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J. Samuel Jiang

Researcher at Johns Hopkins University

Publications -  7
Citations -  2176

J. Samuel Jiang is an academic researcher from Johns Hopkins University. The author has contributed to research in topics: Ferromagnetism & Giant magnetoresistance. The author has an hindex of 5, co-authored 7 publications receiving 2133 citations.

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Giant magnetoresistance in nonmultilayer magnetic systems.

TL;DR: The observed isotropic giant magnetoresistance (GMR) in nonmultilayer magnetic systems using granular magnetic solids is shown to occur in magnetically inhomogeneous media containing nonaligned ferromagnetic entities on a microscopic scale.
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Giant negative magnetoresistance in granular ferromagnetic systems (invited)

TL;DR: In this paper, it is shown that the GMR is due to magnetic scattering of the conduction electrons by the nonaligned magnetic entities, and the essential contribution to the resistivity is ρm[1−F(M/Ms), where F(M)/Ms is the spin disorder from ferromagnetic alignment and ρ is the magnetic resistivity that defines the size of the giant negative magnetoresistance.
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Extraordinary Hall effect and giant magnetoresistance in the granular Co-Ag system.

TL;DR: The spin-dependent electron scattering is revealed in the forms of a giant magnetoresistance and an extraordinary Hall effect, both of which are found to be strongly dependent on the Co particle size and the electron mean free path.
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Giant magnetoresistance in the granular Co-Ag system.

TL;DR: The GMR is isotropic and is the consequence of the departure from ferromagnetic alignment of the Co particles, and the resistivity component responsible for GMR and its temperature dependence is determined.
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Magnetic properties and giant magnetoresistance of granular permalloy in silver

TL;DR: In this article, the first results of magnetic properties and giant magnetoresistance of granular permalloy in a metallic matrix were reported, showing that these new materials have resistivities comparable to those of the ferromagnetic alloys currently used in magnetoresistive devices.