J. Brini

TL;DR: The double-gate control of silicon-on-insulator (SOI) transistors is used to force the whole silicon film (interface layers and volume) in strong inversion as discussed by the authors.

TL;DR: In this article, an improved analysis of low frequency trapping noise in a MOS device is proposed, taking into account the supplementary fluctuations of the mobility induced by those of the interface charge, which enables an adequate description of the gate voltage dependence of the input equivalent gate voltage noise to be obtained in various actual situations.

TL;DR: In this paper, analytical models for thin and ultra-thin film silicon-on-insulator (SOI) MOSFETs operating in weak or strong inversion are proposed.

TL;DR: In this article, a simple method is described for separating the charge pumping current from the parasitic tunneling component in a charge pumping measurement performed on MOS transistors with ultrathin gate oxide thickness.

TL;DR: In this article, a linear region model was proposed to optimize the energy density of laser annealing and to make predictions about polysilicon TFT technology, since TFTs performances versus grain size plots can be obtained.