Recent advances in mechanics and materials provide routes to integrated circuits that can offer the electrical properties of conventional, rigid wafer-based technologies but with the ability to be stretched, compressed, twisted, bent, and deformed into arbitrary shapes. Inorganic and organic electronic materials in microstructured and nanostructured forms, intimately integrated with elastomeric substrates, offer particularly attractive characteristics, with realistic pathways to sophisticated embodiments. Here, we review these strategies and describe applications of them in systems ranging from electronic eyeball cameras to deformable light-emitting displays. We conclude with some perspectives on routes to commercialization, new device opportunities, and remaining challenges for research.

http://science.sciencemag.org/content/sci/327/5973/1603.full.pdf

Materials and mechanics for stretchable electronics

Since the discovery of highly conducting polyacetylene by Shirakawa, MacDiarmid, and Heeger in 1977, π-conjugated systems have attracted much attention as futuristic materials for the development and production of the next generation of electronics, that is, organic electronics. Conceptually, organic electronics are quite different from conventional inorganic solid state electronics because the structural versatility of organic semiconductors allows for the incorporation of functionality by molecular design. This versatility leads to a new era in the design of electronic devices. To date, the great number of π-conjugated semiconducting materials that have either been discovered or synthesized generate an exciting library of π-conjugated systems for use in organic electronics. 11 However, some key challenges for further advancement remain: the low mobility and stability of organic semiconductors, the lack of knowledge regarding structure property relationships for understanding the fundamental chemical aspects behind the structural design, and realization of desired properties. Organic field-effect transistors (OFETs) are a kind of device consisting of an organic semiconducting layer, a gate insulator layer, and three terminals (drain, source, and gate electrodes). OFETs are not only essential building blocks for the next generation of cheap and flexible organic circuits, but they also provide an important insight into the charge transport of πconjugated systems. Therefore, they act as strong tools for the exploration of the structure property relationships of πconjugated systems, such as parameters of field-effect mobility (μ, the drift velocity of carriers under unit electric field), current on/off ratio (the ratio of the maximum on-state current to the minimum off-state current), and threshold voltage (the minimum gate voltage that is required to turn on the transistor). 17 Since the discovery of OFETs in the 1980s, they have attracted much attention. Research onOFETs includes the discovery, design, and synthesis of π-conjugated systems for OFETs, device optimization, development of applications in radio frequency identification (RFID) tags, flexible displays, electronic papers, sensors, and so forth. It is beyond the scope of this review to cover all aspects of π-conjugated systems; hence, our focus will be on the performance analysis of π-conjugated systems in OFETs. This should make it possible to extract information regarding the fundamental merit of semiconducting π-conjugated materials and capture what is needed for newmaterials and what is the synthesis orientation of newπ-conjugated systems. In fact, for a new science with many practical applications, the field of organic electronics is progressing extremely rapidly. For example, using “organic field effect transistor” or “organic field effect transistors” as the query keywords to search the Web of Science citation database, it is possible to show the distribution of papers over recent years as shown in Figure 1A. It is very clear

Semiconducting π-conjugated systems in field-effect transistors: a material odyssey of organic electronics.

Printed electronics is a revolutionary technology aimed at unconventional electronic device manufacture on plastic foils, and will probably rely on polymeric semiconductors for organic thin-film transistor (OTFT) fabrication. In addition to having excellent charge-transport characteristics in ambient conditions, such materials must meet other key requirements, such as chemical stability, large solubility in common solvents, and inexpensive solution and/or low-temperature processing. Furthermore, compatibility of both p-channel (hole-transporting) and n-channel (electron-transporting) semiconductors with a single combination of gate dielectric and contact materials is highly desirable to enable powerful complementary circuit technologies, where p- and n-channel OTFTs operate in concert. Polymeric complementary circuits operating in ambient conditions are currently difficult to realize: although excellent p-channel polymers are widely available, the achievement of high-performance n-channel polymers is more challenging. Here we report a highly soluble ( approximately 60 g l(-1)) and printable n-channel polymer exhibiting unprecedented OTFT characteristics (electron mobilities up to approximately 0.45-0.85 cm(2) V(-1) s(-1)) under ambient conditions in combination with Au contacts and various polymeric dielectrics. Several top-gate OTFTs on plastic substrates were fabricated with the semiconductor-dielectric layers deposited by spin-coating as well as by gravure, flexographic and inkjet printing, demonstrating great processing versatility. Finally, all-printed polymeric complementary inverters (with gain 25-65) have been demonstrated.

