Igor Zhirkov

Bio: Igor Zhirkov is an academic researcher from Linköping University. The author has contributed to research in topics: Cathode & Plasma. The author has an hindex of 13, co-authored 40 publications receiving 397 citations. Previous affiliations of Igor Zhirkov include Université libre de Bruxelles & Tomsk State University of Control Systems and Radio-electronics.

Effect of Ti-Al cathode composition on plasma generation and plasma transport in direct current vacuum arc

Abstract: DC arc plasma from Ti, Al, and Ti1-xAlx (x = 0.16, 0.25, 0.50, and 0.70) compound cathodes was characterized with respect to plasma chemistry and charge-state-resolved ion energy. Scanning electron microscopy, X-ray diffraction, and Energy-dispersive X-ray spectroscopy of the deposited films and the cathode surfaces were used for exploring the correlation between cathode-, plasma-, and film composition. Experimental work was performed at a base pressure of 10−6 Torr, to exclude plasma-gas interaction. The plasma ion composition showed a reduction of Al of approximately 5 at. % compared to the cathode composition, while deposited films were in accordance with the cathode stoichiometry. This may be explained by presence of neutrals in the plasma/vapour phase. The average ion charge states (Ti = 2.2, Al = 1.65) were consistent with reference data for elemental cathodes, and approximately independent on the cathode composition. On the contrary, the width of the ion energy distributions (IEDs) were drastically...

Ion velocities in direct current arc plasma generated from compound cathodes

Abstract: Arc plasma from Ti-C, Ti-Al, and Ti-Si cathodes was characterized with respect to charge-state-resolved ion energy. The evaluated peak velocities of different ion species in plasma generated from a compound cathode were found to be equal and independent on ion mass. Therefore, measured difference in kinetic energies can be inferred from the difference in ion mass, with no dependence on ion charge state. The latter is consistent with previous work. These findings can be explained by plasma quasineutrality, ion acceleration by pressure gradients, and electron-ion coupling. Increasing the C concentration in Ti-C cathodes resulted in increasing average and peak ion energies for all ion species. This effect can be explained by the “cohesive energy rule,” where material and phases of higher cohesive energy generally result in increasing energies (velocities). This is also consistent with the here obtained peak velocities around 1.37, 1.42, and 1.55 (104 m/s) for ions from Ti0.84Al0.16, Ti0.90Si0.10, and Ti0.90C0.10 cathodes, respectively.

Controlling the boron-to-titanium ratio in magnetron-sputter-deposited TiBx thin films

Abstract: Magnetron sputter-deposited TiBx films grown from TiB2 targets are typically highly overstoichiometric with x ranging from 3.5 to 2.4 due to differences in Ti and B preferential ejection angles and gas-phase scattering during transport between the target and the substrate. The authors show that the use of highly magnetically unbalanced magnetron sputtering leads to selective ionization of sputter-ejected Ti atoms which are steered via an external magnetic field to the film, thus establishing control of the B/Ti ratio with the ability to obtain stoichiometric TiB2 films over a wide range in Ar sputtering pressures.

Microstructure and materials properties of understoichiometric TiBx thin films grown by HiPIMS

Abstract: TiBx thin films with a B content of 1.43 ≤ x ≤ 2.70 were synthesized using high-power impulse magnetron sputtering (HiPIMS) and direct-current magnetron sputtering (DCMS). HiPIMS allows compositions ranging from understoichiometric to overstoichiometric dense TiBx thin films with a B/Ti ratio between 1.43 and 2.06, while DCMS yields overstoichiometric TiBx films with a B/Ti ratio ranging from 2.20 to 2.70. Excess B in overstoichiometric TiBx thin films from DCMS results in a hardness up to 37.7 ± 0.8 GPa, attributed to the formation of an amorphous B-rich tissue phase interlacing stoichiometric TiB2 columnar structures. We furthermore show that understoichiometric TiB1.43 thin films synthesized by HiPIMS, where the deficiency of B is found to be accommodated by Ti-rich planar defects, exhibit a superior hardness of 43.9 ± 0.9 GPa. The apparent fracture toughness and thermal conductivity of understoichiometric TiB1.43 HiPIMS films are 4.2 ± 0.1 MPa√m and 2.46 ± 0.22 W/(m·K), respectively, as compared to corresponding values for overstoichiometric TiB2.70 DCMS film samples of 3.1 ± 0.1 MPa√m and 4.52 ± 0.45 W/(m·K). This work increases the fundamental understanding of understoichiometric TiBx thin films and their materials properties, and shows that understoichiometric films have properties matching or going beyond those with excess B.

Effect of cathode composition and nitrogen pressure on macroparticle generation and type of arc discharge in a DC arc source with Ti–Al compound cathodes

Abstract: Thin films deposited with unfiltered DC arc plasma from Ti, Ti 0.75 Al 0.25 , Ti 0.50 Al 0.50 , Ti 0.30 Al 0.70 , and Al cathodes were characterized with a scanning electron microscope for quantification of extent of macroparticle incorporation. Depositions were performed in N 2 atmosphere in the pressure range from 10 − 6 Torr up to 3 · 10 − 2 Torr, and the formation of cathode surface nitride contamination was identified from X-ray diffraction analysis. Visual observation and photographic fixation of the arc spot behavior was simultaneously performed. A reduction in macroparticle generation with decreasing Al content and increasing N 2 pressure was demonstrated. A correlated transformation of the arc from type 2 to the type 1 was visually detected and found to be a function of N 2 pressure and at% of Al in the cathode. For the Ti cathode, no arc transformation was detected. These observations can be explained by a comparatively high electrical resistivity and high melting point of Al rich surface nitrides, promoting an arc transformation and a reduction in macroparticle generation.

