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Author

Hisashi Abe

Bio: Hisashi Abe is an academic researcher. The author has contributed to research in topics: Electrode & Etching (microfabrication). The author has an hindex of 7, co-authored 10 publications receiving 277 citations.

Papers
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Patent
11 Mar 1992
TL;DR: In this paper, a plasma gaseous reaction apparatus including a reaction chamber, a system for supplying reaction gas to the reaction chamber and an exhaust system for exhausting unnecessary reaction products is presented.
Abstract: A plasma gaseous reaction apparatus including a reaction chamber, a system for supplying reaction gas to the reaction chamber and an exhaust system for exhausting unnecessary reaction products. Specifically, the apparatus includes a pair of facing electrodes disposed in the reaction chamber which are covered by shields except the area in which the electrodes face each other. The shields may include a first and second shield wherein the inner first shield is electrically insulated from the electrodes and the outer second shield is kept at earth potential. The apparatus further includes a substrate container for supporting substrates which surrounds the substrates by a frame. The outside of the substrate container is kept in the earth potential and is covered by a conductor plate electrically insulated from the container. The shields and substrate container are configured such that plasma generated by electric power supplied by the electrodes is confined in a space surrounded by the shields and the container.

120 citations

Patent
24 Jul 1996
TL;DR: In this article, a substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber.
Abstract: A substrate processing apparatus includes a plurality of evacuable treatment chambers connected to one another via an evacuable common chamber, and the common chamber is provided with means for transporting a substrate between each treatment chamber. More specifically, a substrate processing apparatus includes a plurality of evacuable treatment chambers, at least one of said treatment chambers having a film formation function through a vapor phase reaction therein, at least one of said treatment chambers having an annealing function with light irradiation and at least one of said treatment chambers having a heating function therein. The apparatus also has a common chamber through which said plurality of evacuable treatment chambers are connected to one another, and a transportation means provided in said common chamber for transporting a substrate between each treatment chamber.

61 citations

Patent
11 Apr 2005
TL;DR: In this paper, a technique for manufacturing a dense crystalline semiconductor film without a cavity between crystal grains is presented, in which a plasma region is formed between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a reaction chamber of a plasma CVD apparatus is set to 450 Pa to 13332 Pa, and a distance between the first electrodes and the second electrode of the plasma cVD apparatus was set to 1 mm to 20 mm.
Abstract: An object of the present invention is to provide a technique for manufacturing a dense crystalline semiconductor film without a cavity between crystal grains. A plasma region is formed between a first electrode and a second electrode by supplying high-frequency power of 60 MHz or less to the first electrode under a condition where a pressure of a reactive gas in a reaction chamber of a plasma CVD apparatus is set to 450 Pa to 13332 Pa, and a distance between the first electrode and the second electrode of the plasma CVD apparatus is set to 1 mm to 20 mm; crystalline deposition precursors are formed in a gas phase including the plasma region; a crystal nucleus of 5 nm to 15 nm is formed by depositing the deposition precursors; and a microcrystalline semiconductor film is formed by growing a crystal from the crystal nucleus.

48 citations

Patent
11 Jun 1993
TL;DR: In this paper, a plurality of plasma reacting furnaces are arranged in parallel in a common room so as to successively laminate a plurality on a substrate and permitting the degree of vacuum in the common room to be higher than the degree in the reacting furnace.
Abstract: PURPOSE:To improve temperature accuracy and mass-produce high quality semiconductor devices by providing a plurality of plasma reacting furnaces arranged in parallel in a common room so as to successively laminate a plurality of films on a substrate and permitting the degree of vacuum in the common room to be higher than the degree of vacuum in the reacting furnace. CONSTITUTION:A first reacting system 1 is provided with a first room 7, and a substrate and a holder 4 reciprocate between a reacting furnace 1 and the first room 7 by a shifting mechanism 12 provided in the first room 7. In the same manner, a second reacting furnace 42 and a third reacting furnace 43 are provided with shifting mechanisms 29 and 41. A common room 7 is provided for the first, second and third rooms and a first and a second preliminary rooms 8 and 35 are provided at the front entrance and rear exit of the common room so as not to introduce oxygen and water in the air into the reacting system. Since the manufacturing device takes the substrate into the vacuum common room 7 from the reacting furnace for each reaction, the vacuum degree in the common room is controlled to be higher than the vacuum degree in the reacting furnace in order to prevent reactive gas of each reacting system from entering into the reacting furnace.