A high-mobility electron-transporting polymer for printed transistors

We report the fabrication of transparent field-effect transistors using a single-crystalline thin-film transparent oxide semiconductor, InGaO 3 (ZnO) 5 , as an electron channel and amorphous hafnium oxide as a gate insulator. The device exhibits an on-to-off current ratio of ∼10 6 and a field-effect mobility of ∼80 square centimeters per volt per second at room temperature, with operation insensitive to visible light irradiation. The result provides a step toward the realization of transparent electronics for next-generation optoelectronics.

http://science.sciencemag.org/content/sci/300/5623/1269.full.pdf

Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide Semiconductor

About Supramolecular Assemblies of π-Conjugated Systems

At present, flexible displays are an important focus of research1,2,3 Further development of large, flexible displays requires a cost-effective manufacturing process for the active-matrix backplane, which contains one transistor per pixel One way to further reduce costs is to integrate (part of) the display drive circuitry, such as row shift registers, directly on the display substrate Here, we demonstrate flexible active-matrix monochrome electrophoretic displays based on solution-processed organic transistors on 25-μm-thick polyimide substrates The displays can be bent to a radius of 1 cm without significant loss in performance Using the same process flow we prepared row shift registers With 1,888 transistors, these are the largest organic integrated circuits reported to date More importantly, the operating frequency of 5 kHz is sufficiently high to allow integration with the display operating at video speed This work therefore represents a major step towards 'system-on-plastic'

Flexible active-matrix displays and shift registers based on solution-processed organic transistors.

Operation is demonstrated of a field‐effect transistor made of transparant oxidic thin films, showing an intrinsic memory function due to the usage of a ferroelectric insulator. The device consists of a high mobility Sb‐doped n‐type SnO2 semiconductor layer, PbZr0.2Ti0.8O3 as a ferroelectric insulator, and SrRuO3 as a gate electrode, each layer prepared by pulsed laser deposition. The hysteresis behavior of the channel conductance is studied. Using gate voltage pulses of 100 μs duration and a pulse height of ±3 V, a change of a factor of two in the remnant conductance is achieved. The dependence of the conductance on the polarity of the gate pulse proves that the memory effect is driven by the ferroelectric polarization. The influence of charge trapping is also observed and discussed.

/pdf/a-ferroelectric-transparent-thin-film-transistor-t882w75h4s.pdf

A ferroelectric transparent thin‐film transistor

We present a study of electrical characteristics of ferroelectric field-effect transistors made of PbZr0.2Ti0.8O3 and SnO2:Sb thin films. Due to properly chosen semiconductor parameters, the transistor channel can be totally depleted by the ferroelectric charge displacement. The observed remnant on/off ratio of the channel current amounts to 7×103. Pulse response measurements give information on data retention, device speed, and the occurrence of charge injection. The results lead to important design considerations for ferroelectric transistors.

/pdf/depletion-type-thin-film-transistors-with-a-ferroelectric-4pebm6wt7x.pdf

Depletion-type thin-film transistors with a ferroelectric insulator

The invention relates to a method of manufacturing a microsystem and further to such microsystem. With the method a microsystem can be manufactured by stacking pre-processed foils (10) having a conductive layer (l la,l lb) on at least one side. After stacking, the foils (10) are sealed, using pressure and heat. Finally the microsystems are separated from the stack (S). The pre-processing of the foils (preferably done by means of a laser beam) comprises a selection of the following steps: (A) leaving the foil intact, (B) locally removing the conductive layer, (C) removing the conductive layer and partially evaporating the foil (10), and (D) removing both the conductive layer as well as foil (10), thus making holes in the foil (10). In combination with said stacking, it is possible to create cavities, freely suspended cantilevers and membranes. This opens up the possibility of manufacturing various microsystems, like MEMS devices and microfluidic systems.

A method of manufacturing a microsystem, such a microsystem, a stack of foils comprising such a microsystem, an electronic device comprising such a microsystem and use of the electronic device

Method of manufacturing a magnetic head, in which a transducing structure (1) comprising at least a transducing element (5) is formed on a substrate (3) by means of a thin-film technique, after which a thick film coating (23) is provided on an uneven surface (21), remote from the substrate, of the structure formed. The thick film has a thickness which is minimally equal to the distance between an area (21A) of said surface which is farthest remote from the substrate and an area (21B) which is most proximate to the substrate and is deposited on said surface by means of PE-CVD.

Jacobus Bernardus Giesbers

Papers

Flexible active-matrix displays and shift registers based on solution-processed organic transistors.

A ferroelectric transparent thin‐film transistor

Depletion-type thin-film transistors with a ferroelectric insulator

A method of manufacturing a microsystem, such a microsystem, a stack of foils comprising such a microsystem, an electronic device comprising such a microsystem and use of the electronic device

Method of manufacturing a magnetic head