Self-assembling aluminium nanoparticles are used to make a plasmon-enhanced device for desalination. Plasmonics has generated tremendous excitement because of its unique capability to focus light into subwavelength volumes1, beneficial for various applications such as light harvesting2,3, photodetection4, sensing5, catalysis6 and so on. Here we demonstrate a plasmon-enhanced solar desalination device, fabricated by the self–assembly of aluminium nanoparticles into a three-dimensional porous membrane. The formed porous plasmonic absorber can float naturally on water surface, efficiently absorb a broad solar spectrum (>96%) and focus the absorbed energy at the surface of the water to enable efficient (∼90%) and effective desalination (a decrease of four orders of magnitude). The durability of the devices has also been examined, indicating a stable performance over 25 cycles under various illumination conditions. The combination of the significant desalination effect, the abundance and low cost of the materials, and the scalable production processes suggest that this type of plasmon-enhanced solar desalination device could provide a portable desalination solution.

3D self-assembly of aluminium nanoparticles for plasmon-enhanced solar desalination

Light-Emitting Diodes. (Monographs in Electrical and Electronic Engineering.) By A. A. Bergh and P. J. Dean. Pp. viii+591. (Clarendon: Oxford; Oxford University: London, 1976.) £22.

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Light-emitting diodes

Inorganic semiconductor light-emitting diodes (LEDs) are environmentally benign and have already found widespread use as indicator lights, large-area displays, and signage applications. In addition, LEDs are very promising candidates for future energy-saving light sources suitable for office and home lighting applications. Today, the entire visible spectrum can be covered by light-emitting semiconductors: AlGaInP and AlGaInN compound semiconductors are capable of emission in the red to yellow wavelength range and ultraviolet (uv) to green wavelength range, respectively. Currently, two basic approaches exist for white light sources: The combination of one or more phosphorescent materials with a semiconductor LED and the use of multiple LEDs emitting at complementary wavelengths. Both approaches are suitable for high efficiency sources that have the potential to replace incandescent and fluorescent lights. In this article, the properties of inorganic LEDs will be presented, including emission spectra, electrical characteristics, and current-flow patterns. Structures providing high internal quantum efficiency, namely, heterostructures and multiple quantum well structures, will be discussed. Advanced techniques enhancing the external quantum efficiency will be reviewed, including resonant-cavities, die shaping (chip shaping), omnidirectional reflectors, and photonic crystals. Different approaches to white LEDs will be presented and figures-of-merit such as the color rendering index, luminous efficacy, and luminous efficiency will be explained. Finally, the packaging of low power and high power LED dies will be discussed.


Keywords:

light-emitting diodes (LEDs);
solid-state lighting;
compound semiconductors;
device physics;
reflectors;
resonant cavity LEDs;
white LEDs;
packaging

Light Emitting Diodes

Optical thin-film materials with low refractive index for broadband elimination of Fresnel reflection

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Anti-reflective coatings (ARCs) have evolved into highly effective reflectance and glare reducing components for various optical and opto-electrical equipments. Extensive research in optical and biological reflectance minimization as well as the emergence of nanotechnology over the years has contributed to the enhancement of ARCs in a major way. In this study the prime objective is to give a comprehensive idea of the ARCs right from their inception, as they were originally conceptualized by the pioneers and lay down the basic concepts and strategies adopted to minimize reflectance. The different types of ARCs are also described in greater detail and the state-of-the-art fabrication techniques have been fully illustrated. The inspiration that ARCs derive from nature (‘biomimetics’) has been an area of major research and is discussed at length. The various materials that have been reportedly used in fabricating the ARCs have also been brought into sharp focus. An account of application of ARCs on solar cells and modules, contemporary research and associated challenges are presented in the end to facilitate a universal understanding of the ARCs and encourage future research.

Anti-reflective coatings: A critical, in-depth review

Solid-state light sources are in the process of profoundly changing the way humans generate light for general lighting applications. Solid-state light sources possess two highly desirable features, which set them apart from most other light sources: (i) they have the potential to create light with essentially unit power efficiency and (ii) the properties of light, such as spectral composition and temporal modulation, can be controlled to a degree that is not possible with conventional light sources such as incandescent and fluorescent lamps. The implications are enormous and, as a consequence, many positive developments are to be expected including a reduction in global energy consumption, reduction of global-warming-gas and pollutant emissions and a multitude of new functionalities benefiting numerous applications. This review will assess the impact of solid-state lighting technology on energy consumption, the environment and on emerging application fields that make use of the controllability afforded by solid-state sources. The review will also discuss technical areas that fuel continued progress in solid-state lighting. Specifically, we will review the use of novel phosphor distributions in white light-emitting diodes (LEDs) and show the strong influence of phosphor distribution on efficiency. We will also review the use of reflectors in LEDs with emphasis on 'perfect' reflectors, i.e. reflectors with highly reflective omni-directional characteristics. Finally, we will discuss a new class of thin-film materials with an unprecedented low refractive index. Such low-n materials may strongly contribute to the continuous progress in solid-state lighting.

https://iopscience.iop.org/article/10.1088/0034-4885/69/12/R01/pdf

Solid-state lighting?a benevolent technology

The junction temperature of AlGaN ultraviolet light-emitting diodes emitting at 295nm is measured by using the temperature coefficients of the diode forward voltage and emission peak energy. The high-energy slope of the spectrum is explored to measure the carrier temperature. A linear relation between junction temperature and current is found. Analysis of the experimental methods reveals that the diode-forward voltage is the most accurate (±3°C). A theoretical model for the dependence of the diode forward voltage (Vf) on junction temperature (Tj) is developed that takes into account the temperature dependence of the energy gap. A thermal resistance of 87.6K∕W is obtained with the device mounted with thermal paste on a heat sink.

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Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods

Enhancement of light extraction in a GaInN light-emitting diode (LED) employing a conductive omnidirectional reflector (ODR) consisting of GaN, an indium-tin oxide (ITO) nanorod low-refractive-index layer, and an Ag layer is presented. An array of ITO nanorods is deposited on p-type GaN by oblique-angle electron-beam deposition. The refractive index of the nanorod ITO layer is 1.34 at 461nm, significantly lower than that of dense ITO layer, which is n=2.06. The GaInN LEDs with GaN∕low-n ITO/Ag ODR show a lower forward voltage and a 31.6% higher light-extraction efficiency than LEDs with Ag reflector. This is attributed to enhanced reflectivity of the ODR that employs the low-n ITO layer.

GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer

A conductive distributed Bragg reflector (DBR) composed entirely of a single material—indium tin oxide (ITO)—is reported. The high- and low-refractive-index layers of the DBR are deposited by oblique-angle deposition and consist of ITO thin films with low and high porosities, which yield an index contrast of Δn=0.4. A single-material DBR with three periods achieves a reflectivity of 72.7%, in excellent agreement with theory.

J.-Q. Xi

Papers

Optical thin-film materials with low refractive index for broadband elimination of Fresnel reflection

Solid-state lighting?a benevolent technology

Junction and carrier temperature measurements in deep-ultraviolet light-emitting diodes using three different methods

GaInN light-emitting diode with conductive omnidirectional reflector having a low-refractive-index indium-tin oxide layer

Distributed Bragg reflector consisting of high- and low-refractive-index thin film layers made of the same material