19 citations

Patent
03 Jun 1992
TL;DR: In this paper, the authors proposed a method to realize uniform anisotropic etching of a large area while allowing a large number of substrate treatments by setting-up a plurality of substrates to be treated during plasma discharge to be formed between the electrodes of a pair of parallel flat plates.
Abstract: PURPOSE: To realize anisotropic etching of a large area while allowing a large number of substrate treatments by setting-up a plurality substrates to be treated during plasma discharge to be formed between the electrodes of a pair of parallel flat plates so as to supply power to a third electrode set up close to this substrate CONSTITUTION: A container 5 having a pair of discharge electrodes 1, 2 and the substrate suscepters 4 able to set up the substrates 3 to be treated between these electrodes is located inside an etching reaction chamber 6 A plurality of substrates 3 to be treated are set up near the positive columns of plasma discharge generated by the discharge electrodes 1, 2 by means of the substrate suscepters 4 These substrate suscepters are connected to power supply 8 for bias separate from power supply 7 for discharge connected to the discharge electrode so as to provide a bias electric field to the substrates to be treated as a third electrode Thereby, uniform anisotropic etching having a large area can be realized COPYRIGHT: (C)1993,JPO&Japio

10 citations


Cited by
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Patent
21 May 2004
TL;DR: In this article, a capping layer may have a thickness of about 5 A or less, where A is the thickness of the dielectric layer and C is the number of capping pulses.
Abstract: Embodiments of the invention provide methods for depositing a capping layer on a dielectric layer disposed on a substrate. In one example, a process includes exposing a substrate to a deposition process to form a dielectric layer thereon, exposing the substrate to sequential pulses of a silicon precursor and an oxidizing gas to form a silicon-containing layer on the dielectric layer during a deposition process, exposing the substrate to a nitridation process to form a capping layer thereon and exposing the substrate to an annealing process for a predetermined time. The capping layer may a thickness of about 5 A or less. In one example, the oxidizing gas contains water vapor derived from a hydrogen source gas and an oxygen source gas processed by a water vapor generator containing a catalyst. In another example, the deposition, nitridation and annealing processes occur in the same process chamber.

280 citations

Patent
Craig Metzner1, Shreyas Kher1, Vidyut Gopal1, Shixue Han1, Shankarram Athreya1 
31 May 2006
TL;DR: An atomic layer deposition (ALD) chamber contains an expanding channel having a bottom surface that is sized and shaped to substantially cover a substrate positioned on a substrate pedestal, and process gases form a vortex flow pattern while passing through the expanding channel and sweep across the substrate surface as mentioned in this paper.
Abstract: Embodiments of the invention provide methods for forming hafnium materials, such as oxides and nitrides, by sequentially exposing a substrate to hafnium precursors and active oxygen or nitrogen species (e.g., ozone, oxygen radicals, or nitrogen radicals). The deposited hafnium materials have significantly improved uniformity when deposited by these atomic layer deposition (ALD) processes. In one embodiment, an ALD chamber contains an expanding channel having a bottom surface that is sized and shaped to substantially cover a substrate positioned on a substrate pedestal. During an ALD process for forming hafnium materials, process gases form a vortex flow pattern while passing through the expanding channel and sweep across the substrate surface. The substrate is sequentially exposed to chemical precursors that are pulsed into the process chamber having the vortex flow.

264 citations

Patent
20 Dec 2011
TL;DR: In this paper, a capacitively coupled plasma (CCP) unit is described inside a process chamber, and a pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.
Abstract: Substrate processing systems are described that have a capacitively coupled plasma (CCP) unit positioned inside a process chamber. The CCP unit may include a plasma excitation region formed between a first electrode and a second electrode. The first electrode may include a first plurality of openings to permit a first gas to enter the plasma excitation region, and the second electrode may include a second plurality of openings to permit an activated gas to exit the plasma excitation region. The system may further include a gas inlet for supplying the first gas to the first electrode of the CCP unit, and a pedestal that is operable to support a substrate. The pedestal is positioned below a gas reaction region into which the activated gas travels from the CCP unit.

236 citations

Patent
08 Mar 2013
TL;DR: In this paper, the authors describe a system that includes a first plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access.
Abstract: An exemplary system may include a chamber configured to contain a semiconductor substrate in a processing region of the chamber. The system may include a first remote plasma unit fluidly coupled with a first access of the chamber and configured to deliver a first precursor into the chamber through the first access. The system may still further include a second remote plasma unit fluidly coupled with a second access of the chamber and configured to deliver a second precursor into the chamber through the second access. The first and second access may be fluidly coupled with a mixing region of the chamber that is separate from and fluidly coupled with the processing region of the chamber. The mixing region may be configured to allow the first and second precursors to interact with each other externally from the processing region of the chamber.

235 citations

Patent
Melissa W. Dunn1
10 Jul 2006
TL;DR: In this article, a user-centric system and a method for controlling access to user-specific information maintained in association with a web-services service is presented, where the request identifies the reasons/intentions for accessing the desired information.
Abstract: In a network computing environment, a user-centric system and method for controlling access to user-specific information maintained in association with a web-services service. When a web-services client desires access to the user-specific information, the client sends a request. The request identifies the reasons/intentions for accessing the desired information. The request is compared to the user's existing access permissions. If there is no existing access permission, the request is compared to the user's default preferences. If the default preferences permit the requested access, an access rule is created dynamically and the client's request is filled, without interrupting the user. If the default preferences do not permit the request to be filled, a consent user interface may be invoked. The consent user interface presents one or more consent options to a party with authority to grant consent, thereby permitting the user to control whether the client's access will be filled.

234 citations