J
Jacek K. Furdyna
Researcher at University of Notre Dame
Publications - 911
Citations - 22128
Jacek K. Furdyna is an academic researcher from University of Notre Dame. The author has contributed to research in topics: Magnetic semiconductor & Magnetization. The author has an hindex of 61, co-authored 901 publications receiving 21108 citations. Previous affiliations of Jacek K. Furdyna include Korea University & Massachusetts Institute of Technology.
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Diluted magnetic semiconductors
TL;DR: In this paper, the physical properties of diluted magnetic semiconductors (DMS) of the type AII1−xMnxBVI (e.g., Cd1−mnxSe, Hg 1−mnsTe) were reviewed.
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The fractional a.c. Josephson effect in a semiconductor-superconductor nanowire as a signature of Majorana particles
TL;DR: The fractional alternating-current Josephson effect produces a series of steps in the current-voltage characteristics of a superconducting junction driven at radiofrequencies as discussed by the authors, which is observed in a semiconductor-superconductor nanowire.
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Effect of the location of Mn sites in ferromagnetic Ga 1-x Mn x As on its Curie temperature
Kin Man Yu,Wladek Walukiewicz,Tomasz Wojtowicz,I. Kuryliszyn,Xinyu Liu,Y. Sasaki,Jacek K. Furdyna +6 more
TL;DR: In this paper, a strong correlation between the location of Mn sites in ferromagnetic Ga{sub 1-x}Mn{sub x}As measured by channeling Rutherford backscattering and by particle induced x-ray emission experiments and its Curie temperature was reported.
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Evidence for reversible control of magnetization in a ferromagnetic material by means of spin–orbit magnetic field
A. Chernyshov,Mason Overby,Xinyu Liu,Jacek K. Furdyna,Yuli Lyanda-Geller,Leonid P. Rokhinson +5 more
TL;DR: The magnetization of a magnetic random access memory is usually controlled by the injection of an externally polarized spin-current as mentioned in this paper, which can be manipulated with local fields generated by spin-orbit interactions of an unpolarized current.
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Valence-band anticrossing in mismatched III-V semiconductor alloys
K. Alberi,K. Alberi,Junqiao Wu,Junqiao Wu,Wladek Walukiewicz,Kin Man Yu,Oscar D. Dubon,Oscar D. Dubon,Simon P. Watkins,C. X. Wang,Xinyu Liu,YongJin Cho,Jacek K. Furdyna +12 more
TL;DR: In this paper, the authors show that the band gap bowing trend observed in III-V alloys containing dilute concentrations of Sb or Bi can be explained within the framework of the valence-band anticrossing model.