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Homer Alan Mantooth

Bio: Homer Alan Mantooth is an academic researcher from University of Arkansas. The author has contributed to research in topics: Power semiconductor device & Silicon carbide. The author has an hindex of 25, co-authored 105 publications receiving 2312 citations.


Papers
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Journal ArticleDOI
TL;DR: In this article, the capability of SiC power semiconductor devices, in particular JFET and Schottky barrier diodes (SBDs), for application in high-temperature power electronics was evaluated.
Abstract: This paper evaluates the capability of SiC power semiconductor devices, in particular JFET and Schottky barrier diodes (SBD) for application in high-temperature power electronics. SiC JFETs and SBDs were packaged in high temperature packages to measure the dc characteristics of these SiC devices at ambient temperatures ranging from 25degC (room temperature) up to 450degC. The results show that both devices can operate at 450degC, which is impossible for conventional Si devices, at the expense of significant derating. The current capability of the SiC SBD does not change with temperature, but as expected the JFET current decreases with rising temperatures. A 100 V, 25 W dc-dc converter is used as an example of a high-temperature power-electronics circuit because of circuit simplicity. The converter is designed and built in accordance with the static characteristics of the SiC devices measured under extremely high ambient temperatures, and then tested up to an ambient temperature of 400degC. The conduction loss of the SiC JFET increases slightly with increasing temperatures, as predicted from its dc characteristics, but its switching characteristics hardly change. Thus, SiC devices are well suited for operation in harsh temperature environments like aerospace and automotive applications.

310 citations

Journal ArticleDOI
TL;DR: In this paper, the performance of a 2-kV, 5-A 4-H silicon carbide (SiC) power MOSFET was compared with a 400-V and 2kV SiC MOS FET, with the exception that the SiC device requires twice the gate drive voltage.
Abstract: A compact circuit simulator model is used to describe the performance of a 2-kV, 5-A 4-H silicon carbide (SiC) power DiMOSFET and to perform a detailed comparison with the performance of a widely used 400-V, 5-A Si power MOSFET. The model's channel current expressions are unique in that they include the channel regions at the corners of the square or hexagonal cells that turn on at lower gate voltages and the enhanced linear region transconductance due to diffusion in the nonuniformly doped channel. It is shown that the model accurately describes the static and dynamic performance of both the Si and SiC devices and that the diffusion-enhanced channel conductance is essential to describe the SiC DiMOSFET on-state characteristics. The detailed device comparisons reveal that both the on-state performance and switching performance at 25degC are similar between the 400-V Si and 2-kV SiC MOSFETs, with the exception that the SiC device requires twice the gate drive voltage. The main difference between the devices is that the SiC has a five times higher voltage rating without an increase in the specific on-resistance. At higher temperatures (above 100degC), the Si device has a severe reduction in conduction capability, whereas the SiC on-resistance is only minimally affected

198 citations

Journal ArticleDOI
TL;DR: In this article, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail, which can provide high simulation speed with high accuracy, which has proved to be more favorable in dynamic thermal characterization on power semiconductor switches.
Abstract: In this paper, a new thermal model based on the Fourier series solution of heat conduction equation has been introduced in detail. 1-D and 2-D Fourier series thermal models have been programmed in MATLAB/Simulink. Compared with the traditional finite-difference thermal model and equivalent RC thermal network, the new thermal model can provide high simulation speed with high accuracy, which has been proved to be more favorable in dynamic thermal characterization on power semiconductor switches. The complete electrothermal simulation models of insulated gate bipolar transistor (IGBT) and power diodes under inductive load switching condition have been successfully implemented in MATLAB/Simulink. The experimental results on IGBT and power diodes with clamped inductive load switching tests have verified the new electrothermal simulation model. The advantage of Fourier series thermal model over widely used equivalent RC thermal network in dynamic thermal characterization has also been validated by the measured junction temperature.

135 citations

Journal ArticleDOI
TL;DR: Part I reviewed compact models for silicon carbide (SiC) power diodes and MOSFETs and part II completes the review of SiC devices and covers gallium nitride devices as well.
Abstract: Wide bandgap power devices have emerged as an often superior alternative power switch technology for many power electronic applications. These devices theoretically have excellent material properties enabling power device operation at higher switching frequencies and higher temperatures compared with conventional silicon devices. However, material defects can dominate device behavior, particularly over time, and this should be strongly considered when trying to model actual characteristics of currently available devices. Compact models of wide bandgap power devices are necessary to analyze and evaluate their impact on circuit and system performance. Available compact models, i.e., models compatible with circuit-level simulators, are reviewed. In particular, this paper presents a review of compact models for silicon carbide power diodes and MOSFETs.

