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Author

Jae-Sung Rieh

Other affiliations: IBM, LSI Corporation, University of Michigan  ...read more
Bio: Jae-Sung Rieh is an academic researcher from Korea University. The author has contributed to research in topics: Heterojunction bipolar transistor & CMOS. The author has an hindex of 30, co-authored 221 publications receiving 3315 citations. Previous affiliations of Jae-Sung Rieh include IBM & LSI Corporation.


Papers
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Journal ArticleDOI
TL;DR: In this paper, a SiGe NPN HBT with unity gain cutoff frequency (f/sub T/) of 207 GHz and an f/sub MAX/ extrapolated from Mason's unilateral gain of 285 GHz was reported.
Abstract: This paper reports on SiGe NPN HBTs with unity gain cutoff frequency (f/sub T/) of 207 GHz and an f/sub MAX/ extrapolated from Mason's unilateral gain of 285 GHz. f/sub MAX/ extrapolated from maximum available gain is 194 GHz. Transistors sized 0.12/spl times/2.5 /spl mu/m/sup 2/ have these characteristics at a linear current of 1.0 mA//spl mu/m (8.3 mA//spl mu/m/sup 2/). Smaller transistors (0.12/spl times/0.5 /spl mu/m/sup 2/) have an f/sub T/ of 180 GHz at 800 /spl mu/A current. The devices have a pinched base sheet resistance of 2.5 k/spl Omega//sq. and an open-base breakdown voltage BV/sub CEO/ of 1.7 V. The improved performance is a result of a new self-aligned device structure that minimizes parasitic resistance and capacitance without affecting f/sub T/ at small lateral dimensions.

266 citations

Proceedings ArticleDOI
08 Dec 2002
TL;DR: In this paper, the SiGe HBTs with f/sub T/ of 350 GHz were reported, which is the highest reported f/Sub T/ for any Si-based transistor as well as any bipolar transistor.
Abstract: This work reports on SiGe HBTs with f/sub T/ of 350 GHz. This is the highest reported f/sub T/ for any Si-based transistor as well as any bipolar transistor. Associated f/sub max/ is 170 GHz, and BV/sub CEO/ and BV/sub CBO/ are measured to be 1.4 V and 5.0 V, respectively. Also achieved was the simultaneous optimization of f/sub T/ and f/sub max/ resulting in 270 GHz and 260 GHz, with BV/sub CEO/ and BV/sub CBO/ of 1.6 V and 5.5 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f/sub T/ and f/sub max/ values are also discussed.

196 citations

Proceedings ArticleDOI
13 Dec 2004
TL;DR: In this article, the SiGe HBT technology with f/sub max/ and F/sub T/ of 350 GHz and 300 GHz, respectively, and a gate delay below 33 ps is reported.
Abstract: This work reports on SiGe HBT technology with f/sub max/ and f/sub T/ of 350 GHz and 300 GHz, respectively, and a gate delay below 33 ps This is the highest reported speed for any Si-based transistor in terms of combined performance of f/sub max/ and f/sub T/ both of which exhibit 300 GHz and above Associated BV/sub CEO/ and BV/sub CBO/ are measured to be 17 V and 56 V, respectively The dependence of device performance on bias condition and device dimension has been investigated Considerations regarding the extraction of such high f/sub max/ and f/sub T/ values are also discussed

133 citations

Journal ArticleDOI
TL;DR: In this paper, a 0.1 μm LT-Si buffer was used to reduce threading dislocation density in mismatched Si0.85Ge0.15/Si epitaxial layers as low as ∼104 cm−2.
Abstract: The reduction of the dislocation density in relaxed SiGe/Si heterostructures using a low-temperature Si(LT-Si) buffer has been investigated. We have shown that a 0.1 μm LT-Si buffer reduces the threading dislocation density in mismatched Si0.85Ge0.15/Si epitaxial layers as low as ∼104 cm−2. Samples were grown by both gas-source molecular beam epitaxy and ultrahigh vacuum chemical vapor deposition.

122 citations

Journal ArticleDOI
TL;DR: In this paper, the first demonstration of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) capable of operation above the one-half terahertz (500 GHz) frequency was presented.
Abstract: This letter presents the first demonstration of a silicon-germanium heterojunction bipolar transistor (SiGe HBT) capable of operation above the one-half terahertz (500 GHz) frequency. An extracted peak unity gain cutoff frequency (f/sub T/) of 510 GHz at 4.5 K was measured for a 0.12/spl times/1.0 /spl mu/m/sup 2/ SiGe HBT (352 GHz at 300 K) at a breakdown voltage BV/sub CEO/ of 1.36 V (1.47 V at 300 K), yielding an f/sub T//spl times/BV/sub CEO/ product of 693.6 GHz-V at 4.5 K (517.4 GHz-V at 300 K).

113 citations


Cited by
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Journal ArticleDOI

[...]

08 Dec 2001-BMJ
TL;DR: There is, I think, something ethereal about i —the square root of minus one, which seems an odd beast at that time—an intruder hovering on the edge of reality.
Abstract: There is, I think, something ethereal about i —the square root of minus one. I remember first hearing about it at school. It seemed an odd beast at that time—an intruder hovering on the edge of reality. Usually familiarity dulls this sense of the bizarre, but in the case of i it was the reverse: over the years the sense of its surreal nature intensified. It seemed that it was impossible to write mathematics that described the real world in …

33,785 citations

Book
Yuan Taur1, Tak H. Ning1
01 Jan 2016
TL;DR: In this article, the authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices.
Abstract: Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally-renowned authors highlight the intricate interdependencies and subtle tradeoffs between various practically important device parameters, and also provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model, and SiGe-base bipolar devices.

2,680 citations

Patent
01 Aug 2008
TL;DR: In this article, the oxide semiconductor film has at least a crystallized region in a channel region, which is defined as a region of interest (ROI) for a semiconductor device.
Abstract: An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region.

1,501 citations

Journal ArticleDOI
TL;DR: In this paper, the authors provide background and an overview of the state of the art of millimeter-wave technology for automotive radar applications, including two actual silicon based fully integrated radar chips.
Abstract: The market for driver assistance systems based on millimeter-wave radar sensor technology is gaining momentum. In the near future, the full range of newly introduced car models will be equipped with radar based systems which leads to high volume production with low cost potential. This paper provides background and an overview of the state of the art of millimeter-wave technology for automotive radar applications, including two actual silicon based fully integrated radar chips. Several advanced packaging concepts and antenna systems are presented and discussed in detail. Finally measurement results of the fully integrated radar front ends are shown.

1,095 citations

Journal ArticleDOI
TL;DR: A review of the history and current progress in highmobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field effect transistors (MOSFETs) can be found in this article.
Abstract: This article reviews the history and current progress in high-mobility strained Si, SiGe, and Ge channel metal-oxide-semiconductor field-effect transistors (MOSFETs). We start by providing a chronological overview of important milestones and discoveries that have allowed heterostructures grown on Si substrates to transition from purely academic research in the 1980’s and 1990’s to the commercial development that is taking place today. We next provide a topical review of the various types of strain-engineered MOSFETs that can be integrated onto relaxed Si1−xGex, including surface-channel strained Si n- and p-MOSFETs, as well as double-heterostructure MOSFETs which combine a strained Si surface channel with a Ge-rich buried channel. In all cases, we will focus on the connections between layer structure, band structure, and MOS mobility characteristics. Although the surface and starting substrate are composed of pure Si, the use of strained Si still creates new challenges, and we shall also review the litera...

918 citations