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Iwao Teramoto

Bio: Iwao Teramoto is an academic researcher. The author has contributed to research in topics: Deposition (phase transition) & Silicon. The author has an hindex of 5, co-authored 9 publications receiving 135 citations.

Papers
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Journal ArticleDOI
TL;DR: In this article, an electroless Ni plating of Si wafers with p-n junctions using conventional solutions was performed and a pronounced difference in plating rate between p and n-type surfaces was observed.
Abstract: In the study of electroless Ni plating of Si wafers with p‐n junctions using conventional solutions, a pronounced difference in plating rate between p‐ and n‐type surfaces is observed. Further experiments show that rate difference probably should not only be attributed to the photovoltaic effect generated at the p‐n junctions but also to the electronegativity difference between p‐ and n‐type Si. The latter effect can be changed by addition of such material as or to the plating solution. Whereas addition increases the rate difference, EDTA addition decreases it. This fact which can be put to practical use gives an extra support for the explanation given above.

35 citations

Patent
04 Apr 1968
TL;DR: SILICON DIOXIDE FILM as mentioned in this paper is formed on the surface of a SEMICONDUCTOR SUBSTRATE by the THERMAL DECOMPOSITION of a MIXED GAS COMPRISING A VAPOR OF ORGANO-OXYSILANE, a VAPor OF AN ALIPHATIC CARBOXYLIC ACID SUCH as ACETIC ACid, and an INERT GAS.
Abstract: SILICON DIOXIDE FILM IS FORMED ON THE SURFACE OF A SEMICONDUCTOR SUBSTRATE BY THE THERMAL DECOMPOSITION OF A MIXED GAS COMPRISING A VAPOR OF AN ORGANO-OXYSILANE, A VAPOR OF AN ALIPHATIC CARBOXYLIC ACID SUCH AS ACETIC ACID, AND AN INERT GAS. THE USE OF SAID MIXED GAS RESULTS IN SUCH ADVANTAGES THAT THE REACTION CAN PROCEED AT SUCH A LOW TEMPERATURE WITHIN THE RANGE OF 300 TO 600*C AND THE VARIATION IN CHARACTERISTIC OF SILICON DIOXIDE AT THE DEPOSITION STEP CAN BE REDUCED.

13 citations

Patent
10 Jun 1968
TL;DR: In this article, a process for forming a titanium dioxide film which has recently been recognized to be useful for an insulating material for film capacitors and other electric circuit, by feeding a mixed gas of vapor of organo oxy titanium compound, oxygen and carrier gas to the surface of heated baseplate to grow an amorphous-like Titanium dioxide film on said surface of baseplate, and if necessary, crystallizing said titanium dioxide dioxide film with a heat treatment in order to stabilize the film.
Abstract: A process for forming a titanium dioxide film which has recently been recognized to be useful for an insulating material for film capacitors and other electric circuit, by feeding a mixed gas of vapor of organo oxy titanium compound, oxygen and carrier gas to the surface of heated baseplate to grow an amorphouslike titanium dioxide film on said surface of baseplate, and if necessary, crystallizing said titanium dioxide film with a heat treatment in order to stabilize the film.

11 citations


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Patent
22 Feb 2002
TL;DR: In this article, the subject of the paper is a glass-, ceramic, or vitroceramic-based substrate provided on at least part of at least one of its faces with a coating with a photocatalytic property containing at least partially crystalline titanium oxide.
Abstract: The subject of the invention is a glass-, ceramic- or vitroceramic-based substrate (1) provided on at least part of at least one of its faces with a coating (3) with a photocatalytic property containing at least partially crystalline titanium oxide. It also relates to the applications of such a substrate and to its method of preparation.