115 citations

Journal ArticleDOI
TL;DR: In this article, a Si insulated-gate bipolar transistor-SiC Schottky diode hybrid 55-kW inverter was developed for circuit simulators and compared with those of a similar all-Si inverter.
Abstract: Silicon carbide (SiC) power devices are expected to have an impact on power converter efficiency, weight, volume, and reliability. Currently, only SiC Schottky diodes are commercially available at relatively low current ratings. Oak Ridge National Laboratory has collaborated with Cree and Semikron to build a Si insulated-gate bipolar transistor-SiC Schottky diode hybrid 55-kW inverter by replacing the Si p-n diodes in Semikron's automotive inverter with Cree's made-to-order higher current SiC Schottky diodes. This paper presents the developed models of these diodes for circuit simulators, shows inverter test results, and compares the results with those of a similar all-Si inverter.

88 citations


Cited by
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Journal ArticleDOI
TL;DR: In this article, a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation is presented.
Abstract: Wide bandgap semiconductors show superior material properties enabling potential power device operation at higher temperatures, voltages, and switching speeds than current Si technology. As a result, a new generation of power devices is being developed for power converter applications in which traditional Si power devices show limited operation. The use of these new power semiconductor devices will allow both an important improvement in the performance of existing power converters and the development of new power converters, accounting for an increase in the efficiency of the electric energy transformations and a more rational use of the electric energy. At present, SiC and GaN are the more promising semiconductor materials for these new power devices as a consequence of their outstanding properties, commercial availability of starting material, and maturity of their technological processes. This paper presents a review of recent progresses in the development of SiC- and GaN-based power semiconductor devices together with an overall view of the state of the art of this new device generation.

1,648 citations

Journal ArticleDOI
01 Jul 1968-Nature
TL;DR: The Thermophysical Properties Research Literature Retrieval Guide as discussed by the authors was published by Y. S. Touloukian, J. K. Gerritsen and N. Y. Moore.
Abstract: Thermophysical Properties Research Literature Retrieval Guide Edited by Y. S. Touloukian, J. K. Gerritsen and N. Y. Moore Second edition, revised and expanded. Book 1: Pp. xxi + 819. Book 2: Pp.621. Book 3: Pp. ix + 1315. (New York: Plenum Press, 1967.) n.p.

1,240 citations

Journal ArticleDOI
TL;DR: This paper presents a review of ESSs for transport and grid applications, covering several aspects as the storage technology, the main applications, and the power converters used to operate some of the energy storage technologies.
Abstract: Energy storage systems (ESSs) are enabling technologies for well-established and new applications such as power peak shaving, electric vehicles, integration of renewable energies, etc. This paper presents a review of ESSs for transport and grid applications, covering several aspects as the storage technology, the main applications, and the power converters used to operate some of the energy storage technologies. Special attention is given to the different applications, providing a deep description of the system and addressing the most suitable storage technology. The main objective of this paper is to introduce the subject and to give an updated reference to nonspecialist, academic, and engineers in the field of power electronics.

1,115 citations

Journal ArticleDOI
TL;DR: The state of the art in condition monitoring for power electronics can be found in this paper, where the authors present a review of the current state-of-the-art in power electronics condition monitoring.
Abstract: Condition monitoring (CM) has already been proven to be a cost effective means of enhancing reliability and improving customer service in power equipment, such as transformers and rotating electrical machinery. CM for power semiconductor devices in power electronic converters is at a more embryonic stage; however, as progress is made in understanding semiconductor device failure modes, appropriate sensor technologies, and signal processing techniques, this situation will rapidly improve. This technical review is carried out with the aim of describing the current state of the art in CM research for power electronics. Reliability models for power electronics, including dominant failure mechanisms of devices are described first. This is followed by a description of recently proposed CM techniques. The benefits and limitations of these techniques are then discussed. It is intended that this review will provide the basis for future developments in power electronics CM.

820 citations

Journal ArticleDOI
TL;DR: The impact on the system-level performance, i.e., efficiency, power density, etc., of industrial inverter drives and of dc-dc converter resulting from the new SiC devices is evaluated based on analytical optimization procedures and prototype systems.
Abstract: Switching devices based on wide bandgap materials such as silicon carbide (SiC) offer a significant performance improvement on the switch level (specific on resistance, etc.) compared with Si devices. Well-known examples are SiC diodes employed, for example, in inverter drives with high switching frequencies. In this paper, the impact on the system-level performance, i.e., efficiency, power density, etc., of industrial inverter drives and of dc-dc converter resulting from the new SiC devices is evaluated based on analytical optimization procedures and prototype systems. There, normally on JFETs by SiCED and normally off JFETs by SemiSouth are considered.

687 citations