Millimeter-wave (mmW) frequencies between 30 and 300 GHz are a new frontier for cellular communication that offers the promise of orders of magnitude greater bandwidths combined with further gains via beamforming and spatial multiplexing from multielement antenna arrays. This paper surveys measurements and capacity studies to assess this technology with a focus on small cell deployments in urban environments. The conclusions are extremely encouraging; measurements in New York City at 28 and 73 GHz demonstrate that, even in an urban canyon environment, significant non-line-of-sight (NLOS) outdoor, street-level coverage is possible up to approximately 200 m from a potential low-power microcell or picocell base station. In addition, based on statistical channel models from these measurements, it is shown that mmW systems can offer more than an order of magnitude increase in capacity over current state-of-the-art 4G cellular networks at current cell densities. Cellular systems, however, will need to be significantly redesigned to fully achieve these gains. Specifically, the requirement of highly directional and adaptive transmissions, directional isolation between links, and significant possibilities of outage have strong implications on multiple access, channel structure, synchronization, and receiver design. To address these challenges, the paper discusses how various technologies including adaptive beamforming, multihop relaying, heterogeneous network architectures, and carrier aggregation can be leveraged in the mmW context.

Millimeter-Wave Cellular Wireless Networks: Potentials and Challenges

Communication at millimeter wave (mmWave) frequencies is defining a new era of wireless communication. The mmWave band offers higher bandwidth communication channels versus those presently used in commercial wireless systems. The applications of mmWave are immense: wireless local and personal area networks in the unlicensed band, 5G cellular systems, not to mention vehicular area networks, ad hoc networks, and wearables. Signal processing is critical for enabling the next generation of mmWave communication. Due to the use of large antenna arrays at the transmitter and receiver, combined with radio frequency and mixed signal power constraints, new multiple-input multiple-output (MIMO) communication signal processing techniques are needed. Because of the wide bandwidths, low complexity transceiver algorithms become important. There are opportunities to exploit techniques like compressed sensing for channel estimation and beamforming. This article provides an overview of signal processing challenges in mmWave wireless systems, with an emphasis on those faced by using MIMO communication at higher carrier frequencies.

An Overview of Signal Processing Techniques for Millimeter Wave MIMO Systems

With the severe spectrum shortage in conventional cellular bands, millimeter wave (mmW) frequencies between 30 and 300 GHz have been attracting growing attention as a possible candidate for next-generation micro- and picocellular wireless networks. The mmW bands offer orders of magnitude greater spectrum than current cellular allocations and enable very high-dimensional antenna arrays for further gains via beamforming and spatial multiplexing. This paper uses recent real-world measurements at 28 and 73 GHz in New York, NY, USA, to derive detailed spatial statistical models of the channels and uses these models to provide a realistic assessment of mmW micro- and picocellular networks in a dense urban deployment. Statistical models are derived for key channel parameters, including the path loss, number of spatial clusters, angular dispersion, and outage. It is found that, even in highly non-line-of-sight environments, strong signals can be detected 100-200 m from potential cell sites, potentially with multiple clusters to support spatial multiplexing. Moreover, a system simulation based on the models predicts that mmW systems can offer an order of magnitude increase in capacity over current state-of-the-art 4G cellular networks with no increase in cell density from current urban deployments.

http://apps.fcc.gov/ecfs/document/view;NEWECFSSESSION=ThTmVg1SGvsFqgxGKYfckQC26BmBGYLH2jpL5z0dMms1j21m5YTC!-1110365353!-349327291?id=60001013324

Millimeter Wave Channel Modeling and Cellular Capacity Evaluation

Tables of integrals

Substrate-integrated waveguide (SIW) technology represents an emerging and very promising candidate for the development of circuits and components operating in the microwave and millimetre-wave region. SIW structures are generally fabricated by using two rows of conducting cylinders or slots embedded in a dielectric substrate that connects two parallel metal plates, and permit the implementation of classical rectangular waveguide components in planar form, along with printed circuitry, active devices and antennas. This study aims to provide an overview of the recent advances in the modelling, design and technological implementation of SIW structures and components.

