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Ivan Petrov

Researcher at University of Illinois at Urbana–Champaign

Publications -  326
Citations -  19225

Ivan Petrov is an academic researcher from University of Illinois at Urbana–Champaign. The author has contributed to research in topics: Sputter deposition & Thin film. The author has an hindex of 66, co-authored 317 publications receiving 17175 citations. Previous affiliations of Ivan Petrov include Linköping University & Uppsala University.

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Microstructural evolution during film growth

TL;DR: In this paper, the authors review the present understanding of film growth processes and their role in microstructural evolution as a function of deposition variables including temperature, the presence of reactive species, and the use of low-energy ion irradiation during growth.
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Stretchable batteries with self-similar serpentine interconnects and integrated wireless recharging systems.

TL;DR: This work introduces a set of materials and design concepts for a rechargeable lithium ion battery technology that exploits thin, low modulus silicone elastomers as substrates, with a segmented design in the active materials, and unusual 'self-similar' interconnect structures between them.
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A novel pulsed magnetron sputter technique utilizing very high target power densities

TL;DR: In this paper, the potential for high-aspect-ratio trench filling applications by high power pulsed magnetron sputtering is demonstrated by deposition in via-structures.
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Development of preferred orientation in polycrystalline TiN layers grown by ultrahigh vacuum reactive magnetron sputtering

TL;DR: The preferred orientation of polycrystalline TiN films grown by ultrahigh-vacuum reactive magnetron sputter deposition on amorphous SiO2 at 350°C in pure N2 discharges was controllably varied from (111) to completely (002) by varying the incident ion/metal flux ratio Ji/JTi from 1 to ≥5 with the N+2 ion energy Ei maintained constant at ≂20 eV (≂10 eV per incident accelerated N) as mentioned in this paper.
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Pathways of atomistic processes on TiN(001) and (111) surfaces during film growth: An ab initio study

TL;DR: In this paper, the binding and diffusion energies of adatoms, molecules, and small clusters on polycrystalline TiN layers were calculated using density functional methods, and it was shown that growth of 111-oriented grains is favored under conditions typical for reactive sputter deposition, while the presence of excess atomic N leads to a reduced Ti diffusion length, an enhanced surface island nucleation rate, and a lower chemical potential on the (001) surface.