J.T. Kao

Bio: J.T. Kao is an academic researcher from Massachusetts Institute of Technology. The author has contributed to research in topics: Low-power electronics & Subthreshold conduction. The author has an hindex of 1, co-authored 1 publications receiving 462 citations.

Dual-threshold voltage techniques for low-power digital circuits

Abstract: Scaling and power reduction trends in future technologies will cause subthreshold leakage currents to become an increasingly large component of total power dissipation This paper presents several dual-threshold voltage techniques for reducing standby power dissipation while still maintaining high performance in static and dynamic combinational logic blocks MTCMOS sleep transistor sizing issues are addressed, and a hierarchical sizing methodology based on mutual exclusive discharge patterns is presented A dual-V/sub t/ domino logic style that provides the performance equivalent of a purely low-V/sub t/ design with the standby leakage characteristic of a purely high-V/sub t/ implementation is also proposed

Microarchitectural techniques for power gating of execution units

Abstract: Leakage power is a major concern in current and future microprocessor designs. In this paper, we explore the potential of architectural techniques to reduce leakage through power-gating of execution units. This paper first develops parameterized analytical equations that estimate the break-even point for application of power-gating techniques. The potential for power gating execution units is then evaluated, for the range of relevant break-even points determined by the analytical equations, using a state-of-the-art out-of-order superscalar processor model. The power gating potential of the floating-point and fixed-point units of this processor is then evaluated using three different techniques to detect opportunities for entering sleep mode; ideal, time-based, and branch-misprediction-guided. Our results show that using the time-based approach, floating-point units can be put to sleep for up to 28% of the execution cycles at a performance loss of 2%. For the more difficult to power-gate fixed-point units, the branch misprediction guided technique allows the fixed-point units to be put to sleep for up to 40% more of the execution cycles compared to the simpler time-based technique, with similar performance impact. Overall, our experiments demonstrate that architectural techniques can be used effectively in power-gating execution units.

Dynamic-sleep transistor and body bias for active leakage power control of microprocessors

Abstract: In order to manage the active power consumption of high-performance digital designs, active leakage control techniques are required to provide significant leakage power savings coupled with fast time constants for entering and exiting idle mode. In this paper, dynamic sleep transistors and body bias are used in conjunction with clock gating to control active leakage for a 32-bit integer execution core in 130-nm CMOS technology. Measurements on pMOS sleep transistor reveal that lowest-leakage state is reached in less than 1 /spl mu/s, resulting in 37/spl times/ reduction in leakage power, while reactivation of block is achieved in less than two clock cycles. PMOS body bias reduces leakage power by 2/spl times/ with no performance penalty, and similar reactivation time. Power measurements at 4 GHz, 1.3 V, 75/spl deg/C demonstrate 8% total power reduction using dynamic body bias and 15% power reduction using a pMOS sleep transistor, for a typical activity profile.

Standby and Active Leakage Current Control and Minimization in CMOS VLSI Circuits

Abstract: In many new high performance designs, the leakage component of power consumption is comparable to the switching component. Reports indicate that 40% or even higher percentage of the total power consumption is due to the leakage of transistors. This percentage will increase with technology scaling unless effective techniques are introduced to bring leakage under control. This article focuses on circuit optimization and design automation techniques to accomplish this goal. The first part of the article provides an overview of basic physics and process scaling trends that have resulted in a significant increase in the leakage currents in CMOS circuits. This part also distinguishes between the standby and active components of the leakage current. The second part of the article describes a number of circuit optimization techniques for controlling the standby leakage current, including power gating and body bias control. The third part of the article presents techniques for active leakage control, including use of multiple-threshold cells, long channel devices, input vector design, transistor stacking to switching noise, and sizing with simultaneous threshold and supply voltage assignment.

Subthreshold leakage modeling and reduction techniques

Abstract: As technology scales, subthreshold leakage currents grow exponentially and become an increasingly large component of total power dissipation. CAD tools to help model and manage subthreshold leakage currents will be needed for developing ultra low power and high performance integrated circuits. This paper gives an overview of current research to control leakage currents, with an emphasis on areas where CAD improvements will be needed. The first part of the paper explores techniques to model subthreshold leakage currents at the device, circuit, and system levels. Next, circuit techniques such as source biasing, dual Vt partitioning, MTCMOS, and VTCMOS are described. These techniques reduce leakage currents during standby states and minimize power consumption. This paper also explores ways to reduce total active power by limiting leakage currents and optimally trading off between dynamic and leakage power components.

A 175 mV multiply-accumulate unit using an adaptive supply voltage and body bias (ASB) architecture

Abstract: In order to minimize total active power consumption in digital circuits, one must take into account subthreshold leakage currents that grow exponentially as technology scales. This research develops a theoretical model to predict how dynamic power and subthreshold power must be balanced to give an optimal V/sub DD//V/sub t/ operating point that minimizes total active power consumption for different workload and operating conditions. A 175-mV multiply-accumulate test chip using a triple-well technology with tunable supply and body bias values is measured to experimentally verify the tradeoffs between the various sources of power. The test chip shows that there is an optimum V/sub DD//V/sub t/ operating point, although it differs from the theoretical limit because of excessive forward bias currents. Finally, we propose a preliminary automatic supply and body biasing architecture (ASB) that automatically configures a circuit to operate with the lowest possible active power consumption.