Jaeyoon Baik

TL;DR: Laser-induced phase patterning is used to fabricate an ohmic heterophase homojunction between semiconducting hexagonal and metallic monoclinic molybdenum ditelluride that is stable up to 300°C and increases the carrier mobility of the MoTe2 transistor by a factor of about 50, while retaining a high on/off current ratio of 106.

TL;DR: This method has overcome two important hurdles previously present when the catalyst-free CVD process is used for the growth of SLG on fused quartz and hexagonal boron nitride substrates, that is, high degree of structural defects and limited size of resulting graphene, respectively.

TL;DR: The WV- rich domain with deep-trap states reveals an electron-dedoping effect, and the electron mobility and photoluminescence are lower than those of the SV-rich domain with shallow-donor states by one order of magnitude.

TL;DR: This work reports a method for the synthesis of centimeter-scale, high-quality single-layer MoS2 that can be directly patterned during CVD, so that postpatterning processes can be avoided and device fabrication can be streamlined.

TL;DR: A novel way to grow MoS2 on a large scale with uniformity and in desired patterns is developed using Au film as a catalyst on which [Mo(CO)6 ] vapor decomposes to form a Mo-Au surface alloy.