Janet Tate

Bio: Janet Tate is an academic researcher from Oregon State University. The author has contributed to research in topics: Thin film & Amorphous solid. The author has an hindex of 29, co-authored 83 publications receiving 3324 citations. Previous affiliations of Janet Tate include Technische Universität München & Center for Advanced Materials.

Band-structure, optical properties, and defect physics of the photovoltaic semiconductor SnS

Abstract: SnS is a potential earth-abundant photovoltaic (PV) material. Employing both theory and experiment to assess the PV relevant properties of SnS, we clarify on whether SnS has an indirect or direct band gap and what is the minority carrier effective mass as a function of the film orientation. SnS has a 1.07 eV indirect band gap with an effective absorption onset located 0.4 eV higher. The effective mass of minority carrier ranges from 0.5 m0 perpendicular to the van der Waals layers to 0.2 m0 into the van der Waals layers. The positive characteristics of SnS feature a desirable p-type carrier concentration due to the easy formation of acceptor-like intrinsic Sn vacancy defects. Potentially detrimental deep levels due to SnS antisite or S vacancy defects can be suppressed by suitable adjustment of the growth condition towards S-rich.

p-type conductivity in CuCr1−xMgxO2 films and powders

Abstract: CuCr1−xMgxO2, a wide band gap semiconductor with the delafossite structure, has been synthesized in bulk and thin-film form. Bulk undoped CuCrO2 is almost black and has moderate conductivity with p-type carriers. Upon doping with 5% Mg, the conductivity increases by a factor of 1000. In films, the best p-type conductivity is 220 S cm−1 in CuCr0.95Mg0.05O2, a factor of 7 higher than previously reported for Cu-based p-type delafossites. Undoped films have a conductivity of order 1 S cm−1. Films are usually polycrystalline on amorphous substrates, but undoped films can be c-axis oriented if deposited at or above 650 °C. Optical and ultraviolet transmission data indicate a direct band gap of 3.1 eV.

Transparent p-type conducting CuScO2+x films

Abstract: Transparent films of CuScO2+x have been prepared which show p-type electrical conductivity. The temperature dependence of the conductivity indicates semiconducting behavior with an apparent room temperature activation energy of 0.11 eV. The highest room temperature conductivity observed was 30 S cm−1. Films 110 nm thick show 40% transparency in most of the visible spectrum and become much more transparent in the infrared spectrum. The p-type behavior was confirmed by the Seebeck effect.

A map of the inorganic ternary metal nitrides

Abstract: Exploratory synthesis in new chemical spaces is the essence of solid-state chemistry. However, uncharted chemical spaces can be difficult to navigate, especially when materials synthesis is challenging. Nitrides represent one such space, where stringent synthesis constraints have limited the exploration of this important class of functional materials. Here, we employ a suite of computational materials discovery and informatics tools to construct a large stability map of the inorganic ternary metal nitrides. Our map clusters the ternary nitrides into chemical families with distinct stability and metastability, and highlights hundreds of promising new ternary nitride spaces for experimental investigation-from which we experimentally realized seven new Zn- and Mg-based ternary nitrides. By extracting the mixed metallicity, ionicity and covalency of solid-state bonding from the density functional theory (DFT)-computed electron density, we reveal the complex interplay between chemistry, composition and electronic structure in governing large-scale stability trends in ternary nitride materials.

Transparent conducting oxide semiconductors for transparent electrodes

Abstract: The present status and prospects for further development of polycrystalline or amorphous transparent conducting oxide (TCO) semiconductors used for practical thin-film transparent electrode applications are presented in this paper. The important TCO semiconductors are impurity-doped ZnO, In2O3 and SnO2 as well as multicomponent oxides consisting of combinations of ZnO, In2O3 and SnO2, including some ternary compounds existing in their systems. Development of these and other TCO semiconductors is important because the expanding need for transparent electrodes for optoelectronic device applications is jeopardizing the availability of indium-tin-oxide (ITO), whose main constituent, indium, is a very expensive and scarce material. Al- and Ga-doped ZnO (AZO and GZO) semiconductors are promising as alternatives to ITO for thin-film transparent electrode applications. In particular, AZO thin films, with a low resistivity of the order of 10−5 Ω cm and source materials that are inexpensive and non-toxic, are the best candidates. However, further development of the deposition techniques, such as magnetron sputtering or vacuum arc plasma evaporation, as well as of the targets is required to enable the preparation of AZO and GZO films on large area substrates with a high deposition rate.

Nonlinear forecasting as a way of distinguishing chaos from measurement error in time series

Abstract: An approach is presented for making short-term predictions about the trajectories of chaotic dynamical systems. The method is applied to data on measles, chickenpox, and marine phytoplankton populations, to show how apparent noise associated with deterministic chaos can be distinguished from sampling error and other sources of externally induced environmental noise.

Light-emitting device

Abstract: An object of the present invention is to provide a new light-emitting device with the use of an amorphous oxide. The light-emitting device has a light-emitting layer existing between first and second electrodes and a field effect transistor, of which the active layer is an amorphous.

Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes

Abstract: Methods and displays utilize row and column drivers with ZnO channels that control pixel transistors with ZnO channels, which in turn address OLEDs of an array to produce images of a display screen. A display backplane including the ZnO row and column drivers and the OLEDs may be constructed by utilizing aperture masking or a combination of photolithography and aperture masking. Monolithic integration of the ZnO row and column drivers together with the ZnO pixel transistors is thereby achieved.