Jack C. Lee

TL;DR: In this article, the dielectric properties of ultrathin hafnium oxide reoxidized with rapid thermal annealing (RTA) have been investigated and the leakage current was found to be less than 3×10−2 ǫA/cm2 at −1.5 V (i.e., ∼2 V below VFB).

TL;DR: In this article, a technique of predicting the lifetime of an oxide to different voltages, different oxide areas, and different temperatures is presented using the defect density model in which defects are modeled as effective oxide thinning, many reliability parameters such as yield, failure rate and screen time/screen yield can be predicted.

TL;DR: It is shown that a silicon-based photocathode with a capping epitaxial oxide layer can provide efficient and stable hydrogen production from water and be highly dependent on the size and spacing of the structured metal catalyst.

TL;DR: In this paper, the interfacial chemistry of the high-k dielectric HfO2 has been investigated on nitrided and un-nitrided Si(100) using x-ray photoelectron spectroscopy (XPS) and secondary ion mass spectrograph (SIMS).

TL;DR: In this paper, a unique process to grow high quality ultrathin gate dielectrics using N2O (nitrous oxide) gas was presented, which showed very large charge-to-breakdown and less charge trapping under constant current stress.