H
Huanli Dong
Researcher at Chinese Academy of Sciences
Publications - 309
Citations - 18002
Huanli Dong is an academic researcher from Chinese Academy of Sciences. The author has contributed to research in topics: Organic semiconductor & Organic electronics. The author has an hindex of 56, co-authored 273 publications receiving 13713 citations. Previous affiliations of Huanli Dong include Beihang University & Capital Normal University.
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Semiconducting π-conjugated systems in field-effect transistors: a material odyssey of organic electronics.
TL;DR: The focus of this review will be on the performance analysis of π-conjugated systems in OFETs, a kind of device consisting of an organic semiconducting layer, a gate insulator layer, and three terminals that provide an important insight into the charge transport of ρconjugate systems.
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25th anniversary article: key points for high-mobility organic field-effect transistors.
TL;DR: In this review, the key points for development of high mobility OFETs are highlighted from aspects of molecular engineering, process engineering and interface engineering, and the importance of other factors, such as impurities and testing conditions is also addressed.
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Sulfonated Graphene for Persistent Aromatic Pollutant Management
TL;DR: A kind of sulfonated graphene (around 3 nm thick) with high dispersion properties in aqueous solution capable of absorbing naphthalene and 1-naphthol aromatic pollutants from aqueously solutions is introduced.
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Organic photoresponse materials and devices
TL;DR: It is expected that this systematic analysis of photoresponse materials and devices could be a guide for the better understanding of structure-property relationships of organic materials and provide key clues for the fabrication of high performance organic optoelectronic devices.
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Organic semiconductor crystals
TL;DR: This review provides a comprehensive overview of the molecular packing, morphology and charge transport features of organic semiconductor crystals, the control of crystallization for achieving high quality crystals and the device physics in the three main applications.