H
Hohyun Lee
Researcher at Santa Clara University
Publications - 58
Citations - 8180
Hohyun Lee is an academic researcher from Santa Clara University. The author has contributed to research in topics: Thermoelectric effect & Thermoelectric materials. The author has an hindex of 20, co-authored 57 publications receiving 7375 citations. Previous affiliations of Hohyun Lee include Jet Propulsion Laboratory & Massachusetts Institute of Technology.
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Journal ArticleDOI
New Directions for Low-Dimensional Thermoelectric Materials**
Mildred S. Dresselhaus,Gang Chen,Ming Y. Tang,Ronggui Yang,Hohyun Lee,Dezhi Wang,Zhifeng Ren,Jean-Pierre Fleurial,Pawan Gogna +8 more
TL;DR: In this article, the ability to achieve a simultaneous increase in the power factor and a decrease in the thermal conductivity of the same nanocomposite sample and for transport in the same direction is discussed.
Journal ArticleDOI
Enhanced thermoelectric figure-of-merit in nanostructured p-type silicon germanium bulk alloys.
Giri Joshi,Hohyun Lee,Yucheng Lan,Xiaowei Wang,Gaohua Zhu,Dezhi Wang,Ryan W. Gould,Diana C. Cuff,Ming Y. Tang,Mildred S. Dresselhaus,Gang Chen,Zhifeng Ren +11 more
TL;DR: A dimensionless thermoelectric figure-of-merit (ZT) of 0.95 in p-type nanostructured bulk silicon germanium (SiGe) alloys is achieved, which is about 90% higher than what is currently used in space flight missions, and half higher than the reported record.
Journal ArticleDOI
Nanofluids containing multiwalled carbon nanotubes and their enhanced thermal conductivities
TL;DR: In this article, a concentrated nitric acid was used to disentangle CNT aggregates for producing CNT nanofluids, which were successfully dispersed into polar liquids like distilled water, ethylene glycol and decene with oleylamine as surfactant.
Journal ArticleDOI
Enhanced thermoelectric figure of merit in nanostructured n-type silicon germanium bulk alloy
Xiaowei Wang,Hohyun Lee,Yucheng Lan,Gaohua Zhu,Giri Joshi,Dezhi Wang,Jian Yang,Andrew Muto,M. Y. Tang,J. Klatsky,S. Song,Mildred S. Dresselhaus,Gang Chen,Zhensong Ren +13 more
TL;DR: In this paper, a peak ZT of about 1.3 at 900°C in an n-type nanostructured SiGe bulk alloy has been achieved by using a nanostructure approach, mainly due to a reduction in the thermal conductivity caused by the enhanced phonon scattering off the increased density of nanograin boundaries.
Journal ArticleDOI
Nanostructured Bulk Silicon as an Effective Thermoelectric Material
Sabah K. Bux,Richard G. Blair,Pawan Gogna,Hohyun Lee,Gang Chen,Mildred S. Dresselhaus,Richard B. Kaner,Jean-Pierre Fleurial +7 more
TL;DR: In this article, the authors used nanostructured bulk silicon with limited degradation in its electron mobility, leading to an unprecedented increase by a factor of 3.5 in its performance over that of the parent single-crystal material.