James W. Mayer

Bio: James W. Mayer is an academic researcher from Arizona State University. The author has contributed to research in topics: Silicon & Ion implantation. The author has an hindex of 74, co-authored 405 publications receiving 21245 citations. Previous affiliations of James W. Mayer include Los Alamos National Laboratory & University of California, San Diego.

Ion implantation in semiconductors

Abstract: Ion implantation is being applied extensively to silicon device technology. Two principle features are utilized- 1) charge control in MOS structures for threshold shift, autoregistration, and complementary wells and 2) distribution control in microwave and bipolar structures. Another feature that has not been extensively exploited is to combine the advantages of the high resolution capabilities of electric beam pattern delineation with the low lateral spread inherent in the implantation process. This talk reviews some of the general features of the characteristics of implanted layers in terms of depth distribution, radiation damage and electron activity. Implantation processes in silicon are reasonably well understood. There remain areas which require further clarification. For compound semiconductors, particularly GaAs, implantation techniques offer attractive possibilities for the fabrication of high frequency devices. In these materials, the substrate temperature during implantation and the dielectric coating required to prevent dissociation during thermal anneal play major roles.

Ion Implantation in Semiconductors

Abstract: Ion implantation is being applied extensively to silicon device technology. Two principle features are utilized- 1) charge control in MOS structures for threshold shift, autoregistration, and complementary wells and 2) distribution control in microwave and bipolar structures. Another feature that has not been extensively exploited is to combine the advantages of the high resolution capabilities of electric beam pattern delineation with the low lateral spread inherent in the implantation process. This talk reviews some of the general features of the characteristics of implanted layers in terms of depth distribution, radiation damage and electron activity. Implantation processes in silicon are reasonably well understood. There remain areas which require further clarification. For compound semiconductors, particularly GaAs, implantation techniques offer attractive possibilities for the fabrication of high frequency devices. In these materials, the substrate temperature during implantation and the dielectric coating required to prevent dissociation during thermal anneal play major roles.

Ion-Solid Interactions: Fundamentals and Applications

Abstract: 1. General features and fundamental concepts 2. Interatomic potentials 3. Dynamics of binary elastic collisions 4. Cross-section 5. Ion stopping 6. Ion range and range distribution 7. Radiation damage and spikes 8. Ion-solid simulations and irradiation enhanced transport 9. Sputtering 10. Order-disorder under irradiation and ion implantation metallurgy 11. Ion beam mixing 12. Phase transformations 13. Ion beam assisted deposition 14. Applications of ion beam processing techniques 15. Ion beam system features Appendices: A. Crystallography B. Table of contents C. Density of states D. Derivation of the Thomas-Fermi differential equations E. Centre-of-mass and laboratory scattering angles F. Miedema's semi-empirical model for the enthalpy of formation in the liquid and solid state G. Implantation metallurgy - study of equilibrium alloys.

Formation of glasses from liquids and biopolymers.

Abstract: Glasses can be formed by many routes. In some cases, distinct polyamorphic forms are found. The normal mode of glass formation is cooling of a viscous liquid. Liquid behavior during cooling is classified between "strong" and "fragile," and the three canonical characteristics of relaxing liquids are correlated through the fragility. Strong liquids become fragile liquids on compression. In some cases, such conversions occur during cooling by a weak first-order transition. This behavior can be related to the polymorphism in a glass state through a recent simple modification of the van der Waals model for tetrahedrally bonded liquids. The sudden loss of some liquid degrees of freedom through such first-order transitions is suggestive of the polyamorphic transition between native and denatured hydrated proteins, which can be interpreted as single-chain glass-forming polymers plasticized by water and cross-linked by hydrogen bonds. The onset of a sharp change in d dT( is the Debye-Waller factor and T is temperature) in proteins, which is controversially indentified with the glass transition in liquids, is shown to be general for glass formers and observable in computer simulations of strong and fragile ionic liquids, where it proves to be close to the experimental glass transition temperature. The latter may originate in strong anharmonicity in modes ("bosons"), which permits the system to access multiple minima of its configuration space. These modes, the Kauzmann temperature T(K), and the fragility of the liquid, may thus be connected.

Soft Lithography in Biology and Biochemistry

Abstract: ▪ Abstract Soft lithography, a set of techniques for microfabrication, is based on printing and molding using elastomeric stamps with the patterns of interest in bas-relief. As a technique for fabricating microstructures for biological applications, soft lithography overcomes many of the shortcomings of photolithography. In particular, soft lithography offers the ability to control the molecular structure of surfaces and to pattern the complex molecules relevant to biology, to fabricate channel structures appropriate for microfluidics, and to pattern and manipulate cells. For the relatively large feature sizes used in biology (≥50 μm), production of prototype patterns and structures is convenient, inexpensive, and rapid. Self-assembled monolayers of alkanethiolates on gold are particularly easy to pattern by soft lithography, and they provide exquisite control over surface biochemistry.

Metal-Assisted Chemical Etching of Silicon: A Review

Abstract: This article presents an overview of the essential aspects in the fabrication of silicon and some silicon/germanium nanostructures by metal-assisted chemical etching. First, the basic process and mechanism of metal-assisted chemical etching is introduced. Then, the various influences of the noble metal, the etchant, temperature, illumination, and intrinsic properties of the silicon substrate (e.g., orientation, doping type, doping level) are presented. The anisotropic and the isotropic etching behaviors of silicon under various conditions are presented. Template-based metal-assisted chemical etching methods are introduced, including templates based on nanosphere lithography, anodic aluminum oxide masks, interference lithography, and block-copolymer masks. The metal-assisted chemical etching of other semiconductors is also introduced. A brief introduction to the application of Si nanostructures obtained by metal-assisted chemical etching is given, demonstrating the promising potential applications of metal-assisted chemical etching. Finally, some open questions in the understanding of metal-assisted chemical etching are compiled.

Stretchable form of single crystal silicon for high performance electronics on rubber substrates

Abstract: The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.