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Jan Hendrik den Besten

Bio: Jan Hendrik den Besten is an academic researcher from Eindhoven University of Technology. The author has contributed to research in topics: Optical switch & Mach–Zehnder interferometer. The author has an hindex of 2, co-authored 6 publications receiving 591 citations.

Papers
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Journal ArticleDOI
11 Nov 2004-Nature
TL;DR: Simulations show that the ring lasers with extremely small size and low operating power presented here have the potential for much smaller dimensions and switching times, and large numbers of such memory elements can be densely integrated and interconnected on a photonic integrated circuit.
Abstract: The increasing speed of fibre-optic-based telecommunications has focused attention on high-speed optical processing of digital information1. Complex optical processing requires a high-density, high-speed, low-power optical memory that can be integrated with planar semiconductor technology for buffering of decisions and telecommunication data2. Recently, ring lasers with extremely small size and low operating power have been made3,4,5,6,7, and we demonstrate here a memory element constructed by interconnecting these microscopic lasers. Our device occupies an area of 18 × 40 µm2 on an InP/InGaAsP photonic integrated circuit, and switches within 20 ps with 5.5 fJ optical switching energy. Simulations show that the element has the potential for much smaller dimensions and switching times. Large numbers of such memory elements can be densely integrated and interconnected on a photonic integrated circuit: fast digital optical information processing systems employing large-scale integration should now be viable.

621 citations

Proceedings ArticleDOI
21 Oct 2004
TL;DR: In this article, a simulation strategy for the accurate prediction of the functionality of an InP-InGaAsP p-i-n diode embedded in a rib waveguide and a Mach-Zehnder interferometer is presented.
Abstract: In this paper we present a simulation strategy for the accurate prediction of the functionality of an InP based opto-electronic modulator. The device is composed by an InP-InGaAsP p-i-n diode embedded in a rib waveguide and a Mach-Zehnder interferometer. Finite Element Analysis for both semiconductor and optical equations solution is exploited. We present numerical results indicating that with a 2 mm-long device a reverse bias of 11 V is needed for a 180° phase shift.

5 citations

Journal ArticleDOI
01 Jun 2013
TL;DR: In this paper, a breite Palette kommerzieller Anwendungen ermoglicht, etwa optische Chipverbindungen, Sensoruberwachung oder Mikrowellenfilter and Strahlformer, is presented.
Abstract: Die Siliziumphotonik hat sich in den letzten Jahren zu einem dynamischen Umfeld fur Siliziumfertigungsbetriebe und Designhauser entwickelt. Dies hat neben den traditionellen Telekommunikationsaktivitaten eine breite Palette kommerzieller Anwendungen ermoglicht, etwa optische Chipverbindungen, Sensoruberwachung oder Mikrowellenfilter und Strahlformer. Grundelemente wie Array-Wellenleiter (arrayed-waveguide grating, AWG), Mach-Zehnder-Interferometer (MZI), Multimode-Interferenzkoppler (MMI) und Ringresonatoren (RR) sind bereits zu zuverlassigen und anpassbaren Standardelementen fur komplexere, integrierte optische Systeme geworden.

2 citations

Proceedings ArticleDOI
18 Aug 2004
TL;DR: In this article, a simulation strategy for the accurate prediction of the functionality of an InP/InGaAsP p-i-n diode embedded in a rib waveguide and a Mach-Zehnder interferometer is presented.
Abstract: In this paper we present a simulation strategy for the accurate prediction of the functionality of an InP based optoelectronic modulator. The device is composed of an InP/InGaAsP p-i-n diode embedded in a rib waveguide and a Mach-Zehnder interferometer. Finite Element Analysis for both semiconductor and optical equations solution is exploited. The presented numerical results, indicating a reverse bias voltage of 5.5 V for a 180° phase shift in a 2 mm-long device, are confirmed by measured data. Transient simulation predicts that this structure is suitable for 40 Gbit/s operation.

1 citations

Proceedings ArticleDOI
01 Oct 2006
TL;DR: All-optical packet switching at high bit-rates is discussed and monolithically integrated devices to achieve high-bit-rate operation are focused on.
Abstract: All-optical packet switching at high bit-rates is discussed. We focus on the utilizing monolithically integrated devices to achieve high-bit-rate operation.

Cited by
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Journal ArticleDOI
TL;DR: In this paper, the authors review the most recent progress in this field, including low-threshold silicon Raman lasers with racetrack ring resonator cavities, the first germanium-on-silicon lasers operating at room temperature, and hybrid silicon microring and microdisk lasers.
Abstract: Silicon lasers have long been a goal for semiconductor scientists, and a number of important breakthroughs in the past decade have focused attention on silicon as a photonic platform. Here we review the most recent progress in this field, including low-threshold silicon Raman lasers with racetrack ring resonator cavities, the first germanium-on-silicon lasers operating at room temperature, and hybrid silicon microring and microdisk lasers. The fundamentals of carrier transition physics in crystalline silicon are discussed briefly. The basics of several important approaches for creating lasers on silicon are explained, and the challenges and opportunities associated with these approaches are discussed. Silicon lasers have long been a goal for semiconductor scientists. This Progress Article reviews the most recent developments in this field, including silicon Raman lasers, the first germanium-on-silicon lasers operating at room temperature, and hybrid silicon microring and microdisk lasers. Challenges and opportunities for the present approaches are also discussed.

1,045 citations

Journal ArticleDOI
TL;DR: In this paper, the first laser operation in an electrically pumped metallic-coated nanocavity formed by a semiconductor heterostructure encapsulated in a thin gold film was reported.
Abstract: Metallic cavities can confine light to volumes with dimensions considerably smaller than the wavelength of light. It is commonly believed, however, that the high losses in metals are prohibitive for laser operation in small metallic cavities. Here we report for the first time laser operation in an electrically pumped metallic-coated nanocavity formed by a semiconductor heterostructure encapsulated in a thin gold film. The demonstrated lasers show a low threshold current and their dimensions are smaller than the smallest electrically pumped lasers reported so far. With dimensions comparable to state-of-the-art electronic transistors and operating at low power and high speed, they are a strong contender as basic elements in digital photonic very large-scale integration. Furthermore we demonstrate that metallic-coated nanocavities with modal volumes smaller than dielectric cavities can have moderate quality factors.

824 citations

Journal ArticleDOI
TL;DR: Researchers use phase-change materials to demonstrate an integrated optical memory with 13.4 pJ switching energy with real-time switching energy.
Abstract: Researchers use phase-change materials to demonstrate an integrated optical memory with 13.4 pJ switching energy.

806 citations

Journal ArticleDOI
TL;DR: In this article, the authors review photonic applications of dielectric whispering-gallery mode (WGM) resonators and trace the growth of the technology from experiments with levitating droplets of aerosols to ultrahigh-Q solid state crystalline and integrated on-chip microresonators.
Abstract: We review photonic applications of dielectric whispering-gallery mode (WGM) resonators-tracing the growth of the technology from experiments with levitating droplets of aerosols to ultrahigh-Q solid state crystalline and integrated on-chip microresonators.

571 citations

Journal ArticleDOI
TL;DR: In this article, the first polarization-transparent add-drop filter from polarization-sensitive microring resonators is presented, which shows almost complete elimination of polarization sensitivity over the 60nm bandwidth measured, while maintaining outstanding filter performance.
Abstract: Microphotonic structures that strongly confine light, such as photonic crystals and micron-sized resonators, have unique characteristics that could radically advance technology1,2,3,4,5,6. However, such devices cannot be used in most applications because of their inherent polarization sensitivity; they respond differently to light polarized along different axes7,8,9. To take advantage of the distinctive properties of these structures, a general, integrated, broadband solution to their polarization sensitivity is needed. Here, we show the first demonstration of such a solution. It enables arbitrary, polarization-sensitive, strong-confinement (SC) microphotonic devices to be rendered insensitive (transparent) to the input polarization at all wavelengths of operation. To test our approach, we create the first polarization-transparent add–drop filter from polarization-sensitive microring resonators. It shows almost complete elimination of polarization sensitivity over the 60-nm bandwidth measured, while maintaining outstanding filter performance. This development is a milestone for SC microphotonics, allowing the applications of photonic-crystal and microring devices to several areas, including communications, spectroscopy and remote sensing.

541 citations