Jaehyuck Jung

Bio: Jaehyuck Jung is an academic researcher from Sungkyunkwan University. The author has contributed to research in topics: Graphene & Field-effect transistor. The author has an hindex of 8, co-authored 11 publications receiving 375 citations.

Low‐Temperature Synthesis of Large‐Scale Molybdenum Disulfide Thin Films Directly on a Plastic Substrate Using Plasma‐Enhanced Chemical Vapor Deposition

Abstract: By plasma-enhanced chemical vapor deposition, a molybdenum disulfide (MoS2 ) thin film is synthesized directly on a wafer-scale plastic substrate at below 300 °C. The carrier mobility of the films is 3.74 cm(2) V(-1) s(-1) . Also, humidity is successfully detected with MoS2 -based sensors fabricated on the flexible substrate, which reveals its potential for flexible sensing devices.

Field-effect transistor with a chemically synthesized MoS2 sensing channel for label-free and highly sensitive electrical detection of DNA hybridization

Abstract: A field-effect transistor (FET) with two-dimensional (2D) few-layer MoS2 as a sensing-channel material was investigated for label-free electrical detection of the hybridization of deoxyribonucleic acid (DNA) molecules. The high-quality MoS2-channel pattern was selectively formedthrough the chemical reaction of the Mo layer with H2S gas. The MoS2 FET was very stable in an electrolyte and inert to pH changes due to the lack of oxygen-containing functionalities on the MoS2 surface. Hybridization of single-stranded target DNA molecules with single-stranded probe DNA molecules physically adsorbed on the MoS2 channel resulted in a shift of the threshold voltage (V th) in the negative direction and an increase in the drain current. The negative shift in V th is attributed to electrostatic gating effects induced by the detachment of negatively charged probe DNA molecules from the channel surface after hybridization. A detection limit of 10 fM, high sensitivity of 17 mV/dec, and high dynamic range of 106 were achieved. The results showed that a bio-FET with an ultrathin 2D MoS2 channel can be used to detect very small concentrations of target DNA molecules specifically hybridized with the probe DNA molecules.

Multifunctional van der Waals Broken-Gap Heterojunction

Abstract: The finite energy band-offset that appears between band structures of employed materials in a broken-gap heterojunction exhibits several interesting phenomena. Here, by employing a black phosphorus (BP)/rhenium disulfide (ReS2 ) heterojunction, the tunability of the BP work function (Φ BP ) with variation in flake thickness is exploited in order to demonstrate that a BP-based broken-gap heterojunction can manifest diverse current-transport characteristics such as gate tunable rectifying p-n junction diodes, Esaki diodes, backward-rectifying diodes, and nonrectifying devices as a consequence of diverse band-bending at the heterojunction. Diversity in band-bending near heterojunction is attributed to change in the Fermi level difference (Δ) between BP and ReS2 sides as a consequence of Φ BP modulation. No change in the current transport characteristics in several devices with fixed Δ also provides further evidence that current-transport is substantially impacted by band-bending at the heterojunction. Optoelectronic experiments on the Esaki diode and the p-n junction diode provide experimental evidence of band-bending diversity. Additionally, the p+ -n-p junction comprising BP (38 nm)/ReS2 /BP(5.8 nm) demonstrates multifunctionality of binary and ternary inverters as well as exhibiting the behavior of a bipolar junction transistor with common-emitter current gain up to 50.

Van der Waals Broken-Gap p-n Heterojunction Tunnel Diode Based on Black Phosphorus and Rhenium Disulfide.

Abstract: The broken-gap (type III) van der Waals heterojunction is of particular interest, as there is no overlap between energy bands of its two stacked materials. Despite several studies on straddling-gap (type I) and staggered-gap (type II) vdW heterojunctions, comprehensive understanding of current transport and optoelectronic effects in a type-III heterojunction remains elusive. Here, we report gate-tunable current rectifying characteristics in a black phosphorus (BP)/rhenium disulfide (ReS2) type-III p–n heterojunction diode. Current transport in this heterojunction was modeled using the Simmons approximation through direct tunneling and Fowler–Nordheim tunneling in lower- and higher-bias regimes, respectively. We showed that a p–n diode based on a type-III heterojunction is mainly governed by tunneling-mediated transport, but that transport in a type-I p–n heterojunction is dominated by majority carrier diffusion in the higher-bias regime. Upon illumination with a 532 nm wavelength laser, the BP/ReS2 type-I...

Large-area niobium disulfide thin films as transparent electrodes for devices based on two-dimensional materials

Abstract: Direct contacts of a metal with atomically thin two-dimensional (2D) transition metal dichalcogenide (TMDC) semiconductors have been found to suppress device performance by producing a high contact resistance. NbS2 is a 2D TMDC and a conductor. It is expected to form ohmic contacts with 2D semiconductors because of its high work function and the van der Waals interface it forms with the semiconductor, with such an interface resulting in weak Fermi level pinning. Despite the usefulness of NbS2 as an electrode, previous synthesis methods could not control the thickness, uniformity, and shape of the NbS2 film and hence could not find practical applications in electronics. Here, we report a patternable method for carrying out the synthesis of NbS2 films in which the number of NbS2 layers formed over a large area was successfully controlled, which is necessary for the production of customized electrodes. The synthesized NbS2 films were shown to be highly transparent and uniform in thickness and conductivity over the large area. Furthermore, the synthesized NbS2 showed half the contact resistance than did the molybdenum metal in MoS2 field effect transistors (FETs) on a large transparent quartz substrate. The MoS2 device with NbS2 showed an electron mobility as high as 12.7 cm2 V-1 s-1, which was three times higher than that found for the corresponding molybdenum-contacted MoS2 device. This result showed the high potential of the NbS2 thin film as a transparent electrode for 2D transition metal dichalcogenide (TMDC) semiconductors with low contact resistance.

