J
James D. Meindl
Researcher at Georgia Institute of Technology
Publications - 241
Citations - 10439
James D. Meindl is an academic researcher from Georgia Institute of Technology. The author has contributed to research in topics: CMOS & MOSFET. The author has an hindex of 50, co-authored 241 publications receiving 10126 citations.
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Impact of die-to-die and within-die parameter fluctuations on the maximum clock frequency distribution for gigascale integration
TL;DR: In this paper, a model describing the maximum clock frequency distribution of a microprocessor is derived and compared with wafer sort data for a recent 0.25-/spl mu/m microprocessor.
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The impact of intrinsic device fluctuations on CMOS SRAM cell stability
TL;DR: In this paper, the reduction in CMOS SRAM cell static noise margin due to intrinsic threshold voltage fluctuations in uniformly doped minimum-geometry cell MOSFETs is investigated using compact physical and stochastic models.
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Breakdown Current Density of Graphene Nano Ribbons
TL;DR: In this article, the breakdown current density of GNRs with widths down to 16 nm has been characterized and shown to have a reciprocal relationship to GNR resistivity and the data fit points to Joule heating as the likely mechanism of breakdown.
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Breakdown current density of graphene nanoribbons
TL;DR: In this article, the breakdown current density of GNRs with widths down to 16 nm has been characterized and shown to have a reciprocal relationship to GNR resistivity and the data fit points to Joule heating as the likely mechanism of breakdown.
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Limits on Silicon Nanoelectronics for Terascale Integration
TL;DR: Analysis of fundamental, material, device, circuit, and system limits reveals that silicon technology has an enormous remaining potential to achieve terascale integration (TSI) of more than 1 trillion transistors per chip.