There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality.

Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

I and i

Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

Fast parallel algorithms for short-range molecular dynamics

다중혈관 관상동맥 환자에서 y-문합을 이용하여 양쪽 내흉동맥만을 사용한 우회술의 조기 성적

抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.

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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

http://sourcedb.igsnrr.cas.cn/zw/lw/201210/P020121022374509143420.pdf

The effects of the Qinghai–Tibet railway on heavy metals enrichment in soils

The ability to tailor the chemical composition and structure of a surface on the 1-100 nm length scale is important to researchers studying topics ranging from electronic conduction, to catalysis, to biological recognition in nanoscale systems. Dip-pen nanolithography (DPN) is a new scanning-probe based direct-write tool for generating such surface-patterned chemical functionality on the sub-100 nm length-scale, and it is a technique that is accessible to any researcher who can use an atomic force microscope. This article introduces DPN and reviews the rapid growth of the field of DPN-related research over the past few years. Topics covered range from the development of new classes of DPN-compatible chemistry, to experimental and theoretical advances in the understanding of the processes controlling tip-substrate ink transport, to the implementation of micro-electro-mechanical system (MEMS) based strategies for parallel DPN applications.

/pdf/the-evolution-of-dip-pen-nanolithography-h3t4gjccdq.pdf

The Evolution of Dip‐Pen Nanolithography.

In situ bottom-gated molybdenum disulfide (MoS2) field effect transistors (FETs) device characterization and in situ ultraviolet photoelectron spectroscopy and x-ray photoelectron spectroscopy measurements were combined to investigate the effect of surface modification layers of C60 and molybdenum trioxide (MoO3) on the electronic properties of single layer MoS2. It is found that C60 decoration keeps MoS2 FET performance intact due to the very weak interfacial interactions, making C60 as an ideal capping layer for MoS2 devices. In contrast, decorating MoO3 on MoS2 induces significant charge transfer at the MoS2/MoO3 interface and largely depletes the electron charge carriers in MoS2 FET devices.

Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers

Elemental two-dimensional (2D) materials have emerged as promising candidates for energy and catalysis applications due to their unique physical, chemical, and electronic properties. These materials are advantageous in offering massive surface-to-volume ratios, favorable transport properties, intriguing physicochemical properties, and confinement effects resulting from the 2D ultrathin structure. In this review, we focus on the recent advances in emerging energy and catalysis applications based on beyond-graphene elemental 2D materials. First, we briefly introduce the general classification, structure, and properties of elemental 2D materials and the new advances in material preparation. We then discuss various applications in energy harvesting and storage, including solar cells, piezoelectric and triboelectric nanogenerators, thermoelectric devices, batteries, and supercapacitors. We further discuss the explorations of beyond-graphene elemental 2D materials for electrocatalysis, photocatalysis, and heterogeneous catalysis. Finally, the challenges and perspectives for the future development of elemental 2D materials in energy and catalysis are discussed.

Emerging beyond-graphene elemental 2D materials for energy and catalysis applications.

Photomask repair and fabrication with use of direct-write nanolithography, including use of scanning probe microscopic tips for deposition of ink materials including solgel and metallic inks. Additive methods can be combined with substractive methods. Holes can be filled with nanostructures. Height of the nanostructure filling the hole can be controlled without losing control of the lateral dimensions of the nanostructure. Chrome-on-Glass masks can be used and fabricated, as well as more advanced masks including masks for nanoimprint nanolithography.

Hua Zhang

Papers

The effects of the Qinghai–Tibet railway on heavy metals enrichment in soils

The Evolution of Dip‐Pen Nanolithography.

Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers

Emerging beyond-graphene elemental 2D materials for energy and catalysis applications.

Nanometer-scale engineered structures, methods and apparatus for fabrication thereof, and applications to mask repair, enhancement, and fabrication