Author
Horn-von Hoegen M
Bio: Horn-von Hoegen M is an academic researcher. The author has contributed to research in topics: Faceting & Desorption. The author has an hindex of 1, co-authored 1 publications receiving 17 citations.
Topics: Faceting, Desorption, Surface energy, Crystal growth, Layer by layer
Papers
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TL;DR: The decomposition of the planar surface into a “hill-and-valley” structure is explained by a change of the surface free energy during Si deposition and H termination, which favors the growth of facets, which are stable as long as the surface is covered with H.
Abstract: Surface termination of Si(111) with atomic hydrogen changes the homoepitaxial growth from a layer-by-layer mode (bare surface) to a faceting of the whole surface. This decomposition of the planar surface into a ``hill-and-valley'' structure is explained by a change of the surface free energy during Si deposition and H termination. This favors the growth of facets, which are stable as long as the surface is covered with H. The effect is reversible, with the growth mode returning to layer by layer after H desorption.
17 citations
Cited by
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TL;DR: In this paper, the main aspects of the interaction of hydrogen with the atomically clean crystalline silicon surfaces and submonolayer metal/silicon interfaces are discussed, and the feasibility of the selective deposition and extraction of H atoms by a tip of scanning tunneling microscope is shown.
197 citations
TL;DR: In this paper, the authors determined the equilibrium step structures and surface morphology for the whole range of monohydrideterminated (0 0 1)-terrace-plus-step silicon surfaces using scanning tunneling microscopy.
70 citations
TL;DR: In this paper, a 3D geometrical model of the process of CVD diamond growth is presented, which can be used as a predictive tool to predict the shape and size of a diamond crystal grown in a given process configuration.
57 citations
TL;DR: In this paper, spot profile-analysing-low-energy electron diffraction and scanning tunnelling microscopy was used to investigate the silver-mediated multistep formation on vicinal Si(100)-(2 × 1).
23 citations
TL;DR: In this paper, the preparation of the Si(111) surface in H 2 -based chemical vapor ambient as well as its atomic structure after contamination-free transfer to ultrahigh vacuum (UHV) was studied.
12 citations