James C. Tsang

TL;DR: Electrical measurements show that the observed optical emission originates from radiative recombination of electrons and holes that are simultaneously injected into the undoped nanotubes, consistent with a nanotube FET model in which thin Schottky barriers form at the source and drain contacts.

TL;DR: It is shown that at a certain gate bias, the impact of the metal on the channel potential profile extends into the channel for more than one-third of the total channel length from both source and drain sides; hence, most of the channel is affected by the metal.

TL;DR: In this article, the infrared absorption from molecular monolayers is enhanced by thin metal overlayers or underlayers with use of the attenuated-total-reflection technique, which is consistent with an electric field enhancement due to collective electron resonances associated with the island nature of the thin metal films.

TL;DR: Simulations based on nonequilibrium Green's function formalism suggest that the origin of this asymmetry in transport in graphene devices doped with poly(ethylene imine) and diazonium salts is imbalanced carrier injection from the graphene electrodes caused by misalignment of the electrode and channel neutrality points.

TL;DR: In this paper, a near-field scanning optical microscope is used to induce photocurrent in a graphene transistor with high spatial resolution, and the authors find that in the $n$-type conduction regime a $p\text{\ensuremath{-n\text{-p$ structure forms along the graphene device due to the doping of the graphene by the metal contacts.