Author
J. A. van den Berg
Other affiliations: University of Manchester, University of Salford
Bio: J. A. van den Berg is an academic researcher from University of Huddersfield. The author has contributed to research in topics: Ion implantation & Ion. The author has an hindex of 23, co-authored 124 publications receiving 1842 citations. Previous affiliations of J. A. van den Berg include University of Manchester & University of Salford.
Papers published on a yearly basis
Papers
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TL;DR: Using high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites as discussed by the authors.
Abstract: Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites.
172 citations
01 Jan 2013
TL;DR: Using high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites as discussed by the authors.
Abstract: Doping of graphene via low energy ion implantation could open possibilities for fabrication of nanometer-scale patterned graphene-based devices as well as for graphene functionalization compatible with large-scale integrated semiconductor technology. Using advanced electron microscopy/spectroscopy methods, we show for the first time directly that graphene can be doped with B and N via ion implantation and that the retention is in good agreement with predictions from calculation-based literature values. Atomic resolution high-angle dark field imaging (HAADF) combined with single-atom electron energy loss (EEL) spectroscopy reveals that for sufficiently low implantation energies ions are predominantly substitutionally incorporated into the graphene lattice with a very small fraction residing in defect-related sites.
145 citations
TL;DR: In this article, the potential of thin SiO2 oxides implanted by very low energy (1 keV) Si ions and subsequently annealed are explored with regards to their potential as active elements of memory devices.
Abstract: Thin SiO2 oxides implanted by very-low-energy (1 keV) Si ions and subsequently annealed are explored with regards to their potential as active elements of memory devices. Charge storage effects as a function of Si fluence are investigated through capacitance and channel current measurements. Capacitance–voltage and source–drain current versus gate voltage characteristics of devices implanted with a dose of 1×1016 cm−2 or lower exhibit clear hysteresis characteristics at low electric field. The observed fluence dependence of the device electrical properties is interpreted in terms of the implanted oxide structure.
141 citations
TL;DR: The structure and composition of the native Si oxide were studied using high depth resolution medium energy ion scattering (MEIS) spectrometry in this article, which revealed that the oxide is an amorphous material of thickness 20 A and showed qualitatively that the interface between the oxide and the underlying structure consists of layers of Si atoms displaced from their normal lattice sites.
75 citations
TL;DR: In this article, low energy ion scattering has been used to investigate the early stages of the oxidation of a Ni(100) surface and the development of surface structures, and it is concluded that during the early chemisorption, a two stage process takes place: an initial oxygen adsorption during which the O atoms probably reside within the fourfold surface hollows, followed by a reconstruction process, caused by the combined action of at least two nearest neighbor O atoms, trapping mobile Ni adatoms, after which the o atoms stabilise at a site in or close to
73 citations
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TL;DR: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each that are among the hottest research topics of the last decades.
Abstract: Nanocrystals (NCs) discussed in this Review are tiny crystals of metals, semiconductors, and magnetic material consisting of hundreds to a few thousand atoms each. Their size ranges from 2-3 to about 20 nm. What is special about this size regime that placed NCs among the hottest research topics of the last decades? The quantum mechanical coupling * To whom correspondence should be addressed. E-mail: dvtalapin@uchicago.edu. † The University of Chicago. ‡ Argonne National Lab. Chem. Rev. 2010, 110, 389–458 389
3,720 citations
IBM1
TL;DR: In this article, the surface topographies in real space and work function profiles on an atomic sale were obtained using scanning tunneling microscopy, a novel technique based on vacuum tunneling.
648 citations
TL;DR: This Review systematically introduces and discusses the classic synthesis methods, advanced characterization techniques, and various catalytic applications toward two-dimensional materials confining single-atom catalysts.
Abstract: Two-dimensional materials and single-atom catalysts are two frontier research fields in catalysis. A new category of catalysts with the integration of both aspects has been rapidly developed in recent years, and significant advantages were established to make it an independent research field. In this Review, we will focus on the concept of two-dimensional materials confining single atoms for catalysis. The new electronic states via the integration lead to their mutual benefits in activity, that is, two-dimensional materials with unique geometric and electronic structures can modulate the catalytic performance of the confined single atoms, and in other cases the confined single atoms can in turn affect the intrinsic activity of two-dimensional materials. Three typical two-dimensional materials are mainly involved here, i.e., graphene, g-C3N4, and MoS2, and the confined single atoms include both metal and nonmetal atoms. First, we systematically introduce and discuss the classic synthesis methods, advanced ...
647 citations
TL;DR: It is demonstrated that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants.
Abstract: Functionalized graphene has been extensively studied with the aim of tailoring properties for gas sensors, superconductors, supercapacitors, nanoelectronics, and spintronics. A bottleneck is the capability to control the carrier type and density by doping. We demonstrate that a two-step process is an efficient way to dope graphene: create vacancies by high-energy atom/ion bombardment and fill these vacancies with desired dopants. Different elements (Pt, Co, and In) have been successfully doped in the single-atom form. The high binding energy of the metal-vacancy complex ensures its stability and is consistent with in situ observation by an aberration-corrected and monochromated transmission electron microscope.
542 citations