James Hone

Bio: James Hone is an academic researcher from Columbia University. The author has contributed to research in topics: Graphene & Monolayer. The author has an hindex of 127, co-authored 637 publications receiving 108193 citations. Previous affiliations of James Hone include DARPA & Santa Fe Institute.

Thermal conductivity of single-walled carbon nanotubes

Abstract: We have measured the temperature-dependent thermal conductivity $\ensuremath{\kappa}(T)$ of crystalline ropes of single-walled carbon nanotubes from 350 K to 8 K. $\ensuremath{\kappa}(T)$ decreases smoothly with decreasing temperature, and displays linear temperature dependence below 30 K. Comparison with electrical conductivity experiments indicates that the room-temperature thermal conductivity of a single nanotube may be comparable to that of diamond or in-plane graphite, while the ratio of thermal to electrical conductance for a given sample indicates that the thermal conductivity is dominated by phonons at all temperatures. Below 30 K, the linear temperature dependence and estimated magnitude of $\ensuremath{\kappa}(T)$ imply an energy-independent phonon mean free path of \ensuremath{\sim}0.5--1.5 \ensuremath{\mu}m.

Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform.

Abstract: High charge-carrier mobility that enables the observation of quantum oscillation is reported in mono- and few-layer MoS2 encapsulated and contacted by other two-dimensional materials.

Temperature-dependent transport in suspended graphene.

Abstract: The resistivity of ultraclean suspended graphene is strongly temperature ($T$) dependent for $5lTl240\text{ }\text{ }\mathrm{K}$ At $T\ensuremath{\sim}5\text{ }\text{ }\mathrm{K}$ transport is near-ballistic in a device of $\ensuremath{\sim}2\text{ }\text{ }\ensuremath{\mu}\mathrm{m}$ dimension and a mobility $\ensuremath{\sim}170\text{ }000\text{ }\text{ }{\mathrm{cm}}^{2}/\mathrm{V}\text{ }\mathrm{s}$ At large carrier density, $ng05\ifmmode\times\else\texttimes\fi{}{10}^{11}\text{ }\text{ }{\mathrm{cm}}^{\ensuremath{-}2}$, the resistivity increases with increasing $T$ and is linear above 50 K, suggesting carrier scattering from acoustic phonons At $T=240\text{ }\text{ }\mathrm{K}$ the mobility is $\ensuremath{\sim}120\text{ }000\text{ }\text{ }{\mathrm{cm}}^{2}/\mathrm{V}\text{ }\mathrm{s}$, higher than in any known semiconductor At the charge neutral point we observe a nonuniversal conductivity that decreases with decreasing $T$, consistent with a density inhomogeneity $l{10}^{8}\text{ }\text{ }{\mathrm{cm}}^{\ensuremath{-}2}$

Measurement of the optical dielectric function of monolayer transition-metal dichalcogenides: MoS 2 , Mo S e 2 , WS 2 , and WS e 2

Abstract: This chapter presents the complex in-plane dielectric function from 1.5 to 3 eV for monolayers of four transition metal dichalcogenides: MoSe2, WSe2, MoS2, and WS2. The results were obtained from optical reflection spectra using a Kramers–Kronig constrained variational analysis. From the inferred dielectric functions, we obtain the absolute absorbance of the monolayers. We also provide a comparison of the dielectric function for the monolayers with the respective bulk materials [1].

Chip-integrated ultrafast graphene photodetector with high responsivity

Abstract: A chip-integrated graphene photodetector with a high responsivity of over 0.1 A W−1, high speed and broad spectral bandwidth is realized through enhanced absorption due to near-field coupling. Under zero-bias operation, response rates above 20 GHz and an instrumentation-limited 12 Gbit s−1 optical data link are demonstrated.

Fast parallel algorithms for short-range molecular dynamics

Abstract: Three parallel algorithms for classical molecular dynamics are presented. The first assigns each processor a fixed subset of atoms; the second assigns each a fixed subset of inter-atomic forces to compute; the third assigns each a fixed spatial region. The algorithms are suitable for molecular dynamics models which can be difficult to parallelize efficiently—those with short-range forces where the neighbors of each atom change rapidly. They can be implemented on any distributed-memory parallel machine which allows for message-passing of data between independently executing processors. The algorithms are tested on a standard Lennard-Jones benchmark problem for system sizes ranging from 500 to 100,000,000 atoms on several parallel supercomputers--the nCUBE 2, Intel iPSC/860 and Paragon, and Cray T3D. Comparing the results to the fastest reported vectorized Cray Y-MP and C90 algorithm shows that the current generation of parallel machines is competitive with conventional vector supercomputers even for small problems. For large problems, the spatial algorithm achieves parallel efficiencies of 90% and a 1840-node Intel Paragon performs up to 165 faster than a single Cray C9O processor. Trade-offs between the three algorithms and guidelines for adapting them to more complex molecular dynamics simulations are also discussed.

疟原虫var基因转换速率变化导致抗原变异[英]／Paul H, Robert P, Christodoulou Z, et al//Proc Natl Acad Sci U S A

Abstract: 抗原变异可使得多种致病微生物易于逃避宿主免疫应答。表达在感染红细胞表面的恶性疟原虫红细胞表面蛋白1（PfPMP1）与感染红细胞、内皮细胞、树突状细胞以及胎盘的单个或多个受体作用，在黏附及免疫逃避中起关键的作用。每个单倍体基因组var基因家族编码约60种成员，通过启动转录不同的var基因变异体为抗原变异提供了分子基础。

Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.

Abstract: Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.

Atomically thin MoS2: a new direct-gap semiconductor

Abstract: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy Through characterization by absorption, photoluminescence, and photoconductivity spectroscopy, we trace the effect of quantum confinement on the material's electronic structure With decreasing thickness, the indirect band gap, which lies below the direct gap in the bulk material, shifts upwards in energy by more than 06 eV This leads to a crossover to a direct-gap material in the limit of the single monolayer Unlike the bulk material, the MoS₂ monolayer emits light strongly The freestanding monolayer exhibits an increase in luminescence quantum efficiency by more than a factor of 10⁴ compared with the bulk material