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Isabelle Berbezier

Bio: Isabelle Berbezier is an academic researcher from Aix-Marseille University. The author has contributed to research in topics: Silicon & Molecular beam epitaxy. The author has an hindex of 29, co-authored 181 publications receiving 3016 citations. Previous affiliations of Isabelle Berbezier include Chesapeake Regional Medical Center & Orange S.A..


Papers
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TL;DR: In this article, the authors present a review of theoretical concepts and experimental results on the spontaneous formation and self-organization of SiGe quantum dots on silicon substrates, including morphological, structural and compositional properties.

183 citations

Journal ArticleDOI
TL;DR: In this article, a combination of focused ion beam (FIB) prepatterned Si(001) substrates and self-assembled Ge quantum dots (QDs) leads to the precise placement of QDs.
Abstract: One of the major challenges for the reliable use of self-organization phenomena for device applications is to accurately position quantum dots on the surface. A promising way to get ordered dots is to use prepatterned substrates. We show that a combination of focused ion beam (FIB) prepatterned Si(001) substrates and self-assembled Ge quantum dots (QDs) leads to the precise placement of QDs. The technological advantages of this method are to control the Ge dots size and location, and to scale down the interdots distance to ∼20nm. Regarding more fundamental aspects, the accurate control of nanopatterns characteristics allows us to investigate the influence of various experimental parameters on QDs formation. The process proposed consists mainly of three steps: (1) FIB nanopatterning; (2) ex situ cleaning of the FIB-patterned substrate in order to fully remove the Ga contamination before introduction into the molecular beam epitaxy (MBE) chamber; and (3) Ge deposition by solid source MBE. After optimization...

102 citations

Journal ArticleDOI
06 Nov 2014-ACS Nano
TL;DR: The capabilities of a dewetting-based process, independent of the sample size, to fabricate Si-based resonators over large scales starting from commercial silicon-on-insulator (SOI) substrates are reported.
Abstract: Subwavelength-sized dielectric Mie resonators have recently emerged as a promising photonic platform, as they combine the advantages of dielectric microstructures and metallic nanoparticles supporting surface plasmon polaritons. Here, we report the capabilities of a dewetting-based process, independent of the sample size, to fabricate Si-based resonators over large scales starting from commercial silicon-on-insulator (SOI) substrates. Spontaneous dewetting is shown to allow the production of monocrystalline Mie-resonators that feature two resonant modes in the visible spectrum, as observed in confocal scattering spectroscopy. Homogeneous scattering responses and improved spatial ordering of the Si-based resonators are observed when dewetting is assisted by electron beam lithography. Finally, exploiting different thermal agglomeration regimes, we highlight the versatility of this technique, which, when assisted by focused ion beam nanopatterning, produces monocrystalline nanocrystals with ad hoc size, posi...

94 citations

Journal ArticleDOI
TL;DR: This work frames complex nanoarchitectures of monocrystalline silicon on insulator with unprecedented precision and reproducibility over large scales via templated dewetting of thin SOI, and allows the novel possibility of transferring these Si-based patterns on different materials, which do not usually undergo deWetting, offering great potential also for microfluidic or sensing applications.
Abstract: Dewetting is a ubiquitous phenomenon in nature; many different thin films of organic and inorganic substances (such as liquids, polymers, metals, and semiconductors) share this shape instability driven by surface tension and mass transport. Via templated solid-state dewetting, we frame complex nanoarchitectures of monocrystalline silicon on insulator with unprecedented precision and reproducibility over large scales. Phase-field simulations reveal the dominant role of surface diffusion as a driving force for dewetting and provide a predictive tool to further engineer this hybrid top-down/bottom-up self-assembly method. Our results demonstrate that patches of thin monocrystalline films of metals and semiconductors share the same dewetting dynamics. We also prove the potential of our method by fabricating nanotransfer molding of metal oxide xerogels on silicon and glass substrates. This method allows the novel possibility of transferring these Si-based patterns on different materials, which do not usually undergo dewetting, offering great potential also for microfluidic or sensing applications.

91 citations

Journal ArticleDOI
16 Nov 2016-ACS Nano
TL;DR: This work directly deposited silicon on a chemically inert graphite substrate at room temperature and confirms the metallic character of the deposited silicene, in excellent agreement with band structure calculations that also exhibit the presence of a Dirac cone.
Abstract: The extraordinary properties of graphene have spurred huge interest in the experimental realization of a two-dimensional honeycomb lattice of silicon, namely, silicene. However, its synthesis on supporting substrates remains a challenging issue. Recently, strong doubts against the possibility of synthesizing silicene on metallic substrates have been brought forward because of the non-negligible interaction between silicon and metal atoms. To solve the growth problems, we directly deposited silicon on a chemically inert graphite substrate at room temperature. Based on atomic force microscopy, scanning tunneling microscopy, and ab initio molecular dynamics simulations, we reveal the growth of silicon nanosheets where the substrate–silicon interaction is minimized. Scanning tunneling microscopy measurements clearly display the atomically resolved unit cell and the small buckling of the silicene honeycomb structure. Similar to the carbon atoms in graphene, each of the silicon atoms has three nearest and six s...

82 citations


Cited by
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Journal ArticleDOI
TL;DR: A large amount of work world wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si as mentioned in this paper, and the key importance of crystalline Si nanostructures in determining the behaviour of porous si is highlighted.
Abstract: A large amount of work world-wide has been directed towards obtaining an understanding of the fundamental characteristics of porous Si. Much progress has been made following the demonstration in 1990 that highly porous material could emit very efficient visible photoluminescence at room temperature. Since that time, all features of the structural, optical and electronic properties of the material have been subjected to in-depth scrutiny. It is the purpose of the present review to survey the work which has been carried out and to detail the level of understanding which has been attained. The key importance of crystalline Si nanostructures in determining the behaviour of porous Si is highlighted. The fabrication of solid-state electroluminescent devices is a prominent goal of many studies and the impressive progress in this area is described.

2,371 citations

Journal ArticleDOI
TL;DR: Chemical Vapour Deposition (CVD) involves the chemical reactions of gaseous reactants on or near the vicinity of a heated substrate surface as mentioned in this paper, which can provide highly pure materials with structural control at atomic or nanometer scale level.

1,379 citations

Journal ArticleDOI
TL;DR: The photoluminescence properties of porous silicon have attracted considerable research interest since their discovery in 1990 as discussed by the authors, which is due to excitonic recombination quantum confined in Si nanocrystals which remain after the partial electrochemical dissolution of silicon.

1,261 citations