Author
I. Ilyashenko
Bio: I. Ilyashenko is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Semiconductor detector & Radiation hardening. The author has an hindex of 12, co-authored 26 publications receiving 893 citations.
Papers
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University of Hamburg1, Brunel University London2, University of Liverpool3, Fermilab4, Max Planck Society5, University of Perugia6, University of Glasgow7, Lancaster University8, Spanish National Research Council9, University of Ljubljana10, Ghent University11, King's College London12, Karlsruhe Institute of Technology13, Brookhaven National Laboratory14, STMicroelectronics15, University of California, Berkeley16, CERN17, Imperial College London18, Czech Technical University in Prague19, Université de Montréal20, National Academy of Sciences of Ukraine21, Tel Aviv University22, Kurchatov Institute23, Academy of Sciences of the Czech Republic24, SINTEF25, Royal Institute of Technology26, Micron Technology27, Charles University in Prague28, Technical University of Dortmund29
01 Jul 2001-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this paper, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing.
Abstract: The RD48 (ROSE) collaboration has succeeded to develop radiation hard silicon detectors, capable to withstand the harsh hadron fluences in the tracking areas of LHC experiments. In order to reach this objective, a defect engineering technique was employed resulting in the development of Oxygen enriched FZ silicon (DOFZ), ensuring the necessary O-enrichment of about 2×1017 O/cm3 in the normal detector processing. Systematic investigations have been carried out on various standard and oxygenated silicon diodes with neutron, proton and pion irradiation up to a fluence of 5×1014 cm−2 (1 MeV neutron equivalent). Major focus is on the changes of the effective doping concentration (depletion voltage). Other aspects (reverse current, charge collection) are covered too and the appreciable benefits obtained with DOFZ silicon in radiation tolerance for charged hadrons are outlined. The results are reliably described by the “Hamburg model”: its application to LHC experimental conditions is shown, demonstrating the superiority of the defect engineered silicon. Microscopic aspects of damage effects are also discussed, including differences due to charged and neutral hadron irradiation.
402 citations
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University of Hamburg1, Brunel University London2, University of Liverpool3, Fermilab4, Max Planck Society5, University of Perugia6, University of Glasgow7, Lancaster University8, Spanish National Research Council9, University of Ljubljana10, Ghent University11, King's College London12, Karlsruhe Institute of Technology13, Brookhaven National Laboratory14, STMicroelectronics15, University of California, Berkeley16, CERN17, Imperial College London18, Czech Technical University in Prague19, Charles University in Prague20, National Academy of Sciences of Ukraine21, Université de Montréal22, Tel Aviv University23, Kurchatov Institute24, Academy of Sciences of the Czech Republic25, SINTEF26, Royal Institute of Technology27, Micron Technology28, Technical University of Dortmund29
01 Jun 2001-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: In this paper, the authors summarized the final results obtained by the RD48 collaboration, focusing on the more practical aspects directly relevant for LHC applications, including the changes of the effective doping concentration (depletion voltage) and the dependence of radiation effects on fluence, temperature and operational time.
Abstract: This report summarises the final results obtained by the RD48 collaboration. The emphasis is on the more practical aspects directly relevant for LHC applications. The report is based on the comprehensive survey given in the 1999 status report (RD48 3rd Status Report, CERN/LHCC 2000-009, December 1999), a recent conference report (Lindstrom et al. (RD48), and some latest experimental results. Additional data have been reported in the last ROSE workshop (5th ROSE workshop, CERN, CERN/LEB 2000-005). A compilation of all RD48 internal reports and a full publication list can be found on the RD48 homepage (http://cern.ch/RD48/). The success of the oxygen enrichment of FZ-silicon as a highly powerful defect engineering technique and its optimisation with various commercial manufacturers are reported. The focus is on the changes of the effective doping concentration (depletion voltage). The RD48 model for the dependence of radiation effects on fluence, temperature and operational time is verified; projections to operational scenarios for main LHC experiments demonstrate vital benefits. Progress in the microscopic understanding of damage effects as well as the application of defect kinetics models and device modelling for the prediction of the macroscopic behaviour has also been achieved but will not be covered in detail.
