Horng Long Cheng

Bio: Horng Long Cheng is an academic researcher from National Cheng Kung University. The author has contributed to research in topics: Pentacene & Organic semiconductor. The author has an hindex of 19, co-authored 94 publications receiving 1300 citations. Previous affiliations of Horng Long Cheng include Industrial Technology Research Institute.

Thickness-dependent structural evolutions and growth models in relation to carrier transport properties in polycrystalline pentacene thin films

Abstract: Thickness-dependent crystal structure, surface morphology, surface energy, and molecular structure and microstructure of a series of polycrystalline pentacene films with different film thickness ranging from several monolayers to the several hundred nanometers have been investigated using X-ray diffraction (XRD), atomic force microscopy (AFM), contact angle meter, and Raman spectroscopy. XRD studies indicate that thin film polymorphs transformation behaviours are from the orthorhombic phase to the thin-film phase and then to the triclinic bulk phase as measured by the increased tilt angle (θtilt) of the pentacene molecule from the c-axis toward the a-axis. We propose a growth model that rationalizes the θtilt increased along with increasing film thickness in terms of grain size and surface energy varying with film growth using AFM combined with contact angle measurements. The vibrational characterizations of pentacene molecules in different thickness films were investigated by Raman spectroscopy compared to density functional theory calculations of an isolated molecule. In combination with XRD and AFM the method enables us to distinguish the molecular microstructures in different thin film polymorphs. We proposed a methodology to probe the microscopic parameters determining the carrier transport properties based on Davydov splitting and the characteristics of aromatic C–C stretching modes in Raman spectra. When compared to the triclinic bulk phase at a high thickness, we suggest that the first few monolayer structures located at the dielectric surface could have inferior carrier transport properties due to weak intermolecular interactions, large molecular relaxation energy, and more grain boundaries.

An Orientation-Controlled Pentacene Film Aligned by Photoaligned Polyimide for Organic Thin-Film Transistor Applications

Abstract: We have demonstrated that the photoalignment method could be used to control the structural anisotropy of pentacene films, an active semiconducting layer, in thin-film transistors (TFTs) with conspicuously anisotropic electrical characteristics. The photoaligned pentacene films were characterized with respect to structure and morphology using X-ray diffraction and atomic force microscopy. Compared to the pentacene films that are not controlled, a maximal 25-times increase in field-effect mobility (up to 0.75 cm V–1 s–1) has been achieved in the photoaligned pentacene-based TFTs by aligning pentacene orientation parallel to the direction of current flow with the help of a photoaligned polyimide layer. Mobility anisotropic ratio in the range of 2.7–8.3 for the current flow parallel and perpendicular to the alignment of the photoaligned pentacene films have been observed for photoaligned pentacene-based TFTs.

Effect of surface free energy in gate dielectric in pentacene thin-film transistors

Abstract: The surface free energy of a dielectric has a strong influence on the performance of pentacene thin-film transistors. Research shows that by matching surface free energy in the interface of the dielectric and the orthorhombic thin-film phase of pentacene film, the field-effect mobility of transistors is enhanced reaching above 2.0cm2∕Vs. The authors suggested that a more complete first monolayer of pentacene was formed upon the gate dielectric surface with almost identical surface free energy, benefiting carrier transportation. The research also discusses the mechanism of surface free energy effects on the crystalline size and structural disorder in pentacene film.

Influence of Electric Field on Microstructures of Pentacene Thin‐Films in Field‐Effect Transistors

Abstract: We report on electric-field-induced irreversible structural modifications in pentacene thin films after long-term operation of organic field-effect transistor (OFET) devices. Micro-Raman spectroscopy allows for the analysis of the microstructural modifications of pentacene in the small active channel of OFET during device operation. The results suggest that the herringbone packing of pentacene molecules in a solid film is affected by an external electric field, particularly the source-to-drain field that parallels the a-b lattice plane. The analysis of vibrational frequency and Davydov splitting in the Raman spectra reveals a singular behavior suggesting a reduced separation distance between pentacene molecules after long-term operations and, thus, large intermolecular interactions. These results provide evidence for improved OFET performance after long-term operation, related to the microstructures of organic semiconductors. It is known that the application of large electric fields alters the semiconductor properties of the material owing to the generation of defects and the trapping of charges. However, we first suggest that large electric fields may alter the molecular geometry and further induce structural phase transitions in the pentacene films. These results provide a basis for understanding the improved electronic properties in test devices after long-term operations, including enhanced field-effect mobility, improved on/off current ratio, sharp sub-threshold swing, and a slower decay rate in the output drain current. In addition, the effects of source-to-drain electric field, gate electric field, current and charge carriers, and thermal annealing on the pentacene films during OFET operations are discussed.

Influence of molecular structure and microstructure on device performance of polycrystalline pentacene thin-film transistors

Abstract: The authors have fabricated the pentacene thin films on polymethylmethacrylate (PMMA) and on silicon dioxide dielectric surfaces featuring similar surface energy and surface roughness. On both surfaces the pentacene films displayed high crystal quality from x-ray diffraction scans, although the film on PMMA had significantly smaller grain size. The pentacene transistors with PMMA exhibited excellent electrical characteristics, including high mobility of above 1.1cm2∕Vs, on/off ratio above 106, and sharp subthreshold slope below 1V∕decade. The analysis of molecular microstructure of the pentacene films provided a reasonable explanation for the high performance using resonance micro-Raman spectroscopy.

I and i

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

The larger acenes: versatile organic semiconductors.

Abstract: Acenes have long been the subject of intense study because of the unique electronic properties associated with their pi-bond topology. Recent reports of impressive semiconductor properties of larger homologues have reinvigorated research in this field, leading to new methods for their synthesis, functionalization, and purification, as well as for fabricating organic electronic components. Studies performed on high-purity acene single crystals revealed their intrinsic electronic properties and provide useful benchmarks for thin film device research. New approaches to add functionality were developed to improve the processability of these materials in solution. These new functionalization strategies have recently allowed the synthesis of acenes larger than pentacene, which have hitherto been largely unavailable and poorly studied, as well as investigation of their associated structure/property relationships.

Stretchable form of single crystal silicon for high performance electronics on rubber substrates

Abstract: The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

Pattern Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp

Abstract: The present invention provides methods, systems and system components for transferring, assembling and integrating features and arrays of features having selected nanosized and/or microsized physical dimensions, shapes and spatial orientations. Methods of the present invention utilize principles of ‘soft adhesion’ to guide the transfer, assembly and/or integration of features, such as printable semiconductor elements or other components of electronic devices. Methods of the present invention are useful for transferring features from a donor substrate to the transfer surface of an elastomeric transfer device and, optionally, from the transfer surface of an elastomeric transfer device to the receiving surface of a receiving substrate. The present methods and systems provide highly efficient, registered transfer of features and arrays of features, such as printable semiconductor element, in a concerted manner that maintains the relative spatial orientations of transferred features.

Integrated materials design of organic semiconductors for field-effect transistors

Abstract: The past couple of years have witnessed a remarkable burst in the development of organic field-effect transistors (OFETs), with a number of organic semiconductors surpassing the benchmark mobility of 10 cm2/(V s). In this perspective, we highlight some of the major milestones along the way to provide a historical view of OFET development, introduce the integrated molecular design concepts and process engineering approaches that lead to the current success, and identify the challenges ahead to make OFETs applicable in real applications.