J. Niehusmann

Bio: J. Niehusmann is an academic researcher from RWTH Aachen University. The author has contributed to research in topics: Femtosecond & Silicon on insulator. The author has an hindex of 6, co-authored 13 publications receiving 566 citations.

Ultrahigh-quality-factor silicon-on-insulator microring resonator

Abstract: The development of ultrahigh-quality-factor Q silicon-on-insulator (SOI) microring resonators based on silicon wire waveguides is presented. An analytical description is derived, illustrating that in addition to low propagation losses the critical coupling condition is essential for optimizing device characteristics. Propagation losses as low as 1.9±0.1 dB/cm in a curved waveguide with a bending radius of 20 µm and a Q factor as high as 139.000±6.000 are demonstrated. These are believed to be the highest values reported for a curved SOI waveguide device and for any directly structured semiconductor microring fabricated without additional melting-induced surface smoothing.

Ultrafast Kerr-induced all-optical wavelength conversion in silicon waveguides using 1.55 μm femtosecond pulses

Abstract: The propagation of 300 femtosecond optical pulses in Silicon-on Insulator waveguides has been studied by means of a pump-probe set-up. The ultrafast pulses allowed the observation of large Kerr-induced red and blue shifts (9nm and 15nm, respectively) of the probe signal depending on the delay between pump (1554nm) and probe (1683nm) pulses. A numerical model taking into account the Kerr effect, Two Photon Absorption and Free Carrier Absorption is presented and provides good agreement with our experimental data and data in literature. A microring resonator based device is proposed that exploits the observed wavelength shift for sub-picosecond all-optical switching.

High-speed all-optical switching in ion-implanted silicon-on-insulator microring resonators

Abstract: We demonstrate high-speed all-optical switching via vertical excitation of an electron-hole plasma in an oxygen-ion implanted silicon-on-insulator microring resonator. Based on the plasma dispersion effect the spectral response of the device is rapidly modulated by photoinjection and subsequent recombination of charge carriers at artificially introduced fast recombination centers. At an implantation dose of 1×1012 cm−2 the carrier lifetime is reduced to 55 ps, which facilitates optical switching of signal light in the 1.55 μm wavelength range at modulation speeds larger than 5 Gbits/s.

Time-resolved broadband analysis of slow-light propagation and superluminal transmission of electromagnetic waves in three-dimensional photonic crystals

Abstract: A time-resolved analysis of the amplitude and phase of THz pulses propagating through three-dimensional photonic crystals is presented. Single-cycle pulses of THz radiation allow measurements over a wide frequency range, spanning more than an octave below, at and above the bandgap of strongly dispersive photonic crystals. Transmission data provide evidence for slow group velocities at the photonic band edges and for superluminal transmission at frequencies in the gap. Our experimental results are in good agreement with finite-difference-time-domain simulations.

Silicon microring resonators

Abstract: An overview is presented of the current state-of-the-art in silicon nanophotonic ring resonators. Basic theory of ring resonators is discussed, and applied to the peculiarities of submicron silicon photonic wire waveguides: the small dimensions and tight bend radii, sensitivity to perturbations and the boundary conditions of the fabrication processes. Theory is compared to quantitative measurements. Finally, several of the more promising applications of silicon ring resonators are discussed: filters and optical delay lines, label-free biosensors, and active rings for efficient modulators and even light sources.

Controlling the dynamics of spontaneous emission from quantum dots by photonic crystals

Abstract: Control of spontaneously emitted light lies at the heart of quantum optics. It is essential for diverse applications ranging from miniature lasers and light-emitting diodes, to single-photon sources for quantum information, and to solar energy harvesting. To explore such new quantum optics applications, a suitably tailored dielectric environment is required in which the vacuum fluctuations that control spontaneous emission can be manipulated. Photonic crystals provide such an environment: they strongly modify the vacuum fluctuations, causing the decay of emitted light to be accelerated or slowed down, to reveal unusual statistics, or to be completely inhibited in the ideal case of a photonic bandgap. Here we study spontaneous emission from semiconductor quantum dots embedded in inverse opal photonic crystals. We show that the spectral distribution and time-dependent decay of light emitted from excitons confined in the quantum dots are controlled by the host photonic crystal. Modified emission is observed over large frequency bandwidths of 10%, orders of magnitude larger than reported for resonant optical microcavities. Both inhibited and enhanced decay rates are observed depending on the optical emission frequency, and they are controlled by the crystals’ lattice parameter. Our experimental results provide a basis for all-solid-state dynamic control of optical quantum systems.

Integrated optofluidics: A new river of light

Abstract: The realization of miniaturized optofluidic platforms offers potential for achieving more functional and more compact devices. Such integrated systems bring fluid and light together and exploit their microscale interaction for a large variety of applications. The high sensitivity of compact microphotonic devices can generate effective microfluidic sensors, with integration capabilities. By turning the technology around, the exploitation of fluid properties holds the promise of highly flexible, tunable or reconfigurable microphotonic devices. We overview some of the exciting developments so far.

12.5 Gbit/s carrier-injection-based silicon micro-ring silicon modulators

Abstract: We show a scheme for achieving high-speed operation for carrier-injection based silicon electro-optical modulator, which is optimized for small size and high modulation depth. The performance of the device is analyzed theoretically and a 12.5-Gbit/s modulation with high extinction ratio >9dB is demonstrated experimentally using a silicon micro-ring modulator.

Nonlinear optical phenomena in silicon waveguides: Modeling and applications

Abstract: Several kinds of nonlinear optical effects have been observed in recent years using silicon waveguides, and their device applications are attracting considerable attention. In this review, we provide a unified theoretical platform that not only can be used for understanding the underlying physics but should also provide guidance toward new and useful applications. We begin with a description of the third-order nonlinearity of silicon and consider the tensorial nature of both the electronic and Raman contributions. The generation of free carriers through two-photon absorption and their impact on various nonlinear phenomena is included fully within the theory presented here. We derive a general propagation equation in the frequency domain and show how it leads to a generalized nonlinear Schrodinger equation when it is converted to the time domain. We use this equation to study propagation of ultrashort optical pulses in the presence of self-phase modulation and show the possibility of soliton formation and supercontinuum generation. The nonlinear phenomena of cross-phase modulation and stimulated Raman scattering are discussed next with emphasis on the impact of free carriers on Raman amplification and lasing. We also consider the four-wave mixing process for both continuous-wave and pulsed pumping and discuss the conditions under which parametric amplification and wavelength conversion can be realized with net gain in the telecommunication band.