Recent advances in metal sulfides: from controlled fabrication to electrocatalytic, photocatalytic and photoelectrochemical water splitting and beyond

Abstract: In recent years, nanocrystals of metal sulfide materials have attracted scientific research interest for renewable energy applications due to the abundant choice of materials with easily tunable electronic, optical, physical and chemical properties. Metal sulfides are semiconducting compounds where sulfur is an anion associated with a metal cation; and the metal ions may be in mono-, bi- or multi-form. The diverse range of available metal sulfide materials offers a unique platform to construct a large number of potential materials that demonstrate exotic chemical, physical and electronic phenomena and novel functional properties and applications. To fully exploit the potential of these fascinating materials, scalable methods for the preparation of low-cost metal sulfides, heterostructures, and hybrids of high quality must be developed. This comprehensive review indicates approaches for the controlled fabrication of metal sulfides and subsequently delivers an overview of recent progress in tuning the chemical, physical, optical and nano- and micro-structural properties of metal sulfide nanocrystals using a range of material fabrication methods. For hydrogen energy production, three major approaches are discussed in detail: electrocatalytic hydrogen generation, powder photocatalytic hydrogen generation and photoelectrochemical water splitting. A variety of strategies such as structural tuning, composition control, doping, hybrid structures, heterostructures, defect control, temperature effects and porosity effects on metal sulfide nanocrystals are discussed and how they are exploited to enhance performance and develop future energy materials. From this literature survey, energy conversion currently relies on a limited range of metal sulfides and their composites, and several metal sulfides are immature in terms of their dissolution, photocorrosion and long-term durability in electrolytes during water splitting. Future research directions for innovative metal sulfides should be closely allied to energy and environmental issues, along with their advanced characterization, and developing new classes of metal sulfide materials with well-defined fabrication methods.

Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides.

Abstract: Electrical metal contacts to two-dimensional (2D) semiconducting transition metal dichalcogenides (TMDCs) are found to be the key bottleneck to the realization of high device performance due to strong Fermi level pinning and high contact resistances (Rc). Until now, Fermi level pinning of monolayer TMDCs has been reported only theoretically, although that of bulk TMDCs has been reported experimentally. Here, we report the experimental study on Fermi level pinning of monolayer MoS2 and MoTe2 by interpreting the thermionic emission results. We also quantitatively compared our results with the theoretical simulation results of the monolayer structure as well as the experimental results of the bulk structure. We measured the pinning factor S to be 0.11 and −0.07 for monolayer MoS2 and MoTe2, respectively, suggesting a much stronger Fermi level pinning effect, a Schottky barrier height (SBH) lower than that by theoretical prediction, and interestingly similar pinning energy levels between monolayer and bulk Mo...

Electrically-Transduced Chemical Sensors Based on Two-Dimensional Nanomaterials

Abstract: Electrically–transduced sensors, with their simplicity and compatibility with standard electronic technologies, produce signals that can be efficiently acquired, processed, stored, and analyzed. Two dimensional (2D) nanomaterials, including graphene, phosphorene (BP), transition metal dichalcogenides (TMDCs), and others, have proven to be attractive for the fabrication of high–performance electrically-transduced chemical sensors due to their remarkable electronic and physical properties originating from their 2D structure. This review highlights the advances in electrically-transduced chemical sensing that rely on 2D materials. The structural components of such sensors are described, and the underlying operating principles for different types of architectures are discussed. The structural features, electronic properties, and surface chemistry of 2D nanostructures that dictate their sensing performance are reviewed. Key advances in the application of 2D materials, from both a historical and analytical pers...

Chemical sensing with 2D materials

Abstract: During the last decade, two-dimensional materials (2DMs) have attracted great attention due to their unique chemical and physical properties, which make them appealing platforms for diverse applications in opto-electronic devices, energy generation and storage, and sensing. Among their various extraordinary properties, 2DMs possess high surface area-to-volume ratios and ultra-high surface sensitivity to the environment, which are key characteristics for applications in chemical sensing. Furthermore, 2DMs’ superior electrical and optical properties, combined with their excellent mechanical characteristics such as robustness and flexibility, make these materials ideal components for the fabrication of a new generation of high-performance chemical sensors. Depending on the specific device, 2DMs can be tailored to interact with various chemical species at the non-covalent level, making them powerful platforms for fabricating devices exhibiting a high sensitivity towards detection of various analytes including gases, ions and small biomolecules. Here, we will review the most enlightening recent advances in the field of chemical sensors based on atomically-thin 2DMs and we will discuss the opportunities and the challenges towards the realization of novel hybrid materials and sensing devices.

Two-dimensional nanomaterial-based field-effect transistors for chemical and biological sensing

Abstract: Meeting the increasing demand for sensors with high sensitivity, high selectivity, and rapid detection presents many challenges In the last decade, electronic sensors based on field-effect transistors (FETs) have been widely studied due to their high sensitivity, rapid detection, and simple test procedure Among these sensors, two-dimensional (2D) nanomaterial-based FET sensors have been demonstrated with tremendous potential for the detection of a wide range of analytes which is attributed to the unique structural and electronic properties of 2D nanomaterials This comprehensive review discusses the recent progress in graphene-, 2D transition metal dichalcogenide-, and 2D black phosphorus-based FET sensors, with an emphasis on rapid and low-concentration detection of gases, biomolecules, and water contaminants