Author
Hsin-Hsing Liao
Bio: Hsin-Hsing Liao is an academic researcher. The author has contributed to research in topics: Microstrip & Monolithic microwave integrated circuit. The author has an hindex of 1, co-authored 1 publications receiving 104 citations.
Papers
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TL;DR: In this article, a set of W-band power amplifier (PA) modules using monolithic microwave integrated circuits (MMICs) have been developed for the local oscillators of the far-infrared and sub-millimeter telescope (FIRST).
Abstract: A set of W-band power amplifier (PA) modules using monolithic microwave integrated circuits (MMICs) have been developed for the local oscillators of the far-infrared and sub-millimeter telescope (FIRST). The MMIC PA chips include three driver and three PAs, designed using microstrip lines, and another two smaller driver amplifiers using coplanar waveguides, covering the entire W-band. The highest frequency PA, which covers 100-113 GHz, has a peak power of greater than 250 mW (25 dBm) at 105 GHz, which is the best output power performance for a monolithic amplifier above 100 GHz to date. These monolithic PA chips are fabricated using 0.1-/spl mu/m AlGaAs/InGaAs/GaAs pseudomorphic T-gate power high electron-mobility transistors on a 2-mil GaAs substrate. The module assembly and testing, together with the system applications, is also addressed in this paper.
105 citations
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TL;DR: Terahertz (THz) technology is one of emerging technologies that will change our life as mentioned in this paper, however, the realization of THz emitters and receivers is a challenge because the frequencies are too high for conventional electronics and the photon energies are too small for classical optics.
Abstract: Terahertz (THz) technology is one of emerging technologies that will change our life. A lot of attractive applications in security, medicine, biology, astronomy, and non-destructive materials testing have been demonstrated already. However, the realization of THz emitters and receivers is a challenge because the frequencies are too high for conventional electronics and the photon energies are too small for classical optics. As a result, THz radiation is resistant to the techniques commonly employed in these well established neighbouring bands.
310 citations
TL;DR: In this paper, the authors present an overview of solid-state integrated circuit amplifiers approaching terahertz frequencies based on the latest device technologies which have emerged in the past several years.
Abstract: We present an overview of solid-state integrated circuit amplifiers approaching terahertz frequencies based on the latest device technologies which have emerged in the past several years. Highlights include the best reported data from heterojunction bipolar transistor (HBT) circuits, high electron mobility transistor (HEMT) circuits, and metamorphic HEMT (mHEMT) amplifier circuits. We discuss packaging techniques for the various technologies in waveguide modules and describe the best reported noise figures measured in these technologies. A consequence of THz transistors, namely ultra-low-noise at cryogenic temperatures, will be explored and results presented. We also present a short review of power amplifier technologies for the THz regime. Finally, we discuss emerging materials for THz amplifiers into the next decade.
264 citations
TL;DR: In this article, the various technologies for terahertz sources are reviewed, and future trends are discussed, as well as a review of the current state-of-the-art.
Abstract: New and emerging terahertz technology applications make this a very exciting time for the scientists, engineers, and technologists in the field. New sensors and detectors have been the primary driving force behind the unprecedented progress in terahertz technology, but in the last decade extraordinary developments in terahertz sources have also occurred. Driven primarily by space based missions for Earth, planetary, and astrophysical science, frequency multiplied sources have dominated the field in recent years, at least in the 2-3 THz frequency range. More recently, over the past few years terahertz quantum cascade lasers (QCLs) have made tremendous strides, finding increasing applications in terahertz systems. Vacuum electronic devices and photonic sources are not far behind either. In this article, the various technologies for terahertz sources are reviewed, and future trends are discussed.
229 citations
TL;DR: The state-of-the-art of terahertz heterodyne receivers are reviewed in this paper, with a focus on front-end components such as mixers and local oscillators.
Abstract: The state-of-the art of terahertz heterodyne receivers are reviewed. Emphasis is placed on front-end components such as mixers and local oscillators. The back-end technology is described to a lesser extent. Recent developments, which are expected to have a major impact in the future, are also discussed.
179 citations
TL;DR: In this article, the authors report on the design and performance of a broadband, high-power 540-640-GHz fix-tuned balanced frequency tripler chip that utilizes four planar Schottky anodes.
Abstract: We report on the design and performance of a broad-band, high-power 540-640-GHz fix-tuned balanced frequency tripler chip that utilizes four planar Schottky anodes. The suspended strip-line circuit is fabricated with a 12-/spl mu/m-thick support frame and is mounted in a split waveguide block. The chip is supported by thick beam leads that are also used to provide precise RF grounding. At room temperature, the tripler delivers 0.9-1.8 mW across the band with an estimated efficiency of 4.5%-9%. When cooled to 120 K, the tripler provides 2.0-4.2 mW across the band with an estimated efficiency of 8%-12%.
148 citations