J. P. Remeika

Bio: J. P. Remeika is an academic researcher. The author has contributed to research in topics: Metal K-edge & Metal–insulator transition. The author has an hindex of 1, co-authored 1 publications receiving 337 citations.

Crystal structure and isothermal compression of Fe2O3, Cr2O3, and V2O3 to 50 kbars

Abstract: Crystal structures of several of the corundum‐type oxides have been determined at pressures to 50 kbars. All materials have linear compression within the pressure range and precision of the techniques used. Compression of Cr2O3 and Al2O3 is essentially isotropic (c/a remains constant), Fe2O3 has a slightly anisotropic compression, with c/a decreasing slightly with pressure, and V2O3 is very anisotropic, with the a axis nearly three times more compressible than c. Similar differences are observed in the structural parameters. Aluminum, iron, and chromium sesquioxides simply scale, whereas atomic positions in V2O3 approach an ideal HCP arrangement with increasing pressure. The differences in structural variation with pressure for these ’’isostructural’’ compounds emphasize the difficulty in using simple bonding parameters to predict details of crystal structures under nonambient conditions.

Electronic structure calculations using dynamical mean field theory

Abstract: The calculation of the electronic properties of materials is an important task of solid-state theory, albeit particularly difficult if electronic correlations are strong, e.g., in transition metals, their oxides and in f-electron systems. The standard approach to material calculations, the density functional theory in its local density approximation (LDA), incorporates electronic correlations only very rudimentarily and fails if the correlations are strong. Encouraged by the success of dynamical mean field theory (DMFT) in dealing with strongly correlated model Hamiltonians, physicists from the bandstructure and the many-body communities have joined forces and developed a combined LDA + DMFT method recently. Depending on the strength of electronic correlations, this new approach yields a weakly correlated metal as in the LDA, a strongly correlated metal or a Mott insulator. This approach is widely regarded as a breakthrough for electronic structure calculations of strongly correlated materials. We review ...

A comprehensive review on emerging artificial neuromorphic devices

Abstract: The rapid development of information technology has led to urgent requirements for high efficiency and ultralow power consumption. In the past few decades, neuromorphic computing has drawn extensive attention due to its promising capability in processing massive data with extremely low power consumption. Here, we offer a comprehensive review on emerging artificial neuromorphic devices and their applications. In light of the inner physical processes, we classify the devices into nine major categories and discuss their respective strengths and weaknesses. We will show that anion/cation migration-based memristive devices, phase change, and spintronic synapses have been quite mature and possess excellent stability as a memory device, yet they still suffer from challenges in weight updating linearity and symmetry. Meanwhile, the recently developed electrolyte-gated synaptic transistors have demonstrated outstanding energy efficiency, linearity, and symmetry, but their stability and scalability still need to be optimized. Other emerging synaptic structures, such as ferroelectric, metal–insulator transition based, photonic, and purely electronic devices also have limitations in some aspects, therefore leading to the need for further developing high-performance synaptic devices. Additional efforts are also demanded to enhance the functionality of artificial neurons while maintaining a relatively low cost in area and power, and it will be of significance to explore the intrinsic neuronal stochasticity in computing and optimize their driving capability, etc. Finally, by looking into the correlations between the operation mechanisms, material systems, device structures, and performance, we provide clues to future material selections, device designs, and integrations for artificial synapses and neurons.

Universality and Critical Behavior at the Mott Transition

Abstract: We report conductivity measurements of Cr-doped V2O3 using a variable pressure technique. The critical behavior of the conductivity near the Mott insulator to metal critical endpoint is investigated in detail as a function of pressure and temperature. The critical exponents are determined, as well as the scaling function associated with the equation of state. The universal properties of a liquid-gas transition are found. This is potentially a generic description of the Mott critical endpoint in correlated electron materials.