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Principles Of Optics Electromagnetic Theory Of Propagation Interference And Diffraction Of Light

The present invention provides stretchable, and optionally printable, semiconductors and electronic circuits capable of providing good performance when stretched, compressed, flexed or otherwise deformed. Stretchable semiconductors and electronic circuits of the present invention preferred for some applications are flexible, in addition to being stretchable, and thus are capable of significant elongation, flexing, bending or other deformation along one or more axes. Further, stretchable semiconductors and electronic circuits of the present invention may be adapted to a wide range of device configurations to provide fully flexible electronic and optoelectronic devices.

http://science.sciencemag.org/content/sci/311/5758/208.full.pdf

Stretchable form of single crystal silicon for high performance electronics on rubber substrates

The present invention provides methods, systems and system components for transferring, assembling and integrating features and arrays of features having selected nanosized and/or microsized physical dimensions, shapes and spatial orientations. Methods of the present invention utilize principles of ‘soft adhesion’ to guide the transfer, assembly and/or integration of features, such as printable semiconductor elements or other components of electronic devices. Methods of the present invention are useful for transferring features from a donor substrate to the transfer surface of an elastomeric transfer device and, optionally, from the transfer surface of an elastomeric transfer device to the receiving surface of a receiving substrate. The present methods and systems provide highly efficient, registered transfer of features and arrays of features, such as printable semiconductor element, in a concerted manner that maintains the relative spatial orientations of transferred features.

Pattern Transfer Printing by Kinetic Control of Adhesion to an Elastomeric Stamp

The present invention provides device components geometries and fabrication strategies for enhancing the electronic performance of electronic devices based on thin films of randomly oriented or partially aligned semiconducting nanotubes. In certain aspects, devices and methods of the present invention incorporate a patterned layer of randomly oriented or partially aligned carbon nanotubes, such as one or more interconnected SWNT networks, providing a semiconductor channel exhibiting improved electronic properties relative to conventional nanotubes-based electronic systems.

Medium scale carbon nanotube thin film integrated circuits on flexible plastic substrates

The invention provides methods and devices for fabricating printable semiconductor elements and assembling printable semiconductor elements onto substrate surfaces. Methods, devices and device components of the present invention are capable of generating a wide range of flexible electronic and optoelectronic devices and arrays of devices on substrates comprising polymeric materials. The present invention also provides stretchable semiconductor structures and stretchable electronic devices capable of good performance in stretched configurations.

Methods and devices for fabricating and assembling printable semiconductor elements

This paper presents the thermal sensitivity variation trend of Ni/4H-nSiC (0001) Schottky diode based temperature sensor, equipped with floating metal guard ring and oxide field plate as edge terminations in low current regime, i.e., ranging from 1 nA to 5 pA. Various measurements were carried out at temperatures ranging from 233 K to 473 K in steps of 20 K. An imperative outcome of the present study, which is in contrast with the theory, is that there exists an anomaly in the device thermal sensitivity behaviour after a range of current. The thermal sensitivity of the fabricated device, calculated from the slope of forward voltage versus temperature plot, was found to be varied from 3.11 mV/K at 1 nA to 3.32 mV/K at 5 pA with standard error of ±0.03 mV/K. A detailed analysis of I-V-T characteristics by taking into account all the possibilities for variation in the barrier height and the ideality factor with temperature emphasizes that there exist barrier height inhomogeneities at the metal–semiconductor interface in the fabricated device. These observations indicate that anomaly in the device thermal sensitivity was due to the barrier height inhomogeneities present in the device.

Barrier height inhomogeneities induced anomaly in thermal sensitivity of Ni/4H-SiC Schottky diode temperature sensor

A microcontroller-based digital hygrometer system using a low-cost moisture sensor in the range of 3.7–100 ppm has been developed. The sensor is of capacitive type and consists of nanoporous thin film of alumina $(\gamma - \hbox{Al}_{2}\hbox{O}_{3})$ dip coated in between two parallel gold electrodes onto an alumina substrate. The behavior of the sensor has been modeled with an object to develop a signal processing circuit to convert capacitance change into frequency. The detection electronics circuit is based on a relaxation oscillator whose output is suitable for interfacing with a digital device. The sensor has been characterized with the circuit and then output frequency is calibrated in terms of ppm. The accuracy of the digital hygrometer when compared with the commercial dew point meter is found to be $\pm\!$ 1 PPM.

A Digital Hygrometer for Trace Moisture Measurement

MEMS pressure sensor fabrication introduce a number of challenges to handle the processed wafers in batch fabrication after bulk-micromachining In this paper, fabrication process sequence was optimized where photolithography steps were reduced after the diaphragm formation Reactive ion etching (RIE) and low pressure chemical vapor deposition (LPCVD) has been replaced during the modified process Polysilicon thin film based on electron beam physical vapor deposition (EBPVD) was optimized for required sheet resistivity MEMS pressure sensor rooted on EBPVD polysilicon piezoresistive sensing element was successfully fabricated and characterized in terms of sensitivity, linearity and repeatability

Fabrication of electron beam physical vapor deposited polysilicon piezoresistive MEMS pressure sensor

ZnO thick Stress relaxed films were deposited by reactive magnetron sputtering on 2”-wafer of SiO2/Si at room temperature. The residual stress of ZnO films was measured by measuring the curvature of wafer using laser scanning method and found in the range of 0.18 x 109 to 11.28 x 109 dyne/cm2 with compressive in nature. Sputter pressure changes the deposition rates, which strongly affects the residual stress and surface morphologies of ZnO films. The crystalline wurtzite structure of ZnO films were confirmed by X-ray diffraction and a shift in (0002) diffraction peak of ZnO towards lower 2θ angle was observed with increasing the compressive stress in the films. The band gap of ZnO films shows a red shift from ∼3.275 eV to ∼3.23 eV as compressive stress is increased, unlike the stress for III-nitride materials. A relationship between stress and band gap of ZnO was derived and proposed. The stress-free growth of piezoelectric films is very important for functional devices applications.

Growth of residual stress-free ZnO films on SiO2/Si substrate at room temperature for MEMS devices

This report is on the diameter dependent thermal sensitivity variation trend of Ni/4H-nSiC Schottky barrier diode (SBD) temperature sensors. Scaled SBDs of 2, 1.6, and 1.2 mm in diameter were fabricated using standard photolithography process comprising a field plate and a guard ring as edge terminations on the same epitaxial wafer. Taking into consideration the heat loss and power consumption, the thermal sensitivities of the fabricated SBDs were measured in the current range from 1 μA to 50 pA. The temperature was varied from 273 to 473 K in step of 25 K. An authoritative consequence of the present study is the observed increase in thermal sensitivity with the diameter of the fabricated SBDs. An exhaustive investigation confirms that in all diodes, there exist nanosized patches, which assumed to have different barrier heights and hence ascertained to be the main cause of anomalies in thermal sensitivity variation with diode size. Taking into account the effective area of these patches, theoretically fit...

Jamil Akhtar

Papers

Barrier height inhomogeneities induced anomaly in thermal sensitivity of Ni/4H-SiC Schottky diode temperature sensor

A Digital Hygrometer for Trace Moisture Measurement

Fabrication of electron beam physical vapor deposited polysilicon piezoresistive MEMS pressure sensor

Growth of residual stress-free ZnO films on SiO2/Si substrate at room temperature for MEMS devices

Diameter dependent thermal sensitivity variation trend in Ni/4H-SiC Schottky diode temperature sensors