J
J. Maserjian
Researcher at California Institute of Technology
Publications - 6
Citations - 490
J. Maserjian is an academic researcher from California Institute of Technology. The author has contributed to research in topics: Cathodoluminescence & Exciton. The author has an hindex of 6, co-authored 6 publications receiving 482 citations.
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Journal ArticleDOI
Behavior of the Si/SiO2 interface observed by Fowler-Nordheim tunneling
J. Maserjian,N. Zamani +1 more
TL;DR: In this paper, the authors show that after tunnel injection of 1017 −5×1018 electrons/cm2, the barrier undergoes significant degradation leading to enhanced tunneling conductance, with reproducible behavior observed among different samples.
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Oscillations in MOS tunneling
G. Lewicki,J. Maserjian +1 more
TL;DR: In this paper, the authors measured oscillations from Fowler-Nordheim tunneling currents in MOS capacitors with oxide thicknesses ranging from 30 to 75 A. The mean free path within the SiO2 conduction band is on the order of 13 A.
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A novel X-ray photoelectron spectroscopy study of the Al/SiO2 interface
TL;DR: In this article, the chemical and physical properties of the interface between bulk SiO2 and thin aluminum films were measured using x-ray photoelectron spectroscopy (XPS) and electrical measurements of unannealed, resistively evaporated Al films on thermal SiO 2.
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Cathodoluminescence and transmission electron microscopy study of dark line defects in thick In0.2Ga0.8As/GaAs multiple quantum wells
Daniel H. Rich,Thomas George,William T. Pike,J. Maserjian,Frank J. Grunthaner,Anders Larsson +5 more
TL;DR: In this paper, a plan-view TEM was performed on In(0.2)Ga( 0.8)As/GaAs MQW structures and the observed large variation in the exciton luminescence intensity was interpreted as due to the presence of nonradiative recombination centers spread homogeneously in the MQw region away from interface misfit dislocations.
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Electron beam‐induced absorption modulation imaging of strained In0.2Ga0.8As/GaAs multiple quantum wells
Daniel H. Rich,K. Rammohan,Y. Tang,H. T. Lin,J. Maserjian,Frank J. Grunthaner,Anders Larsson,Shmuel I. Borenstain +7 more
TL;DR: In this paper, the authors examined the effects of electronhole plasma generation on excitonic absorption phenomena in nipi−doped In0.2Ga0.8As/GaAs multiple quantum wells (MQWs) using a novel technique called electron beam-induced absorption modulation imaging.