108 citations
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University College London1, Lawrence Berkeley National Laboratory2, TRIUMF3, Science and Technology Facilities Council4, University of Glasgow5, CERN6, Queen Mary University of London7, University of Cambridge8, Petersburg Nuclear Physics Institute9, University of Sheffield10, University of Oslo11, Czech Technical University in Prague12, Indiana University13, Centre national de la recherche scientifique14, Santa Cruz Institute for Particle Physics15, University of Genoa16, University of Milan17, Joint Institute for Nuclear Research18, Aix-Marseille University19, University of Liverpool20, University of Udine21, Laboratoire d'Annecy-le-Vieux de physique des particules22, University of Oxford23, University of Geneva24, University of Bergen25, Polish Academy of Sciences26
TL;DR: In this paper, the authors describe an evaporative system used to cool the silicon detector structures of the inner detector sub-detectors of the ATLAS experiment at the CERN Large Hadron Collider.
Abstract: This paper describes the evaporative system used to cool the silicon detector structures of the inner detector sub-detectors of the ATLAS experiment at the CERN Large Hadron Collider. The motivation for an evaporative system, its design and construction are discussed. In detail the particular requirements of the ATLAS inner detector, technical choices and the qualification and manufacture of final components are addressed. Finally results of initial operational tests are reported. Although the entire system described, the paper focuses on the on-detector aspects. Details of the evaporative cooling plant will be discussed elsewhere.
80 citations
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01 Apr 2005-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors are reviewed and discussed in this work as mentioned in this paper, which includes the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors.
Abstract: An option of increasing the luminosity of the Large Hadron Collider (LHC) at CERN to 1035 cm−2 s−1 has been envisaged to extend the physics reach of the machine. An efficient tracking down to a few centimetres from the interaction point will be required to exploit the physics potential of the upgraded LHC. As a consequence, the semiconductor detectors close to the interaction region will receive severe doses of fast hadron irradiation and the inner tracker detectors will need to survive fast hadron fluences of up to above 1016 cm−2. The CERN-RD50 project “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” has been established in 2002 to explore detector materials and technologies that will allow to operate devices up to, or beyond, this limit. The strategies followed by RD50 to enhance the radiation tolerance include the development of new or defect engineered detector materials (SiC, GaN, Czochralski and epitaxial silicon, oxygen enriched Float Zone silicon), the improvement of present detector designs and the understanding of the microscopic defects causing the degradation of the irradiated detectors. The latest advancements within the RD50 collaboration on radiation hard semiconductor detectors will be reviewed and discussed in this work.
57 citations
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01 Jul 2005-Nuclear Instruments & Methods in Physics Research Section A-accelerators Spectrometers Detectors and Associated Equipment
TL;DR: The CERN RD50 collaboration as mentioned in this paper is working on the development of semiconductor sensors matching the requirements of the SLHC experiments, which includes 3D, Semi-3D and thin detectors.
Abstract: The envisaged upgrade of the Large Hadron Collider (LHC) at CERN towards the Super-LHC (SLHC) with a 10 times increased luminosity of 1035 cm−2 s−1 will present severe challenges for the tracking detectors of the SLHC experiments. Unprecedented high radiation levels and track densities and a reduced bunch crossing time in the order of 10 ns as well as the need for cost effective detectors have called for an intensive R&D program. The CERN RD50 collaboration “Development of Radiation Hard Semiconductor Devices for Very High Luminosity Colliders” is working on the development of semiconductor sensors matching the requirements of the SLHC. Sensors based on defect engineered silicon like Czochralski, epitaxial and oxygen enriched silicon have been developed. With 3D, Semi-3D and thin detectors new detector concepts have been evaluated and a study on the use of standard and oxygen enriched p-type silicon detectors revealed a promising approach for radiation tolerant cost effective devices. These and other most recent advancements of the RD50 collaboration are presented.
40 citations
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TL;DR: The Compact Muon Solenoid (CMS) detector at the Large Hadron Collider (LHC) at CERN as mentioned in this paper was designed to study proton-proton (and lead-lead) collisions at a centre-of-mass energy of 14 TeV (5.5 TeV nucleon-nucleon) and at luminosities up to 10(34)cm(-2)s(-1)
Abstract: The Compact Muon Solenoid (CMS) detector is described. The detector operates at the Large Hadron Collider (LHC) at CERN. It was conceived to study proton-proton (and lead-lead) collisions at a centre-of-mass energy of 14 TeV (5.5 TeV nucleon-nucleon) and at luminosities up to 10(34)cm(-2)s(-1) (10(27)cm(-2)s(-1)). At the core of the CMS detector sits a high-magnetic-field and large-bore superconducting solenoid surrounding an all-silicon pixel and strip tracker, a lead-tungstate scintillating-crystals electromagnetic calorimeter, and a brass-scintillator sampling hadron calorimeter. The iron yoke of the flux-return is instrumented with four stations of muon detectors covering most of the 4 pi solid angle. Forward sampling calorimeters extend the pseudo-rapidity coverage to high values (vertical bar eta vertical bar <= 5) assuring very good hermeticity. The overall dimensions of the CMS detector are a length of 21.6 m, a diameter of 14.6 m and a total weight of 12500 t.
5,193 citations
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23 Feb 2020
TL;DR: The ATLAS detector as installed in its experimental cavern at point 1 at CERN is described in this paper, where a brief overview of the expected performance of the detector when the Large Hadron Collider begins operation is also presented.
Abstract: The ATLAS detector as installed in its experimental cavern at point 1 at CERN is described in this paper. A brief overview of the expected performance of the detector when the Large Hadron Collider begins operation is also presented.
3,111 citations
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TL;DR: In this article, the silicon pixel tracking system for the ATLAS experiment at the Large Hadron Collider is described and the performance requirements are summarized and detailed descriptions of the pixel detector electronics and the silicon sensors are given.
Abstract: The silicon pixel tracking system for the ATLAS experiment at the Large Hadron Collider is described and the performance requirements are summarized. Detailed descriptions of the pixel detector electronics and the silicon sensors are given. The design, fabrication, assembly and performance of the pixel detector modules are presented. Data obtained from test beams as well as studies using cosmic rays are also discussed.
709 citations
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TL;DR: A historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices to provide a guide to displacement damage literature and to offer critical comments regarding that literature in an attempt to identify key findings.
Abstract: This paper provides a historical review of the literature on the effects of radiation-induced displacement damage in semiconductor materials and devices. Emphasis is placed on effects in technologically important bulk silicon and silicon devices. The primary goals are to provide a guide to displacement damage literature, to offer critical comments regarding that literature in an attempt to identify key findings, to describe how the understanding of displacement damage mechanisms and effects has evolved, and to note current trends. Selected tutorial elements are included as an aid to presenting the review information more clearly and to provide a frame of reference for the terminology used. The primary approach employed is to present information qualitatively while leaving quantitative details to the cited references. A bibliography of key displacement-damage information sources is also provided.
607 citations
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TL;DR: In this paper, a comprehensive review of the properties of epitaxial 4H silicon carbide polytype (4H-SiC) is presented, with particular emphasis on those aspects of this material related to room, high-temperature and harsh environment ionizing radiation detector operation.
Abstract: We present a comprehensive review of the properties of the epitaxial 4H silicon carbide polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to room, high-temperature and harsh environment ionizing radiation detector operation. A review of the characterization methods and electrical contacting issues and how these are related to detector performance is presented. The most recent data on charge transport parameters across the Schottky barrier and how these are related to radiation spectrometer performance are presented. Experimental results on pixel detectors having equivalent noise energies of 144 eV FWHM (7.8 electrons rms) and 196 eV FWHM at +27 °C and +100 °C, respectively, are reported. Results of studying the radiation resistance of 4H–SiC are analysed. The data on the ionization energies, capture cross section, deep-level centre concentrations and their plausible structures formed in SiC as a result of irradiation with various particles are reviewed. The emphasis is placed on the study of the 1 MeV neutron irradiation, since these thermal particles seem to play the main role in the detector degradation. An accurate electrical characterization of the induced deep-level centres by means of PICTS technique has allowed one to identify which play the main role in the detector degradation.
247 citations