Hua Zhang

Bio: Hua Zhang is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Medicine & Graphene. The author has an hindex of 163, co-authored 1503 publications receiving 116769 citations. Previous affiliations of Hua Zhang include Shenzhen University & Zhengzhou University.

Conformally deposited NiO on a hierarchical carbon support for high-power and durable asymmetric supercapacitors

Abstract: Metal oxide based supercapacitors can provide much higher energy densities as compared with carbon-based ones. However, metal oxides usually suffer from low power densities together with poor cycle life, which is a big barrier for their practical applications. In this work, purposely confined NiO nanoparticles have been deposited uniformly on a three-dimensional graphite foam–carbon nanotube forest substrate, giving rise to a well-integrated free-standing electrode (GF–CNT@NiO) with strong synergetic effects generated from nickel oxide and the carbon support. The electrode with 57.6% mass content of NiO delivers a high specific capacity of 196.5 mA h g−1 and excellent cycling stability for 30000 cycles. By coupling with a graphene–CNT paper anode, an asymmetric supercapacitor (GF–CNT@NiO//G–CNT) is assembled, which demonstrates excellent cycling ability (only 18.3% of capacitance drop after 30000 cycles) and high power density (1.06–7.14 kW kg−1), suggesting its great promise for advanced supercapacitors.

Preparation of 1T′-Phase ReS2xSe2(1-x) (x = 0–1) Nanodots for Highly Efficient Electrocatalytic Hydrogen Evolution Reaction

Abstract: As a source of clean energy, a reliable hydrogen evolution reaction (HER) requires robust and highly efficient catalysts. Here, by combining chemical vapor transport and Li-intercalation, we have prepared a series of 1T′-phase ReS2xSe2(1-x) (x = 0–1) nanodots to achieve high-performance HER in acid medium. Among them, the 1T′-phase ReSSe nanodot exhibits the highest hydrogen evolution activity, with a Tafel slope of 50.1 mV dec–1 and a low overpotential of 84 mV at current density of 10 mA cm–2. The excellent hydrogen evolution activity is attributed to the optimal hydrogen absorption energy of the active site induced by the asymmetric S vacancy in the highly asymmetric 1T′ crystal structure.

Synergistic additive-mediated CVD growth and chemical modification of 2D materials.

Abstract: Research on 2D materials has recently become one of the hottest topics that has attracted broad interdisciplinary attention. 2D materials offer fascinating platforms for fundamental science and technological explorations at the nanometer scale and molecular level, and exhibit diverse potential applications for future advanced nano-photonics and electronics. The chemical vapor deposition (CVD) technique has shown great promise for producing high-quality 2D materials with superior electro-optical performance. However, it is difficult to synthesize continuous single-crystal 2D materials with large domain sizes and good uniformity due to the low vapor pressure of their precursors. It has been observed that the addition of selected synergistic additives to the CVD process under mild conditions can result in uniformly large-area and highly crystalline monolayer 2D materials with exceptional optical/electrical properties. Moreover, the 2D material-based devices chemically modified by synergistic additives can achieve superior performances compared to those previously reported. In this review, we compare several typical synergistic additive-mediated CVD growth processes of 2D materials, as well as their superior properties, and provide some perspectives and challenges for the future of this emerging research field.

I and i

Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

Fast parallel algorithms for short-range molecular dynamics

Abstract: Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

Abstract: Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.