Assessing the performance of recent density functionals for bulk solids

Abstract: We assess the performance of recent density functionals for the exchange-correlation energy of a nonmolecular solid, by applying accurate calculations with the GAUSSIAN, BAND, and VASP codes to a test set of 24 solid metals and nonmetals. The functionals tested are the modified Perdew-Burke-Ernzerhof generalized gradient approximation PBEsol GGA, the second-order GGA SOGGA, and the Armiento-Mattsson 2005 AM05 GGA. For completeness, we also test more standard functionals: the local density approximation, the original PBE GGA, and the Tao-Perdew-Staroverov-Scuseria meta-GGA. We find that the recent density functionals for solids reach a high accuracy for bulk properties lattice constant and bulk modulus. For the cohesive energy, PBE is better than PBEsol overall, as expected, but PBEsol is actually better for the alkali metals and alkali halides. For fair comparison of calculated and experimental results, we consider the zeropoint phonon and finite-temperature effects ignored by many workers. We show how GAUSSIAN basis sets and inaccurate experimental reference data may affect the rating of the quality of the functionals. The results show that PBEsol and AM05 perform somewhat differently from each other for alkali metal, alkaline-earth metal, and alkali halide crystals where the maximum value of the reduced density gradient is about 2, but perform very similarly for most of the other solids where it is often about 1. Our explanation for this is consistent with the importance of exchange-correlation nonlocality in regions of core-valence overlap.

A review comparing cathodic arcs and high power impulse magnetron sputtering (HiPIMS)

Abstract: High power impulse magnetron sputtering (HiPIMS) has been in the center of attention over the last years as it is an emerging physical vapor deposition (PVD) technology that combines advantages of magnetron sputtering with various forms of energetic deposition of films such as ion plating and cathodic arc plasma deposition. It should not come at a surprise that many extension and variations of HiPIMS make use, intentionally or unintentionally, of previously discovered approaches to film processing such as substrate surface preparation by metal ion sputtering and phased biasing for film texture and stress control. Therefore, in this review, an overview is given on some historical developments and features of cathodic arc and HiPIMS plasmas, showing commonalities and differences. To limit the scope, emphasis is put on plasma properties, as opposed to surveying the vast literature on specific film materials and their properties.

A structure zone diagram including plasma based deposition and ion etching - eScholarship

Abstract: An extended structure zone diagram is proposed that includes energetic deposition, characterized by a large flux of ions typical for deposition by filtered cathodic arcs and high power impulse magnetron sputtering. The axes are comprised of a generalized homologous temperature, the normalized kinetic energy flux, and the net film thickness, which can be negative due to ion etching. It is stressed that the number of primary physical parameters affecting growth by far exceeds the number of available axes in such a diagram and therefore it can only provide an approximate and simplified illustration of the growth condition?structure relationships.

Review of Growth Defects in Thin Films Prepared by PVD Techniques

Abstract: The paper summarizes current knowledge of growth defects in physical vapor deposition (PVD) coatings. A detailed historical overview is followed by a description of the types and evolution of growth defects. Growth defects are microscopic imperfections in the coating microstructure. They are most commonly formed by overgrowing of the topographical imperfections (pits, asperities) on the substrate surface or the foreign particles of different origins (dust, debris, flakes). Such foreign particles are not only those that remain on the substrate surface after wet cleaning procedure, but also the ones that are generated during ion etching and deposition processes. Although the origin of seed particles from external pretreatment of substrate is similar to all PVD coatings, the influence of ion etching and deposition techniques is rather different. Therefore, special emphasis is given on the description of the processes that take place during ion etching of substrates and the deposition of coating. The effect of growth defects on the functional properties of PVD coatings is described in the last section. How defects affect the quality of optical coatings, thin layers for semiconductor devices, as well as wear, corrosion, and oxidation resistant coatings is explained. The effect of growth defects on the permeation and wettability of the coatings is also shortly described.

Fore-vacuum plasma-cathode electron sources

Abstract: This paper presents a review of physical principles, design, and performances of plasma-cathode direct current (dc) electron beam guns operated in so called fore-vacuum pressure (1–15 Pa). That operation pressure range was not reached before for any kind of electron sources. A number of unique parameters of the e-beam were obtained, such as electron energy (up to 25 kV), dc beam current (up 0.5 A), and total beam power (up to 7 kW). For electron beam generation at these relatively high pressures, the following special features are important: high probability of electrical breakdown within the accelerating gap, a strong influence of back-streaming ions on both the emission electrode and the emitting plasma, generation of secondary plasma in the beam propagation region, and intense beam-plasma interactions that lead in turn to broadening of the beam energy spectrum and beam defocusing. Yet other unique peculiarities can occur for the case of ribbon electron beams, having to do with local maxima in the lateral beam current density distribution. The construction details of several plasma-cathode electron sources and some specific applications are also presented.