Isabella Rossetto

TL;DR: In this paper, an extensive investigation of the trap with activation energy equal to 0.6 eV was performed on AlGaN/GaN HEMTs with increasing concentration of iron doping in the buffer.

TL;DR: In this paper, the authors demonstrate the time-dependent failure of GaN-on-Si power high-electron-mobility transistors with p-GaN gate, submitted to a forward gate stress.

TL;DR: In this paper, the negative threshold voltage instability in GaN-on-Si metal-insulator-semiconductor high electron mobility transistors with partially recessed AlGaN was investigated.

TL;DR: In this paper, the authors review the parasitic mechanisms that affect the performance of GaN-on-Si HEMTs and describe the following relevant processes: (i) trapping of electrons in the buffer, induced by off-state operation; (ii) trapping hot electrons, which is promoted by semi-on state operation; and (iii) trapping, in the gate insulator, favored by the exposure to positive gate bias.

TL;DR: In this paper, a detailed description of trap levels located in the gate-drain surface, and in the region under the gate of AlGaN/GaN HEMTs is presented.