a result, the gate-drain access region is not negatively charged at the OFF state, resulting in the drastic suppression of current collapse in HD-GIT.

101 citations

Proceedings ArticleDOI
01 Dec 2006
TL;DR: In this paper, a gate injection transistor (GIT) was proposed, which utilizes hole-injection from p-AlGaN to AlGaN/GaN heterojunction, which increases electron density in the depleted channel resulting in dramatic increase of the drain current.
Abstract: We report a normally-off GaN-based transistor using conductivity modulation, which we call GIT (Gate Injection Transistor). This new device principle utilizes hole-injection from p-AlGaN to AlGaN/GaN heterojunction, which increases electron density in the depleted channel resulting in dramatic increase of the drain current owing to the conductivity modulation. The fabricated GIT exhibits the threshold voltage of 1.0V with high maximum drain current of 200mA/mm. The obtained on-state resistance (Ron·A) and off-state breakdown voltage (BVds) are 2.6mΩ·cm2 and 640V, respectively. These values are the best ones ever reported for GaN-based normally-off transistors.

77 citations


Cited by
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Journal ArticleDOI
TL;DR: Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented and the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated.
Abstract: In this paper, we present a comprehensive reviewand discussion of the state-of-the-art device technology and application development of GaN-on-Si power electronics. Several device technologies for realizing normally off operation that is highly desirable for power switching applications are presented. In addition, the examples of circuit applications that can greatly benefit from the superior performance of GaN power devices are demonstrated. Comparisonwith other competingpower device technology, such as Si superjunction-MOSFET and SiC MOSFET, is also presented and analyzed. Critical issues for commercialization of GaN-on-Si power devices are discussed with regard to cost, reliability, and ease of use.

922 citations

Journal ArticleDOI
TL;DR: In this paper, a gate injection transistor (GIT) was proposed to increase the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation.
Abstract: We have developed a normally-off GaN-based transistor using conductivity modulation, which we call a gate injection transistor (GIT). This new device principle utilizes hole-injection from the p-AlGaN to the AlGaN/GaN heterojunction, which simultaneously increases the electron density in the channel, resulting in a dramatic increase of the drain current owing to the conductivity modulation. The fabricated GIT exhibits a threshold voltage of 1.0 V with a maximum drain current of 200 mA/mm, in which a forward gate voltage of up to 6 V can be applied. The obtained specific ON-state resistance (RON . A) and the OFF-state breakdown voltage (BV ds) are 2.6 mOmega . cm2 and 800 V, respectively. The developed GIT is advantageous for power switching applications.

855 citations

Journal ArticleDOI
TL;DR: This collection of GaN technology developments is not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve.
Abstract: Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to facilitate economic growth in a semiconductor industry that is silicon-based and currently faced with diminishing returns of performance versus cost of investment. At a material level, its high electric field strength and electron mobility have already shown tremendous potential for high frequency communications and photonic applications. Advances in growth on commercially viable large area substrates are now at the point where power conversion applications of GaN are at the cusp of commercialisation. The future for building on the work described here in ways driven by specific challenges emerging from entirely new markets and applications is very exciting. This collection of GaN technology developments is therefore not itself a road map but a valuable collection of global state-of-the-art GaN research that will inform the next phase of the technology as market driven requirements evolve. First generation production devices are igniting large new markets and applications that can only be achieved using the advantages of higher speed, low specific resistivity and low saturation switching transistors. Major investments are being made by industrial companies in a wide variety of markets exploring the use of the technology in new circuit topologies, packaging solutions and system architectures that are required to achieve and optimise the system advantages offered by GaN transistors. It is this momentum that will drive priorities for the next stages of device research gathered here.

788 citations

Journal ArticleDOI
TL;DR: In this article, the features and present status of SiC power devices are briefly described, and several important aspects of the material science and device physics of the SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed.
Abstract: Power semiconductor devices are key components in power conversion systems. Silicon carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable for high-voltage and low-loss power devices. Through recent progress in the crystal growth and process technology of SiC, the production of medium-voltage (600?1700 V) SiC Schottky barrier diodes (SBDs) and power metal?oxide?semiconductor field-effect transistors (MOSFETs) has started. However, basic understanding of the material properties, defect electronics, and the reliability of SiC devices is still poor. In this review paper, the features and present status of SiC power devices are briefly described. Then, several important aspects of the material science and device physics of SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed. Fundamental issues regarding SiC SBDs and power MOSFETs are also discussed.

750 citations

Journal ArticleDOI
TL;DR: The theoretical status of coexistence in nuclei is summarized in this article, where microscopic shell-model descriptions and mean-field descriptions are emphasized, and a systematic data for both even and odd-mass nuclei, selected to illustrate the various ways in which coexistence is observed in nucleis.
Abstract: Shape coexistence in nuclei appears to be unique in the realm of finite many-body quantum systems It differs from the various geometrical arrangements that sometimes occur in a molecule in that in a molecule the various arrangements are of the widely separated atomic nuclei In nuclei the various ''arrangements'' of nucleons involve (sets of) energy eigenstates with different electric quadrupole properties such as moments and transition rates, and different distributions of proton pairs and neutron pairs with respect to their Fermi energies Sometimes two such structures will ''invert'' as a function of the nucleon number, resulting in a sudden and dramatic change in ground-state properties in neighboring isotopes and isotones In the first part of this review the theoretical status of coexistence in nuclei is summarized Two approaches, namely, microscopic shell-model descriptions and mean-field descriptions, are emphasized The second part of this review presents systematic data, for both even- and odd-mass nuclei, selected to illustrate the various ways in which coexistence is observed in nuclei The last part of this review looks to future developments and the issue of the universality of coexistence in nuclei Surprises continue to be discovered With the major advances in reaching to extremes of proton-neutronmore » number, and the anticipated new ''rare isotope beam'' facilities, guidelines for search and discovery are discussed« less

570 citations