299 citations

Journal ArticleDOI
TL;DR: An attempt was made to explain the optical properties of the resulting TiO(2) films with regard to crystal structure, chemical composition, packing density influenced by the molecular composition of the vapor beam, chemical reaction with the crucible, substrate temperature, oxygen pressure, and deposition rate.
Abstract: In this paper experiments with reactive evaporation of the starting materials Ti, TiO, Ti(2)O(3), Ti(3)O(5), and TiO(2) to obtain nonabsorbing TiO(2) films are under discussion. For the starting materials TiO and Ti(3)O(5) the dependence of the TiO(2) film refractive index on the substrate temperature, oxygen pressure, and deposition rate was measured. For TiO dispersion curves of the resulting TiO(2) films as a function of the substrate temperature during film formation were determined. The successive evaporation of the different starting materials resulted in the formation of lambda/4 TiO(2) films with different refractive indices. This phenomenon was most obvious during the first evaporation. It disappeared after several evaporations in two groups of TiO2 films with different refractive indices. From the beginning only the starting materials Ti and Ti(3)O(5) resulted in TiO(2) films with constant refractive indices. The first material produced a high, the latter a lower film index. Depending on the number of evaporations performed, both types of TiO(2) films can be obtained with TiO. The films and residues in the crucibles were also subjected to chemical analyses. An attempt was made to explain the optical properties of the resulting TiO(2) films with regard to crystal structure, chemical composition, packing density influenced by the molecular composition of the vapor beam, chemical reaction with the crucible, substrate temperature, O(2) pressure, and deposition rate.

217 citations

Journal ArticleDOI
TL;DR: In this article, the electronic properties of a TiO2/Si interface were analyzed in detail using metal-insulator-semiconductor structures and the minimum interface state density in the bandgap was as low as 2×1011 cm-2 eV-1.
Abstract: Uniform TiO2 thin films with a large er (up to 86) were prepared at low temperatures (200-400°C) by CVD. The films deposited at 200°C were amorphous and those at high temperatures were polycrystalline structures of anatase. The electronic properties of a TiO2/Si interface were analyzed in detail using metal-insulator-semiconductor structures. The minimum interface state density in the bandgap was as low as 2×1011 cm-2 eV-1, showing the usefulness of the TiO2 films for the gate insulators of MIS diodes. An anomalous behavior of photo-induced current observed for the first time is also presented.

213 citations

Patent
12 Mar 1998
TL;DR: In this article, a substrate is provided with a photocatalytically-activated self-cleaning surface by formulating a selfcleaning coating on the substrate by spray pyrolysis chemical vapor deposition or magnetron sputter vacuum deposition.
Abstract: A method and article are disclosed wherein a substrate is provided with a photocatalytically-activated self-cleaning surface by forming a photocatalytically-activated self-cleaning coating on the substrate by spray pyrolysis chemical vapor deposition or magnetron sputter vacuum deposition. The coating has a thickness of at least about 500 Angstroms to limit sodium-ion poisoning to a portion of the coating facing the substrate. Alternatively, a sodium ion diffusion barrier layer is deposited over the substrate prior to the deposition of the photocatalytically-activated self-cleaning coating to prevent sodium ion poisoning of the photocatalytically-activated self-cleaning coating. The substrate includes glass substrates, including glass sheet and continuous float glass ribbon.

195 citations

Journal ArticleDOI
TL;DR: Antireflective (AR) coatings, which are produced from organometallic driven solutions containing oxide constituents in a chemically polymerized form, are presented and showed as much as 49% improvement in efficiency over the uncoated state.
Abstract: Antireflective (AR) coatings, which are produced from organometallic driven solutions containing oxide constituents in a chemically polymerized form, are presented. These solutions leave a film on substrates which, upon heat treatment, converts to a glasslike oxide film having the desired optical thickness and index of refraction. The index can be varied continuously from 1.4 to 2.4; thus the AR coatings can be fine-tuned for different substrates and for specific wavelengths of light. Silicon solar cells AR-coated by this technique showed as much as 49% improvement in efficiency over the uncoated state. The real advantage of the process, however, lies in the fact that it is simple, well-suited for automated mass production of photovoltaic cells, and reduces the cost of coating application from an estimated $0.20 per W-package to about $0.01 per W-package.

181 citations