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Ingrid De Wolf
Researcher at Katholieke Universiteit Leuven
Publications - 199
Citations - 4141
Ingrid De Wolf is an academic researcher from Katholieke Universiteit Leuven. The author has contributed to research in topics: Stress (mechanics) & Raman spectroscopy. The author has an hindex of 25, co-authored 199 publications receiving 3815 citations. Previous affiliations of Ingrid De Wolf include University of Copenhagen Faculty of Science & IMEC.
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Micro-Raman spectroscopy to study local mechanical stress in silicon integrated circuits
TL;DR: In this article, the theoretical background of Raman spectroscopy, with special attention to its sensitivity for mechanical stress, is discussed, and practical information is given for the application of this technique to stress measurements in silicon integrated circuits.
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Stress measurements in silicon devices through Raman spectroscopy: Bridging the gap between theory and experiment
TL;DR: In this paper, different steps that have to be taken in order to derive information about local mechanical stress in silicon using micro-Raman spectroscopy experiments, including theoretical and experimental aspects, are discussed.
Journal ArticleDOI
A comprehensive model to predict the charging and reliability of capacitive RF MEMS switches
TL;DR: In this article, the authors present an improved analytical model that enables us to calculate and understand the effect of insulator charging on the behavior of capacitive RF MEMS switches, and to describe the way they fail, and their reliability.
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Stress measurements in Si microelectronics devices using Raman spectroscopy
TL;DR: In this paper, the application of micro-Raman spectroscopy for the measurement of local stress in silicon microelectronics samples is discussed, and the practical issues of concern for local stress measurements using micro-Ramans Spectroscopy are dealt with.
Proceedings ArticleDOI
Fabrication and reliability testing of Ti/TiN heaters
TL;DR: In this paper, the authors present a new material for highly resistive heaters: thin Ti/TiN layers, i.e. 50-100 micro-Ohn-cm.