Review of substrate-integrated waveguide circuits and antennas

The concept of concurrent multiband low-noise-amplifiers (LNAs) is introduced. A systematic way to design concurrent multiband integrated LNAs in general is developed. Applications of concurrent multiband LNAs in concurrent multiband receivers together with receiver architecture are discussed. Experimental results of a dual-band LNA implemented in a 0.35-/spl mu/m CMOS technology as a demonstration of the concept and theory is presented.

/pdf/concurrent-multiband-low-noise-amplifiers-theory-design-and-1iy48rdapl.pdf

Concurrent multiband low-noise amplifiers-theory, design, and applications

This paper reports the first fully integrated 24-GHz eight-element phased-array receiver in a SiGe BiCMOS technology. The receiver utilizes a heterodyne topology and the signal combining is performed at an IF of 4.8 GHz. The phase-shifting with 4 bits of resolution is realized at the LO port of the first down-conversion mixer. A ring LC voltage-controlled oscillator (VCO) generates 16 different phases of the LO. An integrated 19.2-GHz frequency synthesizer locks the VCO frequency to a 75-MHz external reference. Each signal path achieves a gain of 43 dB, a noise figure of 7.4 dB, and an IIP3 of -11 dBm. The eight-path array achieves an array gain of 61 dB and a peak-to-null ratio of 20 dB and improves the signal-to-noise ratio at the output by 9 dB.

A fully integrated 24-GHz eight-element phased-array receiver in silicon

A local-oscillator phase-shifting approach is introduced to implement a fully integrated 24-GHz phased-array receiver using SiGe technology. Sixteen phases of the local oscillator are generated in one oscillator core, resulting in a raw beam-forming accuracy of 4 bits. These phases are distributed to all eight receiving paths of the array by a symmetric network. The appropriate phase for each path is selected using high-frequency analog multiplexers. The raw beam-steering resolution of the array is better than 10deg for a forward-looking angle, while the array spatial selectivity, without any amplitude correction, is better than 20 dB. The overall gain of the array is 61 dB, while the array improves the input signal-to-noise ratio by 9 dB

A 24-GHz SiGe phased-array receiver-LO phase-shifting approach

A large-scale monolithic silicon nanophotonic phased array on a chip creates and dynamically steers a high-resolution optical beam in free space, enabling emerging applications in sensing, imaging, and communication. The scalable architecture leverages sub-array structure, mitigating the impact of process variation on the phased array performance. In addition, sharing control electronics among multiple optical modulators in the scalable architecture reduces the number of digital-to-analog converters (DACs) required for an $N^{2}$ array from $\mathcal {O}(N^{2})$ to $\mathcal {O}(N)$ , allowing a small silicon footprint. An optical phased array for 1550-nm wavelength with 1024 uniformly spaced optical grating antennas, 1192 optical variable phase shifters, and 168 optical variable attenuators is integrated into a 5.7 mm $\times$ 6.4 mm chip in a commercial 180-nm silicon-on-insulator RF CMOS technology. The control signals for the optical variable phase shifters and attenuators are provided by 136 DACs with 14-bit nonuniform resolution using 2.5-V input-output transistors. The implemented phased array can create 0.03° narrow optical beams that can be steered unambiguously within ±22.5°.

A Monolithically Integrated Large-Scale Optical Phased Array in Silicon-on-Insulator CMOS

Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar transistors and the ever-shrinking feature sizes of MOSFETs hold a lot of promise, new design techniques need to be devised to deal with the realities of these technologies, such as low breakdown voltages, lossy substrates, low-Q passives, long interconnect parasitics, and high-frequency coupling issues. As an example of complete system integration in silicon, this paper presents the first fully integrated 24-GHz eight-element phased array receiver in 0.18-/spl mu/m silicon-germanium and the first fully integrated 24-GHz four-element phased array transmitter with integrated power amplifiers in 0.18-/spl mu/m CMOS. The transmitter and receiver are capable of beam forming and can be used for communication, ranging, positioning, and sensing applications.

/pdf/integrated-phased-array-systems-in-silicon-2i0prw8slb.pdf

Hossein Hashemi

Papers

Concurrent multiband low-noise amplifiers-theory, design, and applications

A fully integrated 24-GHz eight-element phased-array receiver in silicon

A 24-GHz SiGe phased-array receiver-LO phase-shifting approach

A Monolithically Integrated Large-Scale Optical Phased Array in Silicon-on-Insulator CMOS

Integrated Phased Array Systems in Silicon