Author
I. N. Arsent’ev
Other affiliations: Voronezh State University, Russian Ministry of the Emergency Situations
Bio: I. N. Arsent’ev is an academic researcher from Russian Academy of Sciences. The author has contributed to research in topics: Laser & Diode. The author has an hindex of 7, co-authored 26 publications receiving 104 citations. Previous affiliations of I. N. Arsent’ev include Voronezh State University & Russian Ministry of the Emergency Situations.
Papers
More filters
TL;DR: In this article, the growth of MOCVD-hydride epitaxial heterostructures based on ternary solid solutions AlxGa1−xAs heavily doped with phosphorus and silicon has been studied using high-resolution X-ray diffraction and Xray microanalysis.
Abstract: The growth of MOCVD-hydride epitaxial heterostructures based on ternary solid solutions AlxGa1−xAs heavily doped with phosphorus and silicon has been studied using high-resolution X-ray diffraction and X-ray microanalysis. The prepared epitaxial films are five-component solid solutions (AsxGa1−xAsyP1 − y)1 − zSiz.
16 citations
TL;DR: In this article, the spectral and light-current characteristics of separate-confinement GaAs/InP and InGaAsP/INP alloys were studied at high excitation levels (up to 80 kA/cm2) in pulse operation (100 ns, 10 kHz).
Abstract: Spectral and light-current characteristics of separate-confinement lasers that are based on InAl-GaAs/InP and InGaAsP/InP alloys and emit in the wavelength range of 1.5–1.8 μm are studied at high excitation levels (up to 80 kA/cm2) in pulse operation (100 ns, 10 kHz). It is shown that the peak intensity in the stimulated-emission spectrum saturates as the pump current is increased. Further increase in the emitted power is attained owing to the emission-spectrum broadening to shorter wavelengths, similar to lasers on the GaAs substrates (λ = 1.04 μm). It is established experimentally that the broadening of the stimulated-emission spectrum to shorter wavelengths is caused by an increase in the threshold current and by an increase in the charge-carrier concentration in the active region. This concentration increases by a factor of 6–7 beyond the lasing threshold and can be as high as 1019 cm−3 in pulse operation. It is shown that saturation of the light-current characteristics in pulse operation takes place in the InAlGaAs/InP and InGaAsP/InP lasers as the pump current is increased. It is shown experimentally that there is a correlation between saturation of the light-current characteristic and an increase in the threshold current in the active region. An increase in the charge-carrier concentration and gradual filling of the active region and waveguide layers with electrons are observed as the pump current is increased; stimulated emission from the waveguide is observed at high pump currents.
14 citations
TL;DR: The characteristic features of the formation kinetics of In2S3 layers on indium arsenide substrates by heterovalent substitution were studied in this paper, where activation energies of two steps in this process were separated and determined.
Abstract: The characteristic features of the formation kinetics of In2S3 layers on indium arsenide substrates by heterovalent substitution are studied. The activation energies of two steps in this process are separated and determined. The variation of the position of the Fermi level on an InAs surface during treatment in sulfur vapor is recorded by measuring the thermodynamic work function using the Kelvin probe method.
12 citations
TL;DR: In this paper, the photoluminescence spectra of heavily doped heterostructures based on (Al¯¯¯¯ x� Ga1 − x¯¯¯¯ As)1 − y Si y solid solutions exhibit quenching of the main exciton bands.
Abstract: It has been established that the photoluminescence spectra of heavily doped heterostructures based on Al
x
Ga1 − x
As)1 − y
Si
y
solid solutions exhibit quenching of the main exciton bands of Al
x
Ga1 − x
As ternary solid solutions and appearance of other maxima. The quenching of the main exciton bands can be associated both with the DX-center formation and with the change in the character of the band structure of (Al
x
Ga1 − x
As)1 − y
Si
y
quaternary solid solutions.
10 citations
TL;DR: In this article, structural and optical properties of two-and three-layer epitaxial heterostructures containing GaInP/Ga petertodd quaternary alloy layers were studied.
Abstract: Structural and optical properties of two- and three-layer epitaxial heterostructures containing GaInP/Ga
x
In1 − x
As
y
P1 − y
quaternary alloy layers were studied. Domain formation due to spinodal decomposition of the quaternary alloy was detected in three-layer heterostructures. As a result, an additional long-wavelength band appears in the photoluminescence spectra, and an additional doublet of the
% MathType!MTEF!2!1!+-
% feaagaart1ev2aaatCvAUfKttLearuqr1ngBPrgarmWu51MyVXgatC
% vAUfeBSjuyZL2yd9gzLbvyNv2CaeHbd9wDYLwzYbItLDharyavP1wz
% ZbItLDhis9wBH5garqqtubsr4rNCHbGeaGqiVu0Je9sqqrpepC0xbb
% L8F4rqqrFfpeea0xe9Lq-Jc9vqaqpepm0xbba9pwe9Q8fs0-yqaqpe
% pae9pg0FirpepeKkFr0xfr-xfr-xb9adbaqaaeGaciGaaiaabeqaam
% aaeaqbaaGcbaaceaGaa83qaiaa-vhacqWGlbWsdaWgaaWcbaaccaGa
% mair+f7aHnacas0gaaadbGaGejadaseIXaqmcWaGejilaWIamairik
% daYaqajairaaWcbeaaaaa!480D!
$$
CuK_{\alpha _{1,2} }
$$
line appears in X-ray diffraction patterns of the (006) line. The domain composition was determined on the basis of Vegard’s law and the Kouphal equation.
8 citations
Cited by
More filters
TL;DR: A short historical review of the physics and technology of heterostructure lasers based on double heterostructures is described in this paper, and future trends in the development of these new types of heterstructures are discussed.
Abstract: A short historical review of the physics and technology of heterostructure lasers based on double heterostructures is described. Recent progress in quantum dot laser structures and future trends in the development of the physics and technology of these new types of heterostructures are discussed.
87 citations
TL;DR: In this paper, the current state of the field of semiconductor lasers operating in the spectral range near 1.3 μm and with an active region represented by an array of self-organized quantum dots is reviewed.
Abstract: The current state of the field of semiconductor lasers operating in the spectral range near 1.3 μm and with an active region represented by an array of self-organized quantum dots is reviewed. The threshold and temperature characteristics of such lasers are considered; the problems of overcoming the gain saturation and of an increase in both the differential efficiency and emitted power are discussed. Data on the response speed under conditions of direct modulation and on the characteristics of lasers operating with mode synchronization are generalized. Nonlinear gain saturation, the factor of spectral line broadening, and the formation of broad gain and lasing spectra are discussed.
54 citations
TL;DR: The early history of semiconductor heterostructures and their applications in different electronic devices is described in this paper, which contains a short historical review of the physics, technology of preparation and applications of quantum wells and superlattices.
Abstract: The early history of semiconductor heterostructures and their applications in different electronic devices is described. The article also contains a short historical review of the physics, technology of preparation and applications of quantum wells and superlattices. Recent progress in quantum wires and especially quantum dots structures and future trends and perspectives of these new types of heterostructures are discussed.
34 citations
TL;DR: The novel ZnS@In2S3 core@shell hollow nanospheres fabricated by a facile refluxing method for the first time showed significantly enhanced catalytic performance for effective separation of photo-generated charges and would meet the demands for the control of persistent organic pollutant (POPs) in the atmospheric environment.
Abstract: In this study, novel ZnS@In2S3 core@shell hollow nanospheres were fabricated by a facile refluxing method for the first time, and the formation mechanism of hollow structure with interior architecture was discussed based on ion-exchange Ostwald ripening. As the photocatalytic material for degradation of gaseous o-Dichlorobenzene (o-DCB), the as-synthesized core@shell hollow nanospheres were found to show significantly enhanced catalytic performance for effective separation of photo-generated charges. Moreover, the mechanisms of enhanced activity were elucidated by band alignment and unique configuration. Such photocatalyst would meet the demands for the control of persistent organic pollutant (POPs) in the atmospheric environment.
33 citations
TL;DR: In this article, the authors used ion plasma sputtering to obtain nano-sized Al2O3 strips on the surface of nanoporous silicon surface as well as fundamental investigations of structural, optical and morphological properties of the materials.
29 citations