I. P. Smorchkova

TL;DR: In this paper, a novel heterojunction AlGaN/AlN/GaN high-electron mobility transistor (HEMT) is discussed, where the insertion of the very thin AlN interfacial layer (/spl sim/1 nm) maintains high mobility at high sheet charge densities by increasing the effective /spl Delta/E/sub C/ and decreasing alloy scattering.

TL;DR: In this article, the formation of the 2DEG in unintentionally doped AlxGa1−xN/GaN (x⩽0.31) heterostructures grown by rf plasma-assisted molecular-beam epitaxy is investigated.

TL;DR: In this article, an extensive study of the two-dimensional electron gas (2DEG) structures containing AlN layers was conducted and it was shown that the presence of large polarization fields in the AlN barrier layer in AlN/GaN heterostructures results in high values of the 2DEG sheet density of up to 3.6×1013 cm−2.

TL;DR: In this paper, a group III nitride based high electron mobility transistor (HEMT) is proposed that provides improved high frequency performance, which includes a GaN buffer layer with an AlyGa1-yN (y=1 or y 1) layer on the Gan buffer layer.

TL;DR: In this article, the concept and experimental realization of polarization-induced bulk electron doping in III-V nitride semiconductors was presented, by exploiting the large polarization charges in the 3-D